Results 61 to 70 of about 8,888 (167)
The W-Si High Precision Preshower Detector of the FASER Experiment at the LHC [PDF]
FASER is searching for light, weakly-interacting particles at the Large Hadron Collider. The first search for Axion-like particles (ALPs) decaying to a photon pair using data collected in 2022 and 2023 was performed and successfully excluded regions not ...
Hayakawa Daiki
doaj +1 more source
FIGURE 1. Comparison between the proposed method and prior state‐of‐the‐art: (a) TR vs. frequency; (b) FOMT vs. frequency. FIGURE 2. Comparison between the proposed method and prior art: (a) FOMTA vs. frequency; (b) TR vs. area. These designs showcase the versatility and efficiency of the two‐mode current‐starved delay architecture, which offers wide ...
Chaowei Yang +5 more
wiley +1 more source
This work details the design and characterization of a wideband on-chip dual-polarized double-slot antenna for sub-THz frequencies, integrated in SiGe-BiCMOS technology.
Alexandros Bechrakis Triantafyllos +5 more
doaj +1 more source
A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array
In this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a ...
Hua Zhu +3 more
doaj +1 more source
This letter presents the first demonstration of laser induced deep etching technology (LIDE) for fabricating highly precise antennas designed for sub‐THz applications. Specifically, it details the design, fabrication, and measurement of two antenna prototypes: a single rectangular dielectric resonator antenna (RDRA) and a 4×$\times$4 RDRA array.
Elizabeth Bekker +6 more
wiley +1 more source
100 MHz current generator with T/(T − t) time waveform in 0.35 μm BiCMOS technology
A 0.35 μm BiCMOS current generator suitable for optical quantum random number generators is presented. The time dependence of the current pulses is of the form T/(T − t).
N. Tadić, B. Goll, H. Zimmermann
doaj +1 more source
A Cascode Pair Based on SiGe HPT for RoF/LiFi Applications
In this letter, a Si/SiGe phototransistor fully integrated in an industrial 55‐nm node BiCMOS technology is incorporated in a cascode pair for high‐speed photodetection. After having presented the phototranistor structure, the opto‐microwave performances are discussed and compared with a single stage phototransistor.
Thary Valentin +3 more
wiley +1 more source
Design considerations of high voltage RESURF nLDMOS: An analytical and numerical study
In this paper, a RESURF high voltage (HV) nLDMOS is designed in 0.35 μm BiCMOS technology (STMicroelectronics technology-like). Optimization of the key device/process parameters of the device is performed using analytical approach and verified using ...
Mohamed Abouelatta-Ebrahim +4 more
doaj +1 more source
A Programmable Gain Amplifier With Temperature Compensation for Hall Sensor
This work presents a high‐performance programmable gain amplifier (PGA) incorporating advanced temperature compensation technology. The proposed compensation scheme achieves remarkable thermal stability, maintaining sensitivity drift below 0.3% across an extended temperature range from −40°C to 140°C.
Kaixin Fan +5 more
wiley +1 more source
A 18‐36 GHz Noise Cancelling Low‐Noise Amplifier With 2.9 dB NF in 130 nm SiGe BiCMOS
This paper presents a broadband noise‐canceling low‐noise amplifier (LNA) implemented in a 130‐nm SiGe BiCMOS process. The first stage employs a parallel architecture, combining a common‐base amplifier with a resistive feedback common‐emitter amplifier, to achieve noise cancellation.
Wenyan lyu +5 more
wiley +1 more source

