Reducing Avalanche Build-Up Time by Integrating a Single-Photon Avalanche Diode with a BiCMOS Gating Circuit [PDF]
SensorsIt is shown that the integration of a single-photon avalanche diode (SPAD) together with a BiCMOS gating circuit on one chip reduces the parasitic capacitance a lot and therefore reduces the avalanche build-up time. The capacitance of two bondpads, which
Bernhard Goll +3 more
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Sub-terahertz feedback interferometry and imaging with emitters in 130 nm BiCMOS technology [PDF]
Scientific Reports, 2023 In this work, we present the effect of self-mixing in compact terahertz emitters implemented in a 130 nm SiGe BiCMOS technology. The devices are based on a differential Colpitts oscillator topology with optimized emission frequency at the fundamental ...
Dmytro B. But +6 more
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A 90–100 GHz SiGe BiCMOS 6-Bit Digital Phase Shifter with a Coupler-Based 180° Unit for Phased Arrays [PDF]
MicromachinesThis paper presents a 90–100 GHz wideband digital phase shifter with a fine resolution of 5.625°, implemented in a 0.13 μm SiGe BiCMOS process. A switch-type architecture with six cascaded units, including a novel 180° cell based on a broadband coupler ...
Hongchang Shen +7 more
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A 900 μm2 BiCMOS Temperature Sensor for Dynamic Thermal Management [PDF]
Sensors, 2020 The extreme miniaturization of electronic technologies has turned varying and unpredictable temperatures into a first-class concern for high performance processors which mitigate the problem employing dynamic thermal managements control systems. In order
Hernán Aparicio, Pablo Ituero
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A Wideband Cryogenic Readout Amplifier with Temperature-Insensitive Gain for SNSPD [PDF]
Sensors, 2022 This paper presents a temperature-insensitive wideband cryogenic amplifier for superconducting nanowire single-photon detectors (SNSPD). With a proposed folded diode-connected transistor load to realize a good device-tracking feature, the theoretical ...
Xiaokang Niu +3 more
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A 26–28 GHz, Two-Stage, Low-Noise Amplifier for Fifth-Generation Radio Frequency and Millimeter-Wave Applications [PDF]
SensorsThis paper presents a high-gain low-noise amplifier (LNA) operating at the 5G mm-wave band. The full design combines two conventional cascode stages: common base (CB) and common emitter (CS).
Aymen Ben Hammadi +3 more
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Transistors for Solid-State Microwave Switches (A Review)
Известия высших учебных заведений России: Радиоэлектроника, 2023 Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once. The
Elena M. Torina +2 more
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SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems
IEEE Journal of Microwaves, 2021 This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO.
Thomas Zimmer +25 more
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Cascoded Active Quencher for SPADs With Bipolar Differential Amplifier in 0.35 μm BiCMOS
IEEE Photonics Journal, 2022 Fast active quenching of single-photon avalanche diodes (SPADs) is important to reduce the afterpulsing probability (APP). An option to reduce the reaction time of electronics to a SPAD's avalanche is to design a quencher exploiting bipolar ...
Bernhard Goll +2 more
doaj +1 more source
IEEE Access, 2022 The miniaturization and application development are the expected challenges on the today engineering design research on bandpass (BP) type negative group delay (NGD) circuit.
Blaise Ravelo +8 more
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