Results 11 to 20 of about 122,249 (293)

Technology CAD (TCAD) Simulations of Mg₂Si/Si Heterojunction Photodetector Based on the Thickness Effect

Sensors, 2021
Research on infrared detectors has been widely reported in the literature. For infrared detectors, PbS, InGaAs, PbSe, InSb, and HgxCd1-xTe materials are the most widely used and have been explored for photodetection applications. However, these are toxic
Hong Yu, Shentong Ji, Xiangyan Luo, Quan Xie   +3 more
doaj   +1 more source

Development of miniSGD, a proof-of-concept balloon experiment for a narrow field of view Si/CdTe semiconductor Compton telescope

International Conference on Rebooting Computing, 2023
The MeV gamma-ray band is very important for understanding high-energy cosmic phenomena such as particle acceleration and elemental synthesis, but its sensitivity is several orders of magnitude less than that of the X-ray, GeV, and TeV bands and is ...
Keigo Okuma, K. Nakazawa, S. Takeda, Mii Ando, Y. Omiya, M. Oguchi, Atsuya Tanaka, Yuna Tsuji, S. Watanabe, Tadayuki Takahashi, M. Kobayashi, Naoki Ishida, Takahiro Minami, M. Onishi, T. Arai   +14 more
semanticscholar   +1 more source

A New Approach for Sensitive Characterization of Semiconductor Laser Beams Using Metal-Semiconductor Thermocouples

Sensors, 2022
This paper presents the results of beam investigations on semiconductor IR lasers using novel detectors based on thermocouples. The work covers the design, the fabrication of detectors, and the experimental validation of their sensitivity to IR radiation.
Anna Katarzyna Piotrowska, Adam Łaszcz, Michał Zaborowski, Artur Broda, Dariusz Szmigiel   +4 more
doaj   +1 more source

Optical Autocorrelation Measurement for Ultrafast Pulses at NIR Wavelengths Using GaP, GaAsP, and Si Photoconductive Detectors

Applied Sciences, 2023
In this article, we report on an optical real-time autocorrelator readout with a 5 Hz refresh rate, equipped with a transimpedance amplified photodetector based on the two-photon absorption (TPA) of semiconductor photodiodes (PDs) for ultrashort (1 < ps)
Hyung-Sik Kim, Yong-Sik Lim
doaj   +1 more source

Low-Noise HEMTs for Coherent Elastic Neutrino Scattering and Low-Mass Dark Matter Cryogenic Semiconductor Detectors [PDF]

Journal of Low Temperature Physics, 2019
We present the noise performance of high electron mobility transistors (HEMT) developed by CNRS/C2N laboratory. Various HEMT’s gate geometries with 2 pF to 230 pF input capacitance have been studied at 4  K.
A. Juillard, J. Billard, D. Chaize, J. Filippini, D. Misiak, L. Vagneron, A. Cavanna, Q. Dong, Y. Jin, C. Ulysse, A. Bounab, X. Broise, C. Nones, A. Phipps   +13 more
semanticscholar   +1 more source

Ion Beam Modification for Si Photonics

Physics, 2022
Ion implantation has played a significant role in semiconductor device fabrication and is growing in significance in the fabrication of Si photonic devices. In this paper, recent progress in the growth and characterization of Si and Ge quantum dots (QDs)
Lyudmila V. Goncharova, Peter J. Simpson
doaj   +1 more source

Development of semiconductor imaging detectors for a Si/CdTe Compton camera

, 2007
Shin Watanabe, Shin׳ichiro Takeda, Shin-­nosuke Ishikawa, Hirokazu Odaka, Masayoshi Ushio, Takaaki Tanaka, Kazuhiro Nakazawa, Tadayuki Takahashi, H. Tajima, Yasushi Fukazawa, Yoshikatsu Kuroda, M. Onishi   +11 more
openalex   +3 more sources

Investigation of the radiation hardness of GaAs:Cr semiconductor detectors irradiated with fast neutrons at the reactor IBR-2

Journal of Physics: Conference Series, 2020
Investigation of the semiconductor detectors properties under neutron irradiation is very important for their practical application. High-resistivity gallium arsenide detectors (GaAs:Cr) were irradiated with various fast neutron fluences in range from 3 ...
U. Kruchonak, S. Abou El-Azm, M. Bulavin, G. Chelkov, M. Gostkin, A. Guskov, A. Sheremetyeva, N. Zamiatin, A. Zhemchugov   +8 more
semanticscholar   +1 more source

Large-area Si(Li) detectors for X-ray spectrometry and particle tracking in the GAPS experiment [PDF]

Journal of Instrumentation, 2019
The first lithium-drifted silicon (Si(Li)) detectors to satisfy the unique geometric, performance, and cost requirements of the General Antiparticle Spectrometer (GAPS) experiment have been produced by Shimadzu Corporation. The GAPS Si(Li) detectors will
F. Rogers, M. Xiao, K. Perez, S. Boggs, T. Erjavec, L. Fabris, H. Fuke, C. Hailey, M. Kozai, A. Lowell, N. Madden, M. Manghisoni, S. McBride, V. Re, E. Riceputi, N. Saffold, Y. Shimizu   +16 more
semanticscholar   +1 more source

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Nanoscale Research Letters, 2020
GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices.
Yiqun Zhao, Libin Tang, Shengyi Yang, Shu Ping Lau, Kar Seng Teng   +4 more
doaj   +1 more source