Results 41 to 50 of about 6,460 (218)

The W-Si High Precision Preshower Detector of the FASER Experiment at the LHC [PDF]

open access: yesEPJ Web of Conferences
FASER is searching for light, weakly-interacting particles at the Large Hadron Collider. The first search for Axion-like particles (ALPs) decaying to a photon pair using data collected in 2022 and 2023 was performed and successfully excluded regions not ...
Hayakawa Daiki
doaj   +1 more source

A 160Gb/s (4x40) WDM O-band Tx subassembly using a 4-ch array of silicon rings co-packaged with a SiGe BiCMOS IC driver [PDF]

open access: yes, 2019
We present a 400 (8×50) Gb/s-capable RM-based Si-photonic WDM O-band TxRx with 1.17nm channel spacing for high-speed optical interconnects and demonstrate successful 50Gb/s-NRZ TxRx operation achieving a ~4.5dB Tx extinction ratio under 2.15Vpp ...
Alexoudi, T.   +13 more
core   +2 more sources

The Method of Bandwidth Extension of SiGe BiCMOS Microwave Variable-Gain Amplifier Integrated Circuit

open access: yesVìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ, 2017
The article proposes a method of bandwidth extension of the analog integrated circuit of the variable-gain amplifier (VGA) based on SiGe BiCMOS technology with the rules of 0.18 µm. The designed VGA has a linear (in dB) control characteristic.
E. M. Savchenko   +3 more
doaj   +1 more source

A low power 2 x 28 Gb/s electroabsorption modulator driver array with on-chip duobinary encoding [PDF]

open access: yes, 2014
An integrated 2 x 28 Gb/s dual-channel duobinary driver IC is presented. Each channel has integrated coding blocks, transforming a non-return-to-zero input signal into a 3-level electrical duobinary signal to achieve an optical duobinary modulation.
Bauwelinck, Johan   +6 more
core   +2 more sources

Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz

open access: yesIEEE Access, 2021
This paper presents a transmitter (TX) and a receiver (RX) with bowtie-antenna and silicon lens for gas spectroscopy at 222-270 GHz, which are fabricated in IHP’s $0.13~\mu \text{m}$ SiGe BiCMOS technology. The TX and RX use two integrated local
Klaus Schmalz   +7 more
doaj   +1 more source

A Spectral-Scanning Magnetic Resonance Imaging (MRI) Integrated System [PDF]

open access: yes, 2008
An integrated spectral-scanning magnetic resonance imaging (MRI) technique is implemented in a 0.12μm SiGe BiCMOS process. This system is designed for small-scale MRI applications with non-uniform and low magnetic fields.
Babakhani, Aydin   +2 more
core   +1 more source

Cryogenic W-Band SiGe BiCMOS Low-Noise Amplifier

open access: yes2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020
In this paper we present the design, modeling, and on-wafer measurement results of an ultra- wideband cryogenically cooled SiGe low-noise amplifier covering at least 71 to 116 GHz. When cryogenically cooled to 20 K and measured on wafer the SiGe amplifier shows 95-116-K noise temperature from 77 to 116 GHz.
Sheikhipoor, Nima   +7 more
openaire   +2 more sources

Transmitter and Receiver in 0.13 μm SiGe for Gas Spectroscopy at 222–270/444–540 GHz

open access: yesIEEE Journal of Microwaves, 2022
This paper presents a transmitter (TX) and a receiver (RX) with a cross-polarized bowtie-antenna on a silicon lens for gas spectroscopy at 222–270 GHz and the doubled frequency at 444–540 GHz. TX and RX are fabricated in 0.13 μm SiGe
Klaus Schmalz   +5 more
doaj   +1 more source

A 24-GHz SiGe Phased-Array Receiver—LO Phase-Shifting Approach [PDF]

open access: yes, 2005
A local-oscillator phase-shifting approach is introduced to implement a fully integrated 24-GHz phased-array receiver using an SiGe technology. Sixteen phases of the local oscillator are generated in one oscillator core, resulting in a raw beam-forming ...
Guan, Xiang   +3 more
core   +1 more source

Design of a 0.13 µm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product [PDF]

open access: yesAdvances in Radio Science, 2017
This paper presents the design of a limiting amplifier with 1-to-3 fan-out implementation in a 0.13 µm SiGe BiCMOS technology and gives a detailed guideline to determine the circuit parameters of the amplifier for optimum high-frequency performance ...
S. Park   +3 more
doaj   +1 more source

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