Results 31 to 40 of about 6,460 (218)
SiGe HBT Technology Based on a 0.13-
IEEE Journal of the Electron Devices Society, 2014 A self-aligned SiGe HBT technology achieving a cutoff frequency (fT) of 253 GHz was developed using a selective SiGe epitaxial growth process. Germanium concentration in an i-SiGe layer just under a p+ intrinsic base region was raised to 27.4% to improve
Takashi Hashimoto +7 more
doaj +1 more source
Advanced Electronic Materials, Volume 8, Issue 7, July 2022., 2022 Modern communication systems make extensive use of multilayered monolithic microwave integrated circuits for realizing various functions. A fabrication strategy to produce flexible microwave integrated circuits with state‐of‐the‐art high‐frequency performance is reported, which can be of broad use for enabling wireless connectivity in the next ...
Guoxuan Qin +7 more
wiley +1 more source
Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications [PDF]
, 2007 In this paper, a 4.2-5.4 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mu m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs ...
Bozkurt, Ayhan +3 more
core +1 more source
SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers [PDF]
, 2008 We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers (LNAs) implemented in a commercially-available 130 nm SiGe BiCMOS platform.
Bardin, Joseph C. +7 more
core +1 more source
A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array
IEEE Access, 2020 In this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a ...
Hua Zhu +3 more
doaj +1 more source
Journal of Telecommunications and Information Technology, 2000 The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the
Steve Hall, Bill Eccleston
doaj +1 more source
Frontiers in Physics, 2014 This paper presents as a novelty a fully monolithically integrated 10Gb/s silicon modulator consisting of an electrical driver plus optical phase modulator in 0.25µm SiGe:C BiCMOS technology on one chip, where instead of a SOI CMOS process (only MOS ...
Bernhard eGoll +9 more
doaj +1 more source
SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers
IEEE Access, 2023 Innovation and evolution are paramount where the demand for wideband, data-intensive connectivity is ever-increasing, and the only constant is change.
Jaco Du Preez +2 more
doaj +1 more source
A Breakdown Voltage Multiplier for High Voltage Swing Drivers [PDF]
, 2007 A novel breakdown voltage (BV) multiplier is introduced that makes it possible to generate high output voltage swings using transistors with low breakdown voltages. The timing analysis of the stage is used to optimize its dynamic response.
Hajimiri, Ali, Mandegaran, Sam
core +1 more source
Design of a 2 GHz Linear-in-dB Variable-Gain Amplifier with 80-dB Gain Range
Active and Passive Electronic Components, 2014 A broadband linear-in-dB variable-gain amplifier (VGA) circuit is implemented in 0.18 μm SiGe BiCMOS process. The VGA comprises two cascaded variable-gain core, in which a hybrid current-steering current gain cell is inserted in the Cherry-Hooper ...
Zhengyu Sun, Yuepeng Yan
doaj +1 more source