Results 1 to 10 of about 122,150 (194)

Project of auroral X-ray image observations using two-dimentional array of Si(Li) semiconductor detectors

Antarctic Record, 1985
To observe auroral X-ray images, the horizontal two-dimensional array of the Lithium-drifted Silicon Si(Li) detectors has been developed. The auroral X-ray imager has 5×5 pixels.
Atsushi Nakamoto, Hiroyuki Murakami, Kiyoaki Okudaira, Yo Hirasima, Takamasa Yamagami, Shigeo Ohta, Michiyoshi Namiki, Jun Nishimura, Masahiro Kodama, Hiroshi Miyaoka, Natsuo Sato, Ryoichi Fujii   +11 more
doaj   +2 more sources

Advances in Silicon-Based UV Light Detection [PDF]

Micromachines
Silicon (Si), the cornerstone semiconductor in the micro-electronics industry, can provide a cost-efficient platform with mature technologies for photodetection in visible and near-infrared regions.
Arif Kamal, Seongin Hong, Heongkyu Ju
doaj   +2 more sources

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Sensors, 2023
While silicon has been a steadfast semiconductor material for the past 50 years, it is now facing competition from other materials, especially for detector design. In that respect, due to its high resistance to radiation damage, silicon carbide is one of
Carmen Altana, Lucia Calcagno, Caterina Ciampi, Francesco La Via, Gaetano Lanzalone, Annamaria Muoio, Gabriele Pasquali, Domenico Pellegrino, Sebastiana Puglia, Giuseppe Rapisarda, Salvatore Tudisco   +10 more
doaj   +2 more sources

Development of Si-CMOS hybrid detectors towards electron tracking based Compton imaging in semiconductor detectors [PDF]

Nuclear Instruments and Methods in Physics Research Section A : Accelerators, Spectrometers, Detectors and Associated Equipment, 2017
Hiroki Yoneda, Shinya Saito, Shin Watanabe, Hirokazu Ikeda, Tadayuki Takahashi   +4 more
openalex   +3 more sources

CMOS‐Compatible Short‐Wave Infrared Linear Arrays of Ge‐on‐Si Avalanche Photodiodes

Advanced Photonics Research
Germanium‐containing short‐wave infrared (SWIR) avalanche photodiode (APD) arrays on silicon platforms have the potential for monolithic integration into complementary metal‐oxide‐semiconductor (CMOS) integrated circuits, making them mass‐manufacturable,
Mrudul Modak, Muhammad M. A. Mirza, Xin Yi, Qingyu Tian, Lisa Saalbach, Fiona Fleming, Jaroslaw Kirdoda, Derek C. S. Dumas, Xiao Jin, Charlie Smith, Levi Tegg, Sima Aminorroaya Yamini, John P. R. David, Douglas J. Paul, Ross W. Millar, Gerald S. Buller   +15 more
doaj   +2 more sources

Development of nuclear radiation monitors for radiation early warning systems [PDF]

Nuclear Technology and Radiation Protection, 2022
The results of the development of modern precision monitors of alpha, beta and gamma ray radiation for setting up early warning systems for radioactive contamination in the atmosphere and rapid assessment of emerging threats, are presented ...
Gostilo Vladimirs V., Vlasenko Andrey N., Litvinsky Vasily S., Krainukovs Igors A.   +3 more
doaj   +1 more source

Study of electrical properties and detection mechanism of a practical novel 3D-Spherical Electrode Detector

Frontiers in Materials, 2023
Among the 3D electrode Si detectors for high energy particle and X-ray detection, the traditional 3D-Trench electrode Si detector is a semiconductor detector that is widely used and discussed.
Zewen Tan, Zewen Tan, Zewen Tan, Zheng Li, Zheng Li, Zheng Li, Xinqing Li, Xinqing Li, Xinyi Cai, Xinyi Cai, Xinyi Cai, Manwen Liu, Hongfei Wang   +12 more
doaj   +1 more source

Radiation dosimetry in medicine using II-VI semiconductors

Journal of Radiation Research and Applied Sciences, 2022
For several decades, radiation detection has been implemented using mainly silicon (Si) and germanium (Ge). However, group II-VI compound semiconductors such as cadmium telluride (CdTe), cadmium sulfide (CdS), cadmium selenide (CdSe), zinc selenide (ZnSe)
Edrine Damulira
doaj   +1 more source

High sensitivity of room-temperature terahertz photodetector based on silicon

iScience, 2022
Summary: Silicon (Si) is the most important semiconductor material broadly used in both electronics and optoelectronics. However, the performance of Si-based room temperature detectors is far below the requirements for direct detection in the terahertz ...
Qinxi Qiu, Wanli Ma, Jingbo Li, Lin Jiang, Wangchen Mao, Xuehui Lu, Niangjuan Yao, Yi Shi, Zhiming Huang   +8 more
doaj   +1 more source

Influence of α-particles irradiation on the properties and performance of silicon semiconductor detectors

Journal of Physics: Conference Series, 2021
Deterioration of the operation parameters of p-type Si surface-barrier detector and Si(Li) p-i-n detector upon irradiation by alpha-particles was investigated.
S. Bakhlanov, N. Bazlov, I. Chernobrovkin, A. Derbin, I. Drachnev, I. Kotina, O. Konkov, A. Kuzmichev, M. Mikulich, V. Muratova, M. Trushin, E. Unzhakov   +11 more
semanticscholar   +1 more source