Results 61 to 70 of about 3,667,724 (282)

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Synergistic effect of TiN ceramic particle and grain refinement in enhancing the higher performance Ti–V–Al based shape memory alloy

Journal of Materials Research and Technology
In the present study, in-situ TiN ceramic particles were introduced into Ti–V–Al based shape memory alloys to optimize mechanical properties and friction resistance. The results revealed that increasing the TiN content resulted in the transition from α''
Wei Liu, Yunfei Wang, Xinjian Cao, Xiao Liu, Bin Sun, Haizhen Wang, Xiaoyang Yi, Xianglong Meng, Zhiyong Gao   +8 more
doaj   +1 more source

Origami-inspired thin-film shape memory alloy devices

Scientific Reports, 2021
We describe the design and fabrication of miniaturized origami structures based on thin-film shape memory alloys. These devices are attractive for medical implants, as they overcome the opposing requirements of crimping the implant for insertion into an ...
Prasanth Velvaluri, Arun Soor, Paul Plucinsky, Rodrigo Lima de Miranda, Richard D. James, Eckhard Quandt   +5 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Investigation and Composition Characterization of a “NiTi-like” Alloy Combining High Temperature Shape Memory and High Entropy [PDF]

, 2020
New high temperature shape memory alloyswith five or more elements are under development and present attractive performances for several functional applications.
PELTIER, Laurent, BERVEILLER, Sophie, LAHEURTE, Pascal, MERAGHNI, Fodil, PATOOR, Etienne, LOHMULLER, Paul   +5 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Some New Concepts of Shape Memory Effect of Polymers [PDF]

, 2014
In this study some new concepts regarding certain aspects related to shape memory polymers are presented. A blend of polylactic acid (PLA) (80%) and polybutylene succinate (PBS) (20%) was prepared first by extrusion, then by injection molding to obtain ...
FARZANEH, Sedigheh, SHIRINBAYAN, Mohammadali, Joseph Fitoussi, Sedigheh Farzaneh, EBRAHIMI, Kambiz, TCHARKHTCHI, Abbas, Sofiane Abdallah-Elhirtsi, Abbas Tcharkhtchi, Kambiz Ebrahimi, FITOUSSI, Joseph, Mohammadali Shirinbayan, ABDALLAH-ELHIRTSI, Sofiane   +11 more
core   +1 more source

Shape memory effect and compositional dependence of Zr-Cu binary and Zr-Cu-Al ternary alloys

Mechanical Engineering Journal, 2017
The intermetallic compound ZrCu experiences a transformation from a parent phase into a martensitic phase with rapid cooling. ZrCu possesses considerable promise as a high-temperature shape memory alloy.
Hitoo TOKUNAGA, Hideki YOSHIOKA
doaj   +1 more source