Results 201 to 210 of about 35,862 (243)

Anomalous Coiling of SiGe/Si and SiGe/Si/Cr Helical Nanobelts

Nano Letters, 2006
The fabrication of nanohelices by the scrolling of strained bilayers is investigated. It is shown that structure design is dominated by edge effects rather than bulk crystal properties such as the Young's modulus when the dimensions of the structures are reduced below 400 nm. SiGe/Si/Cr, SiGe/Si, and Si/Cr helical nanobelts are used as test structures.
Zhang, Li, Ruh, Elisabeth, Gruetzmacher, Detlev, Dong, Lixin, Bell, Dominik J., Nelson, Bradley J., Schoenenberger, Christian   +6 more
openaire   +5 more sources

ChemInform Abstract: Selective Etching of SiGe on SiGe/Si Heterostructures

ChemInform, 1991
AbstractChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.
G. K. CHANG, T. K. CARNS, S. S. RHEE, K. L. WANG   +3 more
openaire   +1 more source

Channeling studies of implantation damage in SiGe superlattices and SiGe alloys

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
Abstract Recent studies have shown a large difference in damage rate between the Si and the SiGe layers of strained-layer superlattices. In order to understand this phenomenon, we have measured amorphisation rates in strained SiGe layers of different composition grown on both Ge and Si substrates and compared these with the damage rates in a pure Si ...
M. Vos, C. Wu, I.V. Mitchell, T.E. Jackman, J.-M. Baribeau, J.P. McCaffrey   +5 more
openaire   +1 more source

?????????????????????????????????????? ???????????? ???????????????? ?? ?????????????????????? ???? ???????????? ?????????????? ?????????????????? SiGe

2014
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openaire   +1 more source

Selective Etching of SiGe on SiGe / Si Heterostructures

Journal of The Electrochemical Society, 1991
G. K. Chang, T. K. Carns, S. S. Rhee, K. L. Wang   +3 more
openaire   +1 more source

The effect of vacancy defects on the conductive properties of SiGe

Physics Letters, Section A: General, Atomic and Solid State Physics, 2021
Cheng Li, Gang Xiang, Limeng Shen
exaly  

High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET

Nanomaterials, 2023
Yung-Chun Wu, Guang-Li Luo, Kuei-Shu Chang-Liao   +2 more
exaly  

SiGe SIMMWICs

1997 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Technical Papers, 2002
J.-F. Luy, P. Russer
openaire   +1 more source

SiGe nanostructures

Surface Science Reports, 2009
I. Berbezier, A. Ronda
openaire   +1 more source

SiGe HBTs

2021
Jae-Sung Rieh, Omeed Momeni
openaire   +1 more source