Results 51 to 60 of about 6,460 (218)
2.5 V 35 dBm IIP3 75 MHz sixth-order active RC filter [PDF]
A
Bauwelinck, Johan +7 more
core +2 more sources
A new resonant circuit for 2.45 GHz LC VCO with linear frequency tuning [PDF]
A new MOS varactor bank is proposed to implement a 2.45 GHz SiGe BiCMOS LC-tank voltage controlled oscillator (VCO) with linear frequency tuning. Compared to a conventional VCO, the proposed technique improves the quality factor of the LC-tank while ...
Dinc, Tolga +6 more
core
A 23 GHz Active Mixer with Integrated Diode Linearizer in SiGe BiCMOS Technology [PDF]
Active mixers operating at 23 GHz are designed and fabricated in SiGe technology.An integrated diode linearizer is used to improve the linearity of the mixer.Measurement and simulation show excellent agreement.Typically,10 dB double-sideband noise figure,
Bao, Mingquan +2 more
core +1 more source
A 130‐nm SiGe BiCMOS On‐Chip Diplexer With High‐Q Inductors for K/Ka‐Band Applications
This paper presents a high‐performance on‐chip diplexer designed for K/Ka‐band applications, fabricated via 130‐nm SiGe BiCMOS across two distinct frequency bands: 17–21 and 27–31 GHz. A localized backside etching (LBE) technique is employed to create air cavities beneath the inductors, a method that fundamentally mitigates substrate‐related losses and
Francesco Greco +10 more
wiley +1 more source
Thermal Modeling of 3-D Stacked DRAM Over SiGe HBT BiCMOS CPU
We have previously evaluated the feasibility of a serial code accelerator core with 3-D DRAM stacked on the core operating at high frequencies. While operating at such high frequencies (>24 GHz), there are concerns with removing heat from the 3-D ...
Ryan Clarke +9 more
doaj +1 more source
This paper presents challenges and design perspectives for terahertz (THz) integrated circuits and systems. THz means different things to different people.
Payam Heydari
doaj +1 more source
DSP-free and real-time NRZ transmission of 50Gb/s over 15km SSMF and 64Gb/s back-to-back with a 1.3um VCSEL [PDF]
We demonstrate and analyze 50 Gb/s non-return-to-zero (NRZ) transmission over 15 km of standard single-mode fiber (SSMF), 60-Gb/s NRZ transmission over 5 km of SSMF and up to 64-Gb/s NRZ back-to-back using a directly modulated short-cavity long ...
Bauwelinck, Johan +8 more
core +1 more source
Demonstration of a Graphene Adjustable‐Barriers Phototransistor with Tunable Ultra‐High Responsivity
A novel graphene‐based phototransistor with a tunable ultra‐high responsivity of 1.7 x 107 AW−1 has been demonstrated. Due to the selected material combination of amorphous silicon, graphene and n‐germanium, the device is potentially capable of dual‐band detection in the VIS‐IR range.
Carsten Strobel +5 more
wiley +1 more source
Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits
Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS)
Kwang-Jow Gan +4 more
doaj +1 more source
FIGURE 1. Comparison between the proposed method and prior state‐of‐the‐art: (a) TR vs. frequency; (b) FOMT vs. frequency. FIGURE 2. Comparison between the proposed method and prior art: (a) FOMTA vs. frequency; (b) TR vs. area. These designs showcase the versatility and efficiency of the two‐mode current‐starved delay architecture, which offers wide ...
Chaowei Yang +5 more
wiley +1 more source

