A D‐band quadrature‐hybrids‐based 5‐bit vector‐modulated phase shifter with low RMS phase error
Electronics Letters, 2022 This letter presents a D‐band 5‐bit vector‐modulated phase shifter based on quadrature hybrids for D‐band phased arrays. The proposed vector‐modulated phase shifter employs two stages of quadrature hybrid followed with a single‐pole double‐throw switch ...
Zhenyi Zhang +3 more
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A High Dynamic Range and Fast Response Logarithmic Amplifier Employing Slope-Adjustment and Power-Down Mode [PDF]
MicromachinesBased on the GSMC 180 nm SiGe BiCMOS process, a parallel-summation logarithmic amplifier is presented in this paper. The logarithmic amplifier adopts a cascaded structure of nine-stage fully-differential limiting amplifiers (LA) to achieve high dynamic ...
Yanhu Wang +5 more
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A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process [PDF]
MicromachinesThis paper introduces a high-gain wideband power amplifier (PA) designed for V-band applications, operating across 52 to 65 GHz. The proposed PA design employs a combination of techniques, including pole-gain distribution, base-capacitive peaking, and ...
Jianing Hu +4 more
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A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process [PDF]
MicromachinesThis paper presents a compact V-band low-noise amplifier (LNA) featuring temperature compensation, implemented in a 130 nm SiGe BiCMOS process. A negative temperature coefficient bias circuit generates an adaptive current for temperature compensation ...
Yi Shen +4 more
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SiGe HBT wideband amplifier for millimeter wave applications
Journal of Telecommunications and Information Technology, 2023 A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz.
Marco Krˇcmar +2 more
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Particularities of complex-functional monolithic integrated circuits post-layout simulation [PDF]
ITM Web of Conferences, 2019 This paper presents a silicon-based complex-functional monolithic microwave integrated circuits (MMICs) design methodology. Post-layout simulation stage particularities are discussed. Pre-tapeout functionality verification results of the C-band phase and
Filippov Ivan +2 more
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A SiGe BiCMOS Amplifier-Frequency Doubler Chain Operating for 284–328 GHz [PDF]
Journal of Electromagnetic Engineering and Science, 2022 This work describes the development of an amplifier frequency doubler chain (AFDC) operating at around 300 GHz based on SiGe BiCMOS technology.
Junghwan Yoo +4 more
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Design investigation to improve voltage swing and bandwidth of the SiGe driver circuit for a silicon electro-optic ring modulator [PDF]
Advances in Radio Science, 2015 This paper reports on a new SiGe driver IC to address the low breakdown voltage level of modern BiCMOS transistors. An optical modulator driver IC in SiGe 250 nm technology with a supply voltage of 4.5 V is presented.
A. Fatemi, H. Gaul, U. Keil, H. Klar
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W-band voltage-controlled oscillator design in 130 nm SiGe BiCMOS technology [PDF]
ITM Web of Conferences, 2019 The paper presents design flow and simulation results of the W-band fundamental voltage-controlled oscillator in 0.13 μm SiGe BiCMOS technology for an automotive radar application. Oscillator provides fundamental oscillation range of 76.8 GHz to 81.2 GHz.
Kozhemyakin Alexander, Kravchenko Ivan
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IEEE Journal of the Electron Devices Society, 2023 We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature.
Edmundo A. Gutierrez-D. +2 more
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