Results 41 to 50 of about 467 (179)
Electronics Letters, Volume 61, Issue 1, January/December 2025.This letter presents the first demonstration of laser induced deep etching technology (LIDE) for fabricating highly precise antennas designed for sub‐THz applications. Specifically, it details the design, fabrication, and measurement of two antenna prototypes: a single rectangular dielectric resonator antenna (RDRA) and a 4×$\times$4 RDRA array.
Elizabeth Bekker +6 more
wiley +1 more source
, 2022 International audience ; This chapter describes tunable circuits in CMOS and BiCMOS technologies. First, active and passive basic components are briefly described: MOS and bipolar transistors, and passive components like MOM capacitors, and transmission lines.
Ferrari, Philippe +3 more
openaire +1 more source
A Cascode Pair Based on SiGe HPT for RoF/LiFi Applications
Electronics Letters, Volume 61, Issue 1, January/December 2025.In this letter, a Si/SiGe phototransistor fully integrated in an industrial 55‐nm node BiCMOS technology is incorporated in a cascode pair for high‐speed photodetection. After having presented the phototranistor structure, the opto‐microwave performances are discussed and compared with a single stage phototransistor.
Thary Valentin +3 more
wiley +1 more source
Coupled-Lines Modeling and Design in (Bi)CMOS Technologies
IEEE Journal of MicrowavesThis article establishes a systematic modeling and design methodology for incorporating coupled-lines (Clines) structures into standard CMOS/BiCMOS design flows.
Joao E. Gentil Le +6 more
doaj +1 more source
A Programmable Gain Amplifier With Temperature Compensation for Hall Sensor
Electronics Letters, Volume 61, Issue 1, January/December 2025.This work presents a high‐performance programmable gain amplifier (PGA) incorporating advanced temperature compensation technology. The proposed compensation scheme achieves remarkable thermal stability, maintaining sensitivity drift below 0.3% across an extended temperature range from −40°C to 140°C.
Kaixin Fan +5 more
wiley +1 more source
Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits
Photonics, 2018 In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date.
Minoru Fujishima
doaj +1 more source
Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components
IET Microwaves, Antennas & Propagation, 2022 In this paper, the slow‐wave coplanar stripline (S‐CPS) technology is utilised to design high performance and small footprint resonators operating within the millimetre‐wave band from 50 to 80 GHz.
Abdelhalim A. Saadi +6 more
doaj +1 more source
A 18‐36 GHz Noise Cancelling Low‐Noise Amplifier With 2.9 dB NF in 130 nm SiGe BiCMOS
Electronics Letters, Volume 61, Issue 1, January/December 2025.This paper presents a broadband noise‐canceling low‐noise amplifier (LNA) implemented in a 130‐nm SiGe BiCMOS process. The first stage employs a parallel architecture, combining a common‐base amplifier with a resistive feedback common‐emitter amplifier, to achieve noise cancellation.
Wenyan lyu +5 more
wiley +1 more source
The W-Si High Precision Preshower Detector of the FASER Experiment at the LHC [PDF]
EPJ Web of ConferencesFASER is searching for light, weakly-interacting particles at the Large Hadron Collider. The first search for Axion-like particles (ALPs) decaying to a photon pair using data collected in 2022 and 2023 was performed and successfully excluded regions not ...
Hayakawa Daiki
doaj +1 more source
An Ultra‐Wideband Low Noise Colpitts VCO Using SiGe Bi‐CMOS Technology
The Journal of Engineering, Volume 2025, Issue 1, January/December 2025.This paper proposes a wideband voltage‐controlled oscillator (VCO) circuit based on the Colpitts oscillator structure. By employing amplifiers, frequency multipliers, and other techniques to process the output signal, an ultra‐wideband frequency tuning range can be achieved.
PeiYing Cai +4 more
wiley +1 more source