Results 31 to 40 of about 122,249 (293)

Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments

Scientific Reports, 2021
The development of three-dimensional architectures in semiconductor technology is paving the way to new device concepts for various applications, from quantum computing to single photon avalanche detectors.
Marco Albani, Roberto Bergamaschini, Andrea Barzaghi, Marco Salvalaglio, Joao Valente, Douglas J. Paul, Axel Voigt, Giovanni Isella, Francesco Montalenti   +8 more
doaj   +1 more source

Low Gain Avalanche Detectors (LGAD) for particle physics and synchrotron applications [PDF]

, 2018
A new avalanche silicon detector concept is introduced with a low gain in the region of ten, known as a Low Gain Avalanche Detector, LGAD. The detector's characteristics are simulated via a full process simulation to obtain the required doping profiles ...
Ashby, J., Bates, R., Bullough, M., Doherty, F., Flores, L., Maneuski, D., Moffat, N., Simon, L., Tartoni, N.   +8 more
core   +1 more source

Performance limits of terahertz zero biased rectifying detectors for direct detection

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016
Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic
A.G. Golenkov
doaj   +1 more source

Near Infrared Efficiency Enhancement of Silicon Photodiodes by Integration of Metal Nanostructures Supporting Surface Plasmon Polaritrons

Sensors, 2023
Recent years have witnessed a growing interest in detectors capable of detecting single photons in the near-infrared (NIR), mainly due to the emergence of new applications such as light detection and ranging (LiDAR) for, e.g., autonomous driving.
Elia Scattolo, Alessandro Cian, Luisa Petti, Paolo Lugli, Damiano Giubertoni, Giovanni Paternoster   +5 more
doaj   +1 more source

Development of a Si/CdTe semiconductor Compton telescope

, 2004
We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor
Fukazawa, Yasushi, Mitani, Takefumi, Nakamoto, Tatsuya, Nakamura, Hidehito, Nakazawa, Kazuhiro, Nomachi, Masaharu, Oonuki, Kousuke, Sato, Goro, Tajima, Hiroyasu, Takahashi, Tadayuki, Tamura, Ken'ichi, Tanaka, Takaaki, Watanabe, Shin   +12 more
core   +1 more source

Measurement of the energy resolution and calibration of hybrid pixel detectors with GaAs:Cr sensor and Timepix readout chip [PDF]

, 2015
This paper describes an iterative method of per-pixel energy calibration of hybrid pixel detectors with GaAs:Cr sensor and Timepix readout chip. A convolution of precisely measured spectra of characteristic X-rays of different metals with the resolution ...
Bell, S. T., Butler, A. P., Butler, P. H., Chelkov, G. A., Dedovich, D. V., Demichev, M. A., Elkin, V. G., Gostkin, M. I., Kotov, S. A., Kozhevnikov, D. A., Kruchonak, U. G., Nozdrin, A. A., Porokhovoy, S. Yu., Potrap, I. N., Smolyanskiy, P. I., Zakhvatkin, M. M., Zhemchugov, A. S.   +16 more
core   +3 more sources

Designs and electric properties studied of 3D trench electrode Si detector with adjustable central collection electrode

AIP Advances, 2018
In order to improve the radiation resistance of semiconductor detector, 3D trench electrode Si detector structures have been proposed by the Brookhaven National Laboratory (BNL) in 2009.
Chuan Liao, Manwen Liu, Ya Zhang, Jun Zhao, Zheng Li   +4 more
doaj   +1 more source

Processing and characterization of epitaxial GaAs radiation detectors

, 2015
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $\mu\textrm{m}$ - 130 $\mu\textrm{m ...
Arsenovich, T., Gädda, A., Härkönen, J., Junkes, A., Karadzhinova, A., Kostamo, P., Lipsanen, H., Luukka, P., Mattila, M., Nenonen, S., Peltola, T., Riekkinen, T., Tuominen, E., Winkler, A., Wu, X.   +14 more
core   +1 more source

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm [PDF]

, 2013
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented.
Allred, P., Buller, G.S., Gallacher, Kevin, Huante-Ceron, E., Ikonic, Z., Intermite, G., Kelsall, R.W., Knights, A.P., Leadley, D.R., Lever, L.J.M., Myronov, M., Paul, D.J., Pilgrim, N.J., Warburton, R.E.   +13 more
core   +2 more sources

A study of hydrothermally grown ZnO nanorod-based metal-semiconductor-metal UV detectors on glass substrates

, 2017
This study reports hydrothermally grown zinc oxide nanorod-based metal-semiconductor-metal ultraviolet detectors with palladium metal as the electrodes.
Shaivalini Singh, Y. Kumar, H. Kumar, S. Vyas, C. Periasamy, P. Chakrabarti, S. Jit, Si-Hyun Park   +7 more
semanticscholar   +1 more source