Results 21 to 30 of about 467 (179)
Design of a 2 GHz Linear-in-dB Variable-Gain Amplifier with 80-dB Gain Range
Active and Passive Electronic Components, 2014 A broadband linear-in-dB variable-gain amplifier (VGA) circuit is implemented in 0.18 μm SiGe BiCMOS process. The VGA comprises two cascaded variable-gain core, in which a hybrid current-steering current gain cell is inserted in the Cherry-Hooper ...
Zhengyu Sun, Yuepeng Yan
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Frontiers in Physics, 2014 This paper presents as a novelty a fully monolithically integrated 10Gb/s silicon modulator consisting of an electrical driver plus optical phase modulator in 0.25µm SiGe:C BiCMOS technology on one chip, where instead of a SOI CMOS process (only MOS ...
Bernhard eGoll +9 more
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SiGe HBT wideband amplifier for millimeter wave applications
Journal of Telecommunications and Information Technology, 2023 A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz.
Marco Krˇcmar +2 more
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Design of linear low-noise amplifier for 802.11ac based on SiGe BiCMOS technology
Dianzi Jishu Yingyong, 2018 This paper presents a 802.11ac low-noise amplifier with bypass function integrated in 0.36 μm SiGe BiCMOS process. In order to meet the specifications of the criteria, the methods for optimizing noise, power gain and stability were given.
Wei Qidi +3 more
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Two proposed BiCMOS inverters with enhanced performance
Ain Shams Engineering JournalThe BiCMOS technology finds wide applications when driving heavy loads such as those associated with off-chip loads or long runs within the chip. In this paper, two novel BiCMOS inverters that depend on using Darlington BJT pairs are presented. Also, the
Sherif M. Sharroush, Yasser S. Abdalla
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IEEE Journal of the Electron Devices Society, 2023 We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature.
Edmundo A. Gutierrez-D. +2 more
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Design investigation to improve voltage swing and bandwidth of the SiGe driver circuit for a silicon electro-optic ring modulator [PDF]
Advances in Radio Science, 2015 This paper reports on a new SiGe driver IC to address the low breakdown voltage level of modern BiCMOS transistors. An optical modulator driver IC in SiGe 250 nm technology with a supply voltage of 4.5 V is presented.
A. Fatemi, H. Gaul, U. Keil, H. Klar
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Nanophotonics, Volume 15, Issue 14, 27 July 2026.Integrated optical phased arrays are emerging as scalable engines for solid‐state beam steering and programmable wavefront control. This Review maps the field from beam‐steering principles and core building blocks to material platforms, system‐level bottlenecks, and application frontiers, highlighting how heterogeneous integration, aperiodic ...
Jingwei Li +7 more
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Simulation of Interference‐Enhanced Raman Amplification for Advanced Microelectronic Applications
physica status solidi (a), Volume 223, Issue 8, 22 April 2026.This work presents an open‐source tool modeling interference‐enhanced Raman intensities in any multilayered structures. Depending on the stack and laser source, constructive interferences can be exploited to improve strain or composition measurement.
D. Monteil +9 more
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Journal of Telecommunications and Information Technology, 2000 The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the
Steve Hall, Bill Eccleston
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