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Formation of buried a-Si/Al/Si, a-Si/Sb/Si and a-Si/B/Si interfaces and their electrical properties
Journal of Crystal Growth, 1995Abstract Si:Al, Si:Sb and Si:B surface phases capped by amorphous Si layers were grown by MBE. The formation of the buried interfaces was studied by low-energy electron diffraction and Auger electron spectroscopy which revealed that, except for the stable Si(111)√3 × √3 -B, the majority of the surface phases suffer either from in-plane redistribution
A.V. Zotov +5 more
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Modeling of a-Si/poly-Si and a-Si/poly-Si/poly-Si stacked solar cells
Solar Energy Materials and Solar Cells, 2003Abstract A computer model for the poly-Si thin film-related solar cells is established, with which the solar cells with the structure of single junction poly-Si cell, a-Si/poly-Si tandem cell and a-Si/poly-Si/poly-Si triple cell are simulated. The results indicate that the practical structure for poly-Si-related solar cell is a-Si/poly-Si/poly-Si ...
X.H. Geng +6 more
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