Results 21 to 30 of about 7,247 (218)
IEEE Access, 2022 The miniaturization and application development are the expected challenges on the today engineering design research on bandpass (BP) type negative group delay (NGD) circuit.
Blaise Ravelo +8 more
doaj +1 more source
Particularities of complex-functional monolithic integrated circuits post-layout simulation [PDF]
ITM Web of Conferences, 2019 This paper presents a silicon-based complex-functional monolithic microwave integrated circuits (MMICs) design methodology. Post-layout simulation stage particularities are discussed. Pre-tapeout functionality verification results of the C-band phase and
Filippov Ivan +2 more
doaj +1 more source
0.13-mm SiGe BiCMOS technology with More-than-Moore modules
, 2022 S.62-65This paper presents three different technology modules, integrated into a 0.13-mm SiGe BiCMOS process; namely RF-MEMS switch, microfluidics and heterogeneous integration technologies. The RF-MEMS switch module is optimized for mm-wave applications
Cetindogan, B. +10 more
core +1 more source
A 15-Gbps BiCMOS XNOR gate for fast recognition of COVID-19 in binarized neural networks
, 2022 The COVID-19 pandemic is spreading around the world causing more than 177 million cases and over 3.8 million deaths according to the European Centre for Disease Prevention and Control.
W. Marar, Hazem +3 more
core +1 more source
W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology [PDF]
ITM Web of Conferences, 2019 The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz.
Kozhemyakin Alexander, Kravchenko Ivan
doaj +1 more source
A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology
, 2023 4952This work presents a static divide-by-16 in a 130-nm SiGe-BiCMOS technology, aiming to demonstrate the technologies' potential. A bias network followed by four divide-by-2 stages and an output buffer is designed. The DC power consumption of the first
Bredendiek, Christian +4 more
core +1 more source
Dual‐channel pre‐regulator structure for the bandgaps in high step‐down DC‐DC converters
Electronics Letters, Volume 59, Issue 23, December 2023., 2023 This paper proposed a dual‐channel pre‐regulation structure for the bandgaps, which is suitable for the high step‐down DC‐DC convertors with low quiescent current and small area requirement. Abstract High step‐down DC‐DC converters require a robust and low power pre‐regulated supply for bandgap reference.
Jiarui Ren, Yue Zhao, Zhiming Xiao
wiley +1 more source
Design of patch active electronically scanned antenna for 5G communication system [PDF]
ITM Web of Conferences, 2019 The article deals with the research and design results of an active electronically scanned antenna (AESA) based on beamforming BiCMOS monolithic integrated circuit (MIC) and patch antenna radiators. The operating frequency band is sub-6 GHz.
Snegur Dmitriy, Schekaturin Andrey
doaj +1 more source
SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers
IEEE Access, 2023 Innovation and evolution are paramount where the demand for wideband, data-intensive connectivity is ever-increasing, and the only constant is change.
Jaco Du Preez +2 more
doaj +1 more source
A Flexible 0.18
IEEE Journal of the Electron Devices Society, 2013 Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance.
Takashi Hashimoto +9 more
doaj +1 more source