Results 21 to 30 of about 6,460 (218)

A SiGe 3-stage LNA for automotive radar application from 76 to 81 GHz [PDF]

ITM Web of Conferences, 2019
This paper presents the simulation results of the W-band 3-stage low noise amplifier which is designed in 0.13 μm SiGe BiCMOS technology. The LNA achieves a peak S21 of 24.1 dB and noise figure of 6 dB at 80 GHz with 3 dB bandwidth of 14 GHz from 73 to ...
Budnyaev Vadim, Vertegel Valeriy
doaj   +1 more source

168-195 GHz Power Amplifier With Output Power Larger Than 18 dBm in BiCMOS Technology

IEEE Access, 2020
This paper presents a 4-way combined G-band power amplifier (PA) fabricated with a 130-nm SiGe BiCMOS process. First, a single-ended PA based on the cascode topology (CT) is designed at 185 GHz, which consists of three stages to get an overall gain and ...
Abdul Ali, Jongwon Yun, Franco Giannini, Herman Jalli Ng, Dietmar Kissinger, Paolo Colantonio   +5 more
doaj   +1 more source

Integrated superregenerative amplifier based 24 GHz frequency modulated continuous wave radar active reflector tags for joint ranging and communication

IET Radar, Sonar &Navigation, Volume 17, Issue 8, Page 1196-1212, August 2023., 2023
This work reports concepts for two cooperative active reflector tags (ARTs) for joint ranging and communication in a linear frequency modulated continuous wave secondary radar system along with corresponding theoretical derivations. The two low power, sensor enabled ARTs feature roll invariance and are based on 24 GHz integrated superregenerative ...
Manu Viswambharan Thayyil, Adrian Figueroa, Niko Joram, Frank Ellinger   +3 more
wiley   +1 more source

A Flexible 0.18 $\mu{\rm m}$ BiCMOS Technology Suitable for Various Applications

IEEE Journal of the Electron Devices Society, 2013
Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance.
Takashi Hashimoto, Yusuke Nonaka, Tatsuya Tominari, Tsuyoshi Fujiwara, Tsutomu Udo, Hidenori Satoh, Kunihiko Watanabe, Tomoko Jimbo, Hiromi Shimamoto, Satoru Isomura   +9 more
doaj   +1 more source

SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

IEEE Journal of Microwaves, 2021
This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO.
Thomas Zimmer, Josef Bock, Fred Buchali, Pascal Chevalier, Michael Collisi, Bjorn Debaillie, Marina Deng, Philippe Ferrari, Sebastien Fregonese, Christophe Gaquiere, Haitham Ghanem, Horst Hettrich, Alper Karakuzulu, Tim Maiwald, Marc Margalef-Rovira, Caroline Maye, Michael Moller, Anindya Mukherjee, Holger Rucker, Paulius Sakalas, Rolf Schmid, Karina Disch, Karsten Schuh, Wolfgang Templ, Akshay Visweswaran, Thomas Zwick   +25 more
doaj   +1 more source

Polarization‐Tuned Fano Resonances in All‐Dielectric Short‐Wave Infrared Metasurface

Advanced Materials, Volume 35, Issue 28, July 13, 2023., 2023
A Si/Ge0.90Sn0.10 core/shell metasurface is developed to harness Fano resonance in the short‐wave infrared spectral range. This resonance exploits the efficient coupling between the electric and magnetic dipoles, which is modulated with the incident light polarization.
Anis Attiaoui, Gérard Daligou, Simone Assali, Oliver Skibitzki, Thomas Schroeder, Oussama Moutanabbir   +5 more
wiley   +1 more source

Design of a 4.2-5.4 GHz Differential LC VCO using 0.35 m SiGe BiCMOS Technology [PDF]

, 2006
In this paper, a 4.2-5.4 GHz, Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35´m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs).
Bozkurt, Ayhan, Esame, İbrahim Onur, Esame, Ibrahim Onur, Gurbuz, Yasar, Gürbüz, Yaşar, Kuntman, Ayten., Tekin, İbrahim, Tekin, Ibrahim   +7 more
core   +1 more source

120‐GHz 2‐bit reflection‐type phase shifter based on PIN diodes switched‐lines

Electronics Letters, Volume 59, Issue 10, May 2023., 2023
In this paper, a 2‐bit digital reflection‐type phase shifter working at 120 GHz is presented. It uses a compact coupled‐lines coupler with low insertion loss and high isolation over a wide bandwidth. The loads are made by a microstrip‐line loaded by three PN jonction separated by an intermediate region I (PIN) diodes whose states are tuned ON/OFF to ...
David Ouattara, Cédric Durand, Sylvain Bourdel, Frédéric Paillardet, Loic Vincent, Jordan Corsi, Philippe Ferrari   +6 more
wiley   +1 more source

Design of linear low-noise amplifier for 802.11ac based on SiGe BiCMOS technology

Dianzi Jishu Yingyong, 2018
This paper presents a 802.11ac low-noise amplifier with bypass function integrated in 0.36 μm SiGe BiCMOS process. In order to meet the specifications of the criteria, the methods for optimizing noise, power gain and stability were given.
Wei Qidi, Lin Junming, Zhang Guohao, Chen Liang   +3 more
doaj   +1 more source

Design of a tunable multi-band differential LC VCO using 0.35 mu m SiGe BiCMOS technology for multi-standard wireless communication systems [PDF]

, 2009
In this paper, an integrated 2.2-5.7GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 mu m SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together
Bakkaloglu, Ahmet Kemal, Bakkaloğlu, Ahmet Kemal, Ergintav, Arzu, Gurbuz, Yasar, Gürbüz, Yaşar, Ozeren, Emre, Tekin, İbrahim, Tekin, Ibrahim, Özeren, Emre   +8 more
core   +1 more source