Results 51 to 60 of about 19,980 (256)

Inverse Identification of Energy‐Dependent Laser Absorptivity in NiTi Laser Powder‐Bed Fusion via Calibrated Melt Pool Simulation

open access: yesAdvanced Engineering Materials, EarlyView.
A combined experimental–computational framework identifies energy‐dependent laser absorptivity for NiTi in laser powder‐bed fusion, applicable to conduction and transition modes. Single‐track experiments and thermofluid smoothed particle hydrodynamics simulations are coupled through inverse analysis of melt pool geometry.
Mohamadreza Afrasiabi   +3 more
wiley   +1 more source

Reconfigurable Logic‐in‐Memory Operations Enabled by Triple‐Gated Feedback Field‐Effect Transistors for Area‐Efficient Computing

open access: yesAdvanced Engineering Materials, EarlyView.
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol   +5 more
wiley   +1 more source

Depth dependence of nanohardness in a CuAlNi single crystal shape memory alloy [PDF]

open access: yes, 2002
Instrumented nanoindentation was employed to study the depth dependence of nanohardness in a CuAlNi single crystal shape memory alloy that exhibits shape memory effect (SME).
Sun QP(孙庆平)   +3 more
core  

Investigations of generic self disassembly using shape memory alloys [PDF]

open access: yes, 1998
Industrial recycling is a practice of growing importance while impending `Take Back' European legislation and economic pressures are increasing. Landfill sites are becoming exhausted and the industry could benefit from a novel approach to recycling pre ...
J.D. Chiodo   +7 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Fusionless scoliosis correction using shape memory alloy staples [PDF]

open access: yes, 2010
Severe spinal deformity in young children is a formidable challenge for optimal treatment. Standard interventions for adolescents, such as spinal deformity correction and fusion, may not be appropriate for young patients with considerable growth ...
Askin, Geoffrey N.   +4 more
core  

Application of shape memory alloys in facial nerve paralysis [PDF]

open access: yes, 2009
Background: The Facial Nerve can be damaged at a peripheral level by a stroke or, for example by trauma or infection within the face or the ear. In these cases the facial muscles are paralysed with little or no chance of spontaneous recovery.
Vloeberghs, M, Breedon, P
core   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

Bending models for superelastic shape memory alloy laminated composite cantilever beams with elastic core layer [PDF]

open access: yes, 2018
This paper develops a novel and simple analytical model to investigate the bending response of superelastic shape memory alloy (SMA) laminated composite cantilever beam during a complete loading/unloading cycle based on ZM's three-dimensional (3D ...
R. Umer   +5 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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