A Synthetic Ultra-Wideband Transceiver for Millimeter-Wave Imaging Applications [PDF]
Micromachines, 2023 In this work, we present a transceiver front-end in SiGe BiCMOS technology that can provide an ultra-wide bandwidth of 100 GHz at millimeter-wave frequencies.
Amir Mirbeik +2 more
doaj +2 more sources
A Wideband Cryogenic Readout Amplifier with Temperature-Insensitive Gain for SNSPD [PDF]
Sensors, 2022 This paper presents a temperature-insensitive wideband cryogenic amplifier for superconducting nanowire single-photon detectors (SNSPD). With a proposed folded diode-connected transistor load to realize a good device-tracking feature, the theoretical ...
Xiaokang Niu +3 more
doaj +2 more sources
A 24-to-30 GHz Ultra-High-Linearity Down-Conversion Mixer for 5G Applications Using a New Linearization Method [PDF]
Sensors, 2022 The linearity of active mixers is usually determined by the input transistors, and many works have been proposed to improve it by modified input stages at the cost of a more complex structure or more power consumption.
Shenghui Yang +4 more
doaj +2 more sources
Sub-terahertz feedback interferometry and imaging with emitters in 130 nm BiCMOS technology [PDF]
Scientific Reports, 2023 In this work, we present the effect of self-mixing in compact terahertz emitters implemented in a 130 nm SiGe BiCMOS technology. The devices are based on a differential Colpitts oscillator topology with optimized emission frequency at the fundamental ...
Dmytro B. But +6 more
doaj +2 more sources
A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers [PDF]
Micromachines, 2023 This paper presents a novel and compact vector modulator (VM) architecture implemented in 130 nm SiGe BiCMOS technology. The design is suitable for use in receive phased arrays for the gateways of major low Earth orbit (LEO) constellations that operate ...
Javier del Pino +6 more
doaj +2 more sources
A 90–100 GHz SiGe BiCMOS 6-Bit Digital Phase Shifter with a Coupler-Based 180° Unit for Phased Arrays [PDF]
MicromachinesThis paper presents a 90–100 GHz wideband digital phase shifter with a fine resolution of 5.625°, implemented in a 0.13 μm SiGe BiCMOS process. A switch-type architecture with six cascaded units, including a novel 180° cell based on a broadband coupler ...
Hongchang Shen +7 more
doaj +2 more sources
Gain enhancement of BiCMOS on-chip sub-THz antennas by mean of meta-cells [PDF]
Scientific Reports, 2022 A MM-loaded sub-THz on-chip antenna with a narrow beamwidth, 9 dB gain and a simulated peak efficiency of 76% at the center frequency of 300 GHz is presented.
Matteo Stocchi +10 more
doaj +2 more sources
Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking [PDF]
Sensors, 2023 In this work, the design of a wideband low-noise amplifier (LNA) using a resistive feedback network is proposed for potential multi-band sensing, communication, and radar applications.
Ickhyun Song +4 more
doaj +2 more sources
A 0.049 mm2 0.5-to-5.8 GHz LNA Achieving a Flat High Gain Based on an Active Inductor and Low Capacitive ESD Protection [PDF]
MicromachinesThis paper introduces a 0.5–5.8 GHz low-noise amplifier (LNA) incorporating a gyrator-C-based active inductor (AI) and an enhanced deep trench isolation (DTI) electrostatic discharge (ESD) diode.
Dawei Dong +6 more
doaj +2 more sources
A 26–28 GHz, Two-Stage, Low-Noise Amplifier for Fifth-Generation Radio Frequency and Millimeter-Wave Applications [PDF]
SensorsThis paper presents a high-gain low-noise amplifier (LNA) operating at the 5G mm-wave band. The full design combines two conventional cascode stages: common base (CB) and common emitter (CS).
Aymen Ben Hammadi +3 more
doaj +2 more sources