Results 31 to 40 of about 13,901 (202)
Frontiers in Physics, 2014 This paper presents as a novelty a fully monolithically integrated 10Gb/s silicon modulator consisting of an electrical driver plus optical phase modulator in 0.25µm SiGe:C BiCMOS technology on one chip, where instead of a SOI CMOS process (only MOS ...
Bernhard eGoll +9 more
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IEEE Journal of the Electron Devices Society, 2023 We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature.
Edmundo A. Gutierrez-D. +2 more
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Design of linear low-noise amplifier for 802.11ac based on SiGe BiCMOS technology
Dianzi Jishu Yingyong, 2018 This paper presents a 802.11ac low-noise amplifier with bypass function integrated in 0.36 μm SiGe BiCMOS process. In order to meet the specifications of the criteria, the methods for optimizing noise, power gain and stability were given.
Wei Qidi +3 more
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BiCMOS variable gain transimpedance amplifier for automotive applications [PDF]
, 2008 A
Baekelandt, Bart +7 more
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Two proposed BiCMOS inverters with enhanced performance
Ain Shams Engineering JournalThe BiCMOS technology finds wide applications when driving heavy loads such as those associated with off-chip loads or long runs within the chip. In this paper, two novel BiCMOS inverters that depend on using Darlington BJT pairs are presented. Also, the
Sherif M. Sharroush, Yasser S. Abdalla
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Design investigation to improve voltage swing and bandwidth of the SiGe driver circuit for a silicon electro-optic ring modulator [PDF]
Advances in Radio Science, 2015 This paper reports on a new SiGe driver IC to address the low breakdown voltage level of modern BiCMOS transistors. An optical modulator driver IC in SiGe 250 nm technology with a supply voltage of 4.5 V is presented.
A. Fatemi, H. Gaul, U. Keil, H. Klar
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SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers [PDF]
, 2008 We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform.
Bardin, Joseph C. +7 more
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Electronics Letters, 1991 A BiCMOS differential cascode voltage switch logic (DCVSL) gate is presented. The circuit consists of a CMOS differential logic circuit and a bipolar differential sense pair. The result is a high speed CMOS to ECL conversion circuit with relatively high logic density.
S. Liang, D.H.K. Hoe, C.A.T. Salama
openaire +1 more source
Journal of Telecommunications and Information Technology, 2000 The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the
Steve Hall, Bill Eccleston
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A breakdown voltage model for implanted resurf p-LDMOS device on n+ buried layer [PDF]
, 1994 This paper presents an analytical expression of the breakdown voltage of a high voltage implanted RESURF p-LDMOS device which uses the n+ buried layer as an effective device substrate.
Van Calster, A. +2 more
core +5 more sources