Results 11 to 20 of about 13,901 (202)

Particularities of complex-functional monolithic integrated circuits post-layout simulation [PDF]

open access: yesITM Web of Conferences, 2019
This paper presents a silicon-based complex-functional monolithic microwave integrated circuits (MMICs) design methodology. Post-layout simulation stage particularities are discussed. Pre-tapeout functionality verification results of the C-band phase and
Filippov Ivan   +2 more
doaj   +1 more source

CMOS optical-sensor array with high output current levels and automatic signal-range centring [PDF]

open access: yes, 1994
A CMOS compatible photosensor with high output current levels, and an area-efficient scheme for automatic signal-range centring according to illumination conditions are presented.
Carmona Galán, Ricardo   +3 more
core   +1 more source

W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology [PDF]

open access: yesITM Web of Conferences, 2019
The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz.
Kozhemyakin Alexander, Kravchenko Ivan
doaj   +1 more source

Design of a 4.2-5.4 GHz Differential LC VCO using 0.35 m SiGe BiCMOS Technology [PDF]

open access: yes, 2006
In this paper, a 4.2-5.4 GHz, Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35´m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs).
Bozkurt, Ayhan   +7 more
core   +1 more source

Characterization of an embedded RF-MEMS switch [PDF]

open access: yes, 2010
An RF-MEMS capacitive switch for mm-wave integrated circuits, embedded in the BEOL of 0.25μm BiCMOS process, has been characterized. First, a mechanical model based on Finite-Element-Method (FEM) was developed by taking the residual stress of the thin ...
Ehwald, K. E.   +10 more
core   +1 more source

Design of patch active electronically scanned antenna for 5G communication system [PDF]

open access: yesITM Web of Conferences, 2019
The article deals with the research and design results of an active electronically scanned antenna (AESA) based on beamforming BiCMOS monolithic integrated circuit (MIC) and patch antenna radiators. The operating frequency band is sub-6 GHz.
Snegur Dmitriy, Schekaturin Andrey
doaj   +1 more source

Design of a tunable multi-band differential LC VCO using 0.35 mu m SiGe BiCMOS technology for multi-standard wireless communication systems [PDF]

open access: yes, 2009
In this paper, an integrated 2.2-5.7GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 mu m SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together
Bakkaloglu, Ahmet Kemal   +8 more
core   +1 more source

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

open access: yesIEEE Access, 2023
Innovation and evolution are paramount where the demand for wideband, data-intensive connectivity is ever-increasing, and the only constant is change.
Jaco Du Preez   +2 more
doaj   +1 more source

Time interleaved optical sampling for ultra-high speed A/D conversion [PDF]

open access: yes, 1998
A scheme is proposed for increasing the sampling rate of analogue-to-digital conversion by more than an order of magnitude by combining state-of-the-art A/D converters with photonic technology.
Koumans, R. G. M. P., Yariv, A.
core   +1 more source

A Flexible 0.18 $\mu{\rm m}$ BiCMOS Technology Suitable for Various Applications

open access: yesIEEE Journal of the Electron Devices Society, 2013
Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance.
Takashi Hashimoto   +9 more
doaj   +1 more source

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