Results 91 to 100 of about 17,716 (302)

Active disassembly applied to end of life vehicles [PDF]

open access: yes, 2003
This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.Active Disassembly is technology that has been developed to allow assemblies to readily separate for recycling when they are exposed to certain triggering ...
Jones, Nicholas
core  

Laser-Directed Energy Deposition of Fe-Mn-Si-Based Shape Memory Alloy: Microstructure, Mechanical Properties, and Shape Memory Properties

open access: yes, 2023
Fe-Mn-Si shape memory alloys (SMAs) have gained significant attention due to their unique characteristics. However, there remains a gap in the literature regarding the fabrication of these alloys using laser-directed energy deposition (LDED).
Bing Liu   +4 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Elastocaloric Effect in Shape-Memory Alloys [PDF]

open access: yes
It is widely acknowledged that shape-memory alloys have an enormous potential for future developments of an environmentally friendly new solid-state refrigeration technology, thanks to their excellent elastocaloric properties. In the present review paper,
Mañosa, Lluís, Planes Vila, Antoni
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Cast and rolling textures of NiMnGa alloys

open access: yes, 2022
S.30-35The texture of two polycrystalline NiMnGa magnetic shape memory alloys fabricated by directional solidification and hot rolling has been measured with high-energy synchrotron radiation and neutron diffraction.
Brokmeier, H.G.   +6 more
core  

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo   +10 more
wiley   +1 more source

Thermally driven phase transformation in shape-memory alloys [PDF]

open access: yes, 2007
This paper analyzes a model for phase transformation in shape-memory alloys induced by temperature changes and by mechanical loading. We assume that the temperature is prescribed and formulate the problem within the framework of the energetic theory of ...
Petrov, Adrien, Mielke, Alexander
core   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

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