Results 21 to 30 of about 13,901 (202)
Simple BiCMOS CCCTA Design and Resistorless Analog Function Realization
The Scientific World Journal, 2014 The simple realization of the current-controlled conveyor transconductance amplifier (CCCTA) in BiCMOS technology is introduced. The proposed BiCMOS CCCTA realization is based on the use of differential pair and basic current mirror, which results in ...
Worapong Tangsrirat
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A Review on Passive and Integrated Near-Field Microwave Biosensors
Biosensors, 2017 In this paper we review the advancement of passive and integrated microwave biosensors. The interaction of microwave with biological material is discussed in this paper.
Subhajit Guha +2 more
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168-195 GHz Power Amplifier With Output Power Larger Than 18 dBm in BiCMOS Technology
IEEE Access, 2020 This paper presents a 4-way combined G-band power amplifier (PA) fabricated with a 130-nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is designed at 185 GHz, which consists of three stages to get an overall gain and ...
Abdul Ali +5 more
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IEEE Photonics Journal, 2023 In this work, we present an O-band dual-polarization coherent receiver optical sub-assembly (cROSA), monolithically integrated in a 0.25 $\mu$m BiCMOS technology.
Pascal M. Seiler +7 more
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Design of binary dynamic BiCMOS circuits(二值动态BiCMOS电路设计)
Zhejiang Daxue xuebao. Lixue ban, 2008 动态电路在当前低功耗设计中受到越来越多的关注，而兼具CMOS电路及TTL电路优点的BiCMOS电路的应用日益广泛.本文以一种n型BiCMOS动态电路为基础，提出了一种新的二值动态BiCMOS电路的通用结构及设计方法，根据该结构及方法设计的动态电路不仅集成度高、功耗低、速度快、电流驱动能力强，而且结构简单，设计方便，计算机模拟结果证明，设计的电路具有正确的逻辑功能，且速度快，功耗低.
HUXiao-hui(胡晓慧) +1 more
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A SiGe 3-stage LNA for automotive radar application from 76 to 81 GHz [PDF]
ITM Web of Conferences, 2019 This paper presents the simulation results of the W-band 3-stage low noise amplifier which is designed in 0.13 μm SiGe BiCMOS technology. The LNA achieves a peak S21 of 24.1 dB and noise figure of 6 dB at 80 GHz with 3 dB bandwidth of 14 GHz from 73 to ...
Budnyaev Vadim, Vertegel Valeriy
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Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications [PDF]
, 2007 In this paper, a 4.2-5.4 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mu m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs ...
Bozkurt, Ayhan +3 more
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Sensors, 2019 This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research.
Mladen Božanić, Saurabh Sinha
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SiGe HBT wideband amplifier for millimeter wave applications
Journal of Telecommunications and Information Technology, 2023 A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz.
Marco Krˇcmar +2 more
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Design of a 2 GHz Linear-in-dB Variable-Gain Amplifier with 80-dB Gain Range
Active and Passive Electronic Components, 2014 A broadband linear-in-dB variable-gain amplifier (VGA) circuit is implemented in 0.18 μm SiGe BiCMOS process. The VGA comprises two cascaded variable-gain core, in which a hybrid current-steering current gain cell is inserted in the Cherry-Hooper ...
Zhengyu Sun, Yuepeng Yan
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