Results 21 to 30 of about 8,888 (167)
Design of binary dynamic BiCMOS circuits(二值动态BiCMOS电路设计)
Zhejiang Daxue xuebao. Lixue ban, 2008 动态电路在当前低功耗设计中受到越来越多的关注，而兼具CMOS电路及TTL电路优点的BiCMOS电路的应用日益广泛.本文以一种n型BiCMOS动态电路为基础，提出了一种新的二值动态BiCMOS电路的通用结构及设计方法，根据该结构及方法设计的动态电路不仅集成度高、功耗低、速度快、电流驱动能力强，而且结构简单，设计方便，计算机模拟结果证明，设计的电路具有正确的逻辑功能，且速度快，功耗低.
HUXiao-hui(胡晓慧) +1 more
doaj +1 more source
SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers
IEEE Access, 2023 Innovation and evolution are paramount where the demand for wideband, data-intensive connectivity is ever-increasing, and the only constant is change.
Jaco Du Preez +2 more
doaj +1 more source
Konzepte für digitale Multiplizierer in BICMOS Technik
, 2022 S.33-39Dieser Beitrag beschäftigt sich mit dem Entwurf digitaler Multipliziererkonzepte in BiCMOS-Technik. Am Beispiel des Booth Multiplizierers wird der Einsatz schneller BiCMOS-Schaltungen ausführlich diskutiert.
Eßer, W., Schardein, W., Rothermel, A.
core +1 more source
Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology. [PDF]
, 2000 Bipolar transistors are well known for its high current driving capability and current gains, while CMOS transistors are dominant in the integrated circuit market because of its low power consumption and small size advantage.
Abdul Wahab, Mohd. Zahrin +7 more
core +1 more source
168-195 GHz Power Amplifier With Output Power Larger Than 18 dBm in BiCMOS Technology
IEEE Access, 2020 This paper presents a 4-way combined G-band power amplifier (PA) fabricated with a 130-nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is designed at 185 GHz, which consists of three stages to get an overall gain and ...
Abdul Ali +5 more
doaj +1 more source
IEEE Photonics Journal, 2023 In this work, we present an O-band dual-polarization coherent receiver optical sub-assembly (cROSA), monolithically integrated in a 0.25 $\mu$m BiCMOS technology.
Pascal M. Seiler +7 more
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Sensors, 2019 This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research.
Mladen Božanić, Saurabh Sinha
doaj +1 more source
A SiGe 3-stage LNA for automotive radar application from 76 to 81 GHz [PDF]
ITM Web of Conferences, 2019 This paper presents the simulation results of the W-band 3-stage low noise amplifier which is designed in 0.13 μm SiGe BiCMOS technology. The LNA achieves a peak S21 of 24.1 dB and noise figure of 6 dB at 80 GHz with 3 dB bandwidth of 14 GHz from 73 to ...
Budnyaev Vadim, Vertegel Valeriy
doaj +1 more source
Design of a 2 GHz Linear-in-dB Variable-Gain Amplifier with 80-dB Gain Range
Active and Passive Electronic Components, 2014 A broadband linear-in-dB variable-gain amplifier (VGA) circuit is implemented in 0.18 μm SiGe BiCMOS process. The VGA comprises two cascaded variable-gain core, in which a hybrid current-steering current gain cell is inserted in the Cherry-Hooper ...
Zhengyu Sun, Yuepeng Yan
doaj +1 more source
Frontiers in Physics, 2014 This paper presents as a novelty a fully monolithically integrated 10Gb/s silicon modulator consisting of an electrical driver plus optical phase modulator in 0.25µm SiGe:C BiCMOS technology on one chip, where instead of a SOI CMOS process (only MOS ...
Bernhard eGoll +9 more
doaj +1 more source