Results 111 to 120 of about 6,460 (218)
A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process. [PDF]
Micromachines (Basel), 2023 Zhou P, Yan P, Chen J, Chen Z, Hong W.
europepmc +1 more source
A 20-44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications. [PDF]
Micromachines (Basel), 2021 Balani W +6 more
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A Low-Phase-Noise 8 GHz Linear-Band Sub-Millimeter-Wave Phase-Locked Loop in 22 nm FD-SOI CMOS. [PDF]
Micromachines (Basel), 2023 Kebe M, Sanduleanu M.
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An On-Chip Bandpass Filter Using Complementary Slit-Ring-Resonator-Loaded Spoof Surface Plasmon Polaritons with a Flexible Notch-Band. [PDF]
Micromachines (Basel), 2023 Cao X, Wang C, Li W, Cai Q.
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A Compact and Power-Efficient Noise Generator for Stochastic Simulations. [PDF]
IEEE Trans Circuits Syst I Regul Pap, 2023 Zhao H, Sarpeshkar R, Mandal S.
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Tx/Rx devices at three spot frequencies in the 60-312 GHz range will be provided to experimentally assess intra-/inter-chip communication channels.
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SiGe-BiCMOS frontend for mm-wave radiometry
This dissertation describes the development of Radio Frequency (RF) frontend modules, employing Si / SiGe ICs, fully encapsulated into metal waveguide housings for millimeter-wave radiometry. The modules are intended for use in an existing millimeter-wave passive imaging system.
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Availability of run with SiPM calorimeter-WP14 and gas detectors-WP13 chips. (Task 4.3)
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Design of AD Converters in 0.35 µm SiGe BiCMOS Technology for Ultra-Wideband M-Sequence Radar Sensors. [PDF]
Sensors (Basel)Sokol M, Galajda P, Saliga J, Jurik P.
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