Results 121 to 130 of about 1,011,905 (146)

Si Binding and Nucleation on Si(100)

Physical Review Letters, 1995
Si adatoms deposited on Si(100)-( $2\ifmmode\times\else\texttimes\fi{}1$) below $200{}^{\ensuremath{\circ}}$C assume metastable binding configurations, each distinct from the dimer string topology ordinarily observed following deposition at higher temperatures.
openaire   +2 more sources

Chemical bonding at the Si–metal interface: Si–Ni and Si–Cr

Journal of Vacuum Science and Technology, 1982
Chemical bonding at the interface of a near-noble-metal (Ni) and a transition metal (Cr) with Si is examined through synchrotron radiation photoelectron spectroscopy studies of in situ formed interfaces, of cleaved bulk silicides, and of disordered surfaces prepared by sputter etching of the silicides.
A. FRANCIOSI, J. H. WEAVER, D. G. O'NEILL, Y. CHABAL, J. E. ROWE, J. E. POATE, BISI, Olmes, CALANDRA BUONAURA, Carlo   +7 more
openaire   +1 more source

?????????????????????? ???????????????????????? ?????????????????????????????????????????? ???????????????????? ???????????? ?? ???SI???O???SI??? -??????????????????????????

2023
?????????????? ????-?????????????????????????? ?? ???????????????????????????? ????????-?????????????????????????? ?????????????? ?????????????????????? ???????????????????????? ?????????????????????????????????????????? ???????????????????????????????????????????????? (??????????) ??????????????????? ??????????????. ????????????????, ?????? ?? ????????
openaire   +1 more source

???????????????? ?????????????????? ???????????????????????? ?????????????????????????? ???????????? Si/Mg???Si ?????? ?????????????????????? ??????????????????????

2017
???????????????? ?????????????????????????? ???????????????????????????? ?? ???????????????????????????? ?????????????????????? ?????????????????????? ???????????????????? ???????????? ?????????????????????? ?????????????????? ?????????????????????????? ???????????????????????????? ?????????????? (??????) Si/Mg???Si ?? ???????????????? ?????????????????
openaire   +1 more source

Misfit, Strain, and Dislocations in Epitaxial Structures: Si/Si, Ge/Si, Si/Al2O3

1978
The growth of an epitaxial semiconductor layer on an insulating substrate (or vice versa) will in general lead to the development of strain in the composite structure because of lattice mismatch between the two substances or because of differential thermal contraction between the two layers.
openaire   +1 more source

Si loin, si proches

2015
Cet article ­s'intéresse à la traduction à la Renaissance. Il montre que ­l'oscillation du traduire entre proximité et distanciation ne se résout pas toujours en un dialogue, et que bien souvent la domestication ­l'emporte sur ­l'exotisme.
openaire   +1 more source

Castiglione d’Orcia (SI), Montalcino (SI), Murlo (SI)

2005
Il contributo presenta lo stato della ricerca topografica nelle amministrazioni comunali di Murlo, Montalcino e Castiglione d'Orcia presentato risultati quantitativi e una sintesi storiografica.
openaire   +1 more source

Die Bestimmung von Si-CH3-, Si-CH2-Si-, Si-CCl3-, Si-CHCl2-, Si-CH2Cl- und Si-CCl2-Si- Gruppen in siliciumorganischen Verbindungen

Fresenius' Zeitschrift für analytische Chemie, 1960
openaire   +1 more source

SI Units

BMJ, 1975
openaire   +2 more sources

Growth Kinetics of Si and SiGe on Si [110] and Si

2006 International SiGe Technology and Device Meeting, 2006
J.M. Hartmann, M. Burdin, G. Rolland, T. Billon   +3 more
openaire   +1 more source