Results 141 to 150 of about 226,502 (305)
Incorporating Modern Fault Ride-Through Standards into the Short-Circuit Calculation of Distribution Networks. [PDF]
Sensors (Basel), 2023 Pompodakis EE +2 more
europepmc +1 more source
Advanced Functional Materials, EarlyView.A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon +4 more
wiley +1 more source
Study of the Protection and Energy Transmission Modes of One Phase Short Circuit to Ground in Inverters. [PDF]
Sensors (Basel), 2023 Chen D +5 more
europepmc +1 more source
Time‐Resolved Magnetization Switching Dynamics Driven by Orbital Torques
Advanced Functional Materials, EarlyView.Du et al. reveal nanosecond magnetization switching driven by orbital currents using time‐resolved Hall detection. The measurements separate domain nucleation from domain wall propagation and show that Joule heating strongly assists switching by lowering energy barriers.
Ao Du +4 more
wiley +1 more source
Short circuit current of synchronous generator
, 2014 The thesis deals with the problematics of short-circuit current of synchronous machine. The first section focuses on the theoretical process of short-circuit current of synchronous machine and describes how this transient process changes throughout it's ...
Šebesta, Ondřej
core
A Novel Super-Junction DT-MOS with Floating p Regions to Improve Short-Circuit Ruggedness. [PDF]
Micromachines (Basel), 2023 Yin S, Cao W, Hu X, Ge X, Liu D.
europepmc +1 more source
Advanced Functional Materials, EarlyView.Bandgap‐engineered AlGaAs/GaAs heterostructures exhibit wavelength‐selective dual‐polarity photoelectrochemistry, switching from photocathodic to photoanodic response depending on excitation wavelength. The polarity transition is governed by band‐selective absorption, built‐in electric‐field‐driven carrier transport, and interfacial charge‐transfer ...
Yukai Mao +9 more
wiley +1 more source
CALCULATION OF SHORT CIRCUIT VALUE
, 2011 Diplomsko delo opisuje postopek izračuna kratkostičnih veličin kratkega stika po modelu omrežja (IEEE5) s pomočjo vozliščne admitančne matrike. Predstavljen je postopek izračuna vozliščne admitančne matrike in kratkostičnih tokov.
Omerzu, Sebastijan
core
On Model-Based Transfer Learning Method for the Detection of Inter-Turn Short Circuit Faults in PMSM. [PDF]
Sensors (Basel), 2023 Wang M, Song Q, Lai W.
europepmc +1 more source