Results 11 to 20 of about 467 (179)
A Flexible 0.18
IEEE Journal of the Electron Devices Society, 2013 Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance.
Takashi Hashimoto +9 more
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Design of patch active electronically scanned antenna for 5G communication system [PDF]
ITM Web of Conferences, 2019 The article deals with the research and design results of an active electronically scanned antenna (AESA) based on beamforming BiCMOS monolithic integrated circuit (MIC) and patch antenna radiators. The operating frequency band is sub-6 GHz.
Snegur Dmitriy, Schekaturin Andrey
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Simple BiCMOS CCCTA Design and Resistorless Analog Function Realization
The Scientific World Journal, 2014 The simple realization of the current-controlled conveyor transconductance amplifier (CCCTA) in BiCMOS technology is introduced. The proposed BiCMOS CCCTA realization is based on the use of differential pair and basic current mirror, which results in ...
Worapong Tangsrirat
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A Review on Passive and Integrated Near-Field Microwave Biosensors
Biosensors, 2017 In this paper we review the advancement of passive and integrated microwave biosensors. The interaction of microwave with biological material is discussed in this paper.
Subhajit Guha +2 more
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Design of binary dynamic BiCMOS circuits(二值动态BiCMOS电路设计)
Zhejiang Daxue xuebao. Lixue ban, 2008 动态电路在当前低功耗设计中受到越来越多的关注，而兼具CMOS电路及TTL电路优点的BiCMOS电路的应用日益广泛.本文以一种n型BiCMOS动态电路为基础，提出了一种新的二值动态BiCMOS电路的通用结构及设计方法，根据该结构及方法设计的动态电路不仅集成度高、功耗低、速度快、电流驱动能力强，而且结构简单，设计方便，计算机模拟结果证明，设计的电路具有正确的逻辑功能，且速度快，功耗低.
HUXiao-hui(胡晓慧) +1 more
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SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers
IEEE Access, 2023 Innovation and evolution are paramount where the demand for wideband, data-intensive connectivity is ever-increasing, and the only constant is change.
Jaco Du Preez +2 more
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168-195 GHz Power Amplifier With Output Power Larger Than 18 dBm in BiCMOS Technology
IEEE Access, 2020 This paper presents a 4-way combined G-band power amplifier (PA) fabricated with a 130-nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is designed at 185 GHz, which consists of three stages to get an overall gain and ...
Abdul Ali +5 more
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IEEE Photonics Journal, 2023 In this work, we present an O-band dual-polarization coherent receiver optical sub-assembly (cROSA), monolithically integrated in a 0.25 $\mu$m BiCMOS technology.
Pascal M. Seiler +7 more
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Sensors, 2019 This paper reviews the state of emerging transistor technologies capable of terahertz amplification, as well as the state of transistor modeling as required in terahertz electronic circuit research.
Mladen Božanić, Saurabh Sinha
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A SiGe 3-stage LNA for automotive radar application from 76 to 81 GHz [PDF]
ITM Web of Conferences, 2019 This paper presents the simulation results of the W-band 3-stage low noise amplifier which is designed in 0.13 μm SiGe BiCMOS technology. The LNA achieves a peak S21 of 24.1 dB and noise figure of 6 dB at 80 GHz with 3 dB bandwidth of 14 GHz from 73 to ...
Budnyaev Vadim, Vertegel Valeriy
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