Results 121 to 130 of about 3,250,292 (215)

The effect of precursor composition and sintering additives on the formation of ß-sialon from Al, Si and Al2O3 powders

open access: yes, 2011
A study was performed to investigate the effect of increasing the Al or Al2O3 precursor content, above the stoichiometric amount, on the formation of β-sialon by pressureless sintering of Al, Si and Al2O3 powders in flowing nitrogen gas.
Ewing, Helen, Yang, S.
core   +1 more source

SI VIS vs SIS

open access: yes, 2022
Sis a été analysé par E. Dickey comme une particule enclitique focalisante, ayant perdu sa fonction de politesse. Nous revenons d'abord sur cette analyse ; nous reprenons ensuite la concurrence entre sīs et si uīs à la lumière principalement de Plaute.
openaire   +1 more source

Role of Hydrogen in Polycrystalline Si by Excimer Laser Annealing [PDF]

open access: yes, 2005
The role of hydrogen in the Si film during excimer laser annealing (ELA) has been successfully studied by using a novel sample structure, which is stacked by a-Si film and SiN film.
MATSUMURA, Hideki   +7 more
core  

The Systems Story: presented by SI Handling Systems

open access: yes, 1967
SI systems solution for ...
McEwan's Limited (c.1850-1982)   +1 more
core  

Strain-relaxed, high Ge content, SiGe layers grown on Si (100) substrate by reduced pressure - chemical vapour deposition (RP-CVD) [PDF]

open access: yes
A different approach was taken to relieve strain from a high Germanium (Ge) content, Silicon-Germanium (SiGe) layers on a Silicon (Si) (100) substrate by growing a thin Ge under-layer between substrate and layer.
Alabdulali, Haitham
core  

Alkali metals extraction reactions with the silicides Li15Si4 and Li3NaSi6: Amorphous Si versus allo -Si

open access: yes, 2014
The silicides Li15Si4 and Li3NaSi6 were subjected to chemical extraction of the alkali metal component by liquid ammonia and ethanol, respectively, which after washing yielded black powders of amorphous silicon. The investigated reactions are interesting
Lorenz Kienle (1420606)   +9 more
core   +1 more source

The origin of intrinsic stress and its relaxation for SiOF thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

open access: yes, 2000
SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) on Si(100) substrates as a function of both the SiF4/O-2 flow ratio, as well as the Ar flow rate.
Kim, SP, Choi, Si-Kyung
core  

Ingegneria si racconta

open access: yes, 2019
La facoltà di Ingegneria si racconta. Una giornata di presentazione della facoltà agli studenti Il seminario è stato ideato e promosso da Claudia Mattogno e si rivolge agli studenti del corso di Ingegneria Edile Architettura che per la prima volta ...
Mattogno, Claudia
core  

A medium energy ion scattering analysis of the Si-SiO2 interface formed by ion beam oxidation of silicon

open access: yes, 1997
The Si-SiO2 interface formed by 3 keV O-2(+) ion bombardment on silicon at room temperature and 600 degrees C was studied by in situ medium energy ion scattering spectroscopy (MEIS).
Kim, HK   +5 more
core  

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