Results 31 to 40 of about 8,888 (167)
SiGe HBT wideband amplifier for millimeter wave applications
Journal of Telecommunications and Information Technology, 2023 A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz.
Marco Krˇcmar +2 more
doaj +1 more source
Design of linear low-noise amplifier for 802.11ac based on SiGe BiCMOS technology
Dianzi Jishu Yingyong, 2018 This paper presents a 802.11ac low-noise amplifier with bypass function integrated in 0.36 μm SiGe BiCMOS process. In order to meet the specifications of the criteria, the methods for optimizing noise, power gain and stability were given.
Wei Qidi +3 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2023 We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature.
Edmundo A. Gutierrez-D. +2 more
doaj +1 more source
Design investigation to improve voltage swing and bandwidth of the SiGe driver circuit for a silicon electro-optic ring modulator [PDF]
Advances in Radio Science, 2015 This paper reports on a new SiGe driver IC to address the low breakdown voltage level of modern BiCMOS transistors. An optical modulator driver IC in SiGe 250 nm technology with a supply voltage of 4.5 V is presented.
A. Fatemi, H. Gaul, U. Keil, H. Klar
doaj +1 more source
Advanced Physics Research, EarlyView.The mechanism and kinetics of selective GaAs growth on Si nanotip wafers via nanoheteroepitaxy were investigated as a function of pitch (center‐to‐center nanotip spacing). The pitch dependence reveals distinct surface‐diffusion‐controlled regimes, demonstrating that lateral Ga adatom transport on the SiO2 mask governs material redistribution and ...
Adriana Rodrigues +6 more
wiley +1 more source
Strain‐Tunable Photoluminescence From Ge Quantum Dots on Si Nanotips for CMOS‐Compatible Photonics
Advanced Physics Research, EarlyView.This work studies strain in Ge quantum dots grown on Si nanotips using photoluminescence, X‐ray diffraction, and band structure calculations. It shows how emission changes with dot size, evaluates strain in the dot and substrate, and explains the role of direct and indirect transitions in the optical behavior.
Diana Ryzhak +10 more
wiley +1 more source
, 2023 Currently, commercial radar systems are mainly found in the E-band. However, higher frequencies offer significant advantages in terms of absolute bandwidth and system design.
David Starke (17379985) +5 more
core +1 more source
Design and applications of tunable analog BiCMOS circuits
, 2022 S.165-168In this communication we will discuss design, merits, and applications of tunable analog BiCMOS circuits. Although the BiCMOS technology offers higher design flexibility due to presence of more types of active devices than the standard CMOS or ...
Hosticka, Bedrich J. +2 more
core +3 more sources
Journal of Telecommunications and Information Technology, 2000 The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the
Steve Hall, Bill Eccleston
doaj +1 more source
Parallel Vector Processing in Optical Computing With Jacobi Time‐Wave Packets
Laser &Photonics Reviews, EarlyView.Functionality of a single neuron and state of the art photonic acceleration with a Mach‐Zehnder‐interferometer (MZI) mesh (i), a crossbar array (ii) and a micro ring resonator (MRR) array (iii). In the proposed Jacobi time‐wave packet approach (iv) a single modulator (here a ring modulator) is performing the whole scalar vector product in a single ...
Janosch Meier +5 more
wiley +1 more source