Results 21 to 30 of about 122,249 (293)

Stable perovskite single-crystal X-ray imaging detectors with single-photon sensitivity

Nature Photonics, 2023
A major thrust of medical X-ray imaging is to minimize the X-ray dose acquired by the patient, down to single-photon sensitivity. Such characteristics have been demonstrated with only a few direct-detection semiconductor materials such as CdTe and Si ...
Kostiantyn Sakhatskyi, B. Turedi, G. Matt, Erfu Wu, Anastasiia Sakhatska, Vitalii Bartosh, M. Lintangpradipto, Rounak Naphade, I. Shorubalko, O. Mohammed, S. Yakunin, O. Bakr, M. Kovalenko   +12 more
semanticscholar   +1 more source

Study of induced defects for silicon single crystal by pulse LaserNd – YAG irradiation [PDF]

مجلة جامعة الانبار للعلوم الصرفة, 2008
The Laser interaction with the semiconductor (si) is very important operations which are so important in Laser industrial applications. For this interaction the effected mechanical of induced diffusion which connected in this work of detectors during the
Abdul-Kareem H.Assaf, Ibrahim J.Abdullah, Maroof J. Rabee, Asmat R.Abdulgaffor   +3 more
doaj   +1 more source

Coupled Strip-Array Waveguides for Integrated Mid-IR Gas Sensing

Photonics, 2023
Non-dispersive infrared (NDIR) absorption spectroscopy is a widespread approach to gas sensing due to its selectivity and conceptual simplicity. One of the main challenges towards the development of fully integrated NDIR sensors is the design and ...
Pooja Thakkar, Clément Fleury, Gerald Stocker, Florian Dubois, Thang Duy Dao, Reyhaneh Jannesari, Parviz Saeidi, Gerald Pühringer, Thomas Ostermann, Thomas Grille, Bernhard Jakoby, Andreas Tortschanoff, Cristina Consani   +12 more
doaj   +1 more source

An electron paramagnetic resonance study of the electron transport in heavily Si-doped high Al content AlxGa1−xN

AIP Advances, 2023
High Al mole fraction AlGaN is an ultrawide bandgap semiconductor with potential applications in power electronics and deep UV detectors. Although n-type material is achievable with Si-doping, the role of Si is controversial, particularly for AlxGa1−xN ...
M. E. Zvanut, Jackson P. Hanle, Subash Paudel, Ryan Page, Chandrashekhar Savant, Yongjin Cho, H. Grace Xing, Debdeep Jena   +7 more
doaj   +1 more source

On Determining Dead Layer and Detector Thicknesses for a Position-Sensitive Silicon Detector [PDF]

, 2018
In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall ...
Anderson, C., Barney, J., Brown, K. W., Chajecki, Z., Chan, K. P., Chen, G., Estee, J., Lee, Jenny, Li, Z., Lynch, W. G., Manfredi, J., Niu, C. Y., Pruitt, C., Rogers, A. M., Sanetullaev, A., Setiawan, H., Showalter, R., Tsang, C. Y., Tsang, M. B., Winkelbauer, J. R., Xiao, Z., Xu, Z.   +21 more
core   +2 more sources

Large area Si low-temperature light detectors with Neganov-Luke effect [PDF]

, 2015
Next generation calorimetric experiments for the search of rare events rely on the detection of tiny amounts of light (of the order of 20 optical photons) to discriminate and reduce background sources and improve sensitivity.
Biassoni, M., Brofferio, C., Capelli, S., Cassina, L., Clemenza, M., Cremonesi, O., Faverzani, M., Ferri, E., Giachero, A., Giordano, C., Gironi, L., Gotti, C., Maino, M., Margesin, B., Nucciotti, A., Pavan, M., Pessina, G., Previtali, E., Puiu, A., Sisti, M., Terranova, F.   +20 more
core   +2 more sources

Comparison of Silicon, Germanium, Gallium Nitride, and Diamond for using as a detector material in experimental high energy physics

Results in Physics, 2018
Semiconductor detectors with Silicon as the sensor material are widely used in High Energy Physics (HEP) experiments for high precision tracking and determination of primary and secondary vertices with good spatial resolution.
Shyam Kumar, Bilal Ahmad Reshi, Raghava Varma   +2 more
doaj   +1 more source

CMOS Terahertz Metamaterial Based 64 × 64 Bolometric Detector Arrays [PDF]

, 2017
We present two terahertz detectors composed of microbolometer sensors (vanadium oxide and silicon pn diode) and metamaterial absorbers monolithically integrated into a complementary metal oxide semiconductor (CMOS) process.
Cumming, David R.S., Escorcia Carranza, Ivonne, Gough, John, Grant, James   +3 more
core   +1 more source

The Total Ionizing Dose Effects on Perovskite CsPbBr₃ Semiconductor Detector

Sensors, 2023
Perovskite CsPbBr3 semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties, demonstrating strong potential for γ-radiation and X-ray detection at room temperature. However, the total dose effects
Wuying Ma, Linyue Liu, Haoming Qin, Runlong Gao, Baoping He, Shilong Gou, Yihui He, Xiaoping Ouyang   +7 more
doaj   +1 more source

Large-scale fabrication of CMOS-compatible silicon-OLED heterojunctions enabled infrared upconverters

APL Photonics, 2023
Infrared-to-visible upconverters have widespread application prospects, including bioimaging, night vision, and defense security. A typical upconverter is generally constructed by integrating an infrared photodetector (PD) detecting low-energy infrared ...
Tianyu Rao, Qun Hao, Ge Mu, Tianling Qin, Yimei Tan, Pengfei Zhao, Dexi Kong, Menglu Chen, Xin Tang   +8 more
doaj   +1 more source