Results 41 to 50 of about 7,247 (218)
IEEE Journal of the Electron Devices Society, 2023 We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature.
Edmundo A. Gutierrez-D. +2 more
doaj +1 more source
, 2023 Currently, commercial radar systems are mainly found in the E-band. However, higher frequencies offer significant advantages in terms of absolute bandwidth and system design.
David Starke (17379985) +5 more
core +1 more source
, 2022 S.13-25In diesem Beitrag werden die Grundlagen der gemischten Bipolar-CMOS-(BiCMOS)-Schaltungstechnik dargestellt. Ausgehend von der Beschreibung der Eigenschaften des Bipolar- und MOS-Transistors, werden analoge und digitale Schaltungen erläutert, von ...
Hosticka, Bedrich J.
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Design and applications of tunable analog BiCMOS circuits
, 2022 S.1101 - 1104In this communication we discuss the design, merits, and applications of tunable analog BiCMOS circuits. Although the BiCMOS technology offers higher design flexibility due to the presence of more types of active devices than the standard ...
Hosticka, Bedrich J. +2 more
core +2 more sources
Design investigation to improve voltage swing and bandwidth of the SiGe driver circuit for a silicon electro-optic ring modulator [PDF]
Advances in Radio Science, 2015 This paper reports on a new SiGe driver IC to address the low breakdown voltage level of modern BiCMOS transistors. An optical modulator driver IC in SiGe 250 nm technology with a supply voltage of 4.5 V is presented.
A. Fatemi, H. Gaul, U. Keil, H. Klar
doaj +1 more source
Konzepte für digitale Multiplizierer in BICMOS Technik
, 2022 S.33-39Dieser Beitrag beschäftigt sich mit dem Entwurf digitaler Multipliziererkonzepte in BiCMOS-Technik. Am Beispiel des Booth Multiplizierers wird der Einsatz schneller BiCMOS-Schaltungen ausführlich diskutiert.
Eßer, W., Schardein, W., Rothermel, A.
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BiCMOS, technology and circuit design
, 2022 S.505-531In this paper, the state-of-the art of combined bipolar/CMOS (BiCMOS) technologies and circuit techniques is described. Examples of advanced BiCMOS technologies for various applications will be given, together with theoretical considerations ...
Schardein, W. +4 more
core +1 more source
Journal of Telecommunications and Information Technology, 2000 The paper describes recent progress for the introduction of silicon-germanium, bipolar and field effect heterostructure transistors into mainstream integrated circuit application. Basic underlying concepts and device architectures which give rise to the
Steve Hall, Bill Eccleston
doaj +1 more source
Analysis and Design of a DC‐to‐24 GHz Compact High‐Speed Inductor‐less SPDT Switch
Electronics Letters, Volume 62, Issue 1, January/December 2026.ABSTRACT A compact DC‐to‐24 GHz single‐pole, double‐throw switch with enhanced isolation, low insertion loss and high‐speed performance, by adopting a multiple series‐shunt structure, has been presented in this letter. The mechanism of multiple series‐shunt structures of the switch on isolation and insertion loss are analysed. To verify the feasibility,
Jiashu Guo +3 more
wiley +1 more source
Fabrication And Electrical Characterization Of Silicon Bipolar Transistors In A O.5µm Based BiCMOS Technology. [PDF]
, 2000 Bipolar transistors are well known for its high current driving capability and current gains, while CMOS transistors are dominant in the integrated circuit market because of its low power consumption and small size advantage.
Abdul Wahab, Mohd. Zahrin +7 more
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