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SiGe pMOSFETs Fabricated on Limited Area SiGe Virtual Substrates
MRS Proceedings, 2002ABSTRACTSilicon germanium pMOSFETs with channel lengths down to 0.4m have been fabricated on limited area silicon germanium virtual substrates. The devices have a 5nm thick Si0.3Ge0.7 active layer grown by MBE on top of relaxed Si0.7Ge0.3 virtual substrate.
Andrew Waite +9 more
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Pt Reactions with Ge, SiGe, and Si/SiGe Superlattices
MRS Proceedings, 1992ABSTRACTReactions between Pt and SiGe alloy have been studied by comparing several structures: Pt/Ge, Pt/SiGe, and Pt/Si-SiGe superlattices. The Ge, SiGe layers and Si-SiGe superlattices were grown on (100) Si substrates by the ultrahigh vacuum/chemical vapor deposition technique. Pt-Ge reactions start around 200 °C, forming PtzGe.
P. J. Wang +4 more
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Anomalous Coiling of SiGe/Si and SiGe/Si/Cr Helical Nanobelts
Nano Letters, 2006The fabrication of nanohelices by the scrolling of strained bilayers is investigated. It is shown that structure design is dominated by edge effects rather than bulk crystal properties such as the Young's modulus when the dimensions of the structures are reduced below 400 nm. SiGe/Si/Cr, SiGe/Si, and Si/Cr helical nanobelts are used as test structures.
Zhang, Li +6 more
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Journal of Applied Physics, 2013
Nanometer-scale scanning moiré fringes (SMFs) of the hetero interfaces in Si/Si1−xGex/Si1−xGex/Si1−xGex multi-layers have been obtained by high-angle annular dark field scanning transmission electron microscope. The SMFs that appeared at each interface were commensurate, when the layers had no defects from epitaxial growth.
Suhyun Kim +6 more
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Nanometer-scale scanning moiré fringes (SMFs) of the hetero interfaces in Si/Si1−xGex/Si1−xGex/Si1−xGex multi-layers have been obtained by high-angle annular dark field scanning transmission electron microscope. The SMFs that appeared at each interface were commensurate, when the layers had no defects from epitaxial growth.
Suhyun Kim +6 more
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2013
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?????????????????? ???????????????????? ???????????????????????? ?????????????? ?????????????????? ??-???????????????? ???????????? ???? 1??10????? ????????? ?? ???????????????????? ???????? ?? ?????????????????? ???? 14 ???? ???? ???????????????????????????????????? ???????????????????? ???????????????????? Si1-xGex ?? ?????????????????? ??????????????
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2014
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SiGe-Space-Synthesizer-Entwicklung eines SiGe-Synthesizerdemonstrators : SISSI ; Schlussbericht
2009Ill., graph. Darst.
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1998
Si-based heterostructures are being intensively studied since various new functionalities which cannot be obtained with Si alone are expected owing to the predictable and controllable modification of the band structure [1]. In particular, SiGe/Si heterostructures are of great importance and have had significant impact on Si-based device applications as
N. Usami, Y. Shiraki
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Si-based heterostructures are being intensively studied since various new functionalities which cannot be obtained with Si alone are expected owing to the predictable and controllable modification of the band structure [1]. In particular, SiGe/Si heterostructures are of great importance and have had significant impact on Si-based device applications as
N. Usami, Y. Shiraki
openaire +1 more source