Results 61 to 70 of about 467 (179)

The Method of Bandwidth Extension of SiGe BiCMOS Microwave Variable-Gain Amplifier Integrated Circuit

Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ, 2017
The article proposes a method of bandwidth extension of the analog integrated circuit of the variable-gain amplifier (VGA) based on SiGe BiCMOS technology with the rules of 0.18 µm. The designed VGA has a linear (in dB) control characteristic.
E. M. Savchenko, A. S. Budiakov, P. S. Budiakov, N. N. Prokopenko   +3 more
doaj   +1 more source

Transceiver Design for Multiband OFDM UWB

EURASIP Journal on Wireless Communications and Networking, 2006
Ultra-wideband (UWB) is an emerging broadband wireless technology enabling data rates up to 480 Mbps. This paper provides an overview of recent design approaches for several circuit functions that are required for the implementation of ...
Leenaerts DMW
doaj   +2 more sources

BiCMOS DCVSL gate

Electronics Letters, 1991
A BiCMOS differential cascode voltage switch logic (DCVSL) gate is presented. The circuit consists of a CMOS differential logic circuit and a bipolar differential sense pair. The result is a high speed CMOS to ECL conversion circuit with relatively high logic density.
S. Liang, D.H.K. Hoe, C.A.T. Salama
openaire   +1 more source

High speed wide band programmable frequency divider for JESD204B/C

Dianzi Jishu Yingyong
In order to meet the application requirements of JESD204B/C system in high-speed multi-channel scenarios, a programmable frequency divider with high speed and wide operating frequency is designed by using current mode logic (CML).
Jiang Chenyang, Yang Junhao, Wang Baikang, Jiang Yingdan   +3 more
doaj   +1 more source

Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits

Engineering Science and Technology, an International Journal, 2016
Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS)
Kwang-Jow Gan, Jeng-Jong Lu, Wen-Kuan Yeh, Yaw-Hwang Chen, Yan-Wun Chen   +4 more
doaj   +1 more source

High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane

npj Flexible Electronics, 2017
Electronics: Microfabrication enables integrated silicon-based thin-film transistors Semiconductor-based thin-film electronics is an emerging field in modern electronics due to the advance in mechanical flexibility, yet the fabrication that is currently ...
Jung-Hun Seo, Kan Zhang, Munho Kim, Weidong Zhou, Zhenqiang Ma   +4 more
doaj   +1 more source

Establishing On-Wafer Calibration Standards for the 16-Term Error Model: Application to Silicon High-Frequency Transistor Characterization

IEEE Journal of Microwaves
This work focuses on a novel methodology to establish on-wafer calibration standards for the 16-Term Error Calibration Technique. It combines TRL-calibrated data with EM simulation to precisely generate S-parameters of standards.
Sebastien Fregonese, Thomas Zimmer
doaj   +1 more source

Analysis and Implementation of Controlled Semiconductor Switch for Ultra-Wideband Radar Sensor Applications. [PDF]

Sensors (Basel), 2023
Jurik P, Sokol M, Galajda P, Drutarovsky M.   +3 more
europepmc   +1 more source

Sub-terahertz feedback interferometry and imaging with emitters in 130 nm BiCMOS technology. [PDF]

Sci Rep, 2023
But DB, Ikamas K, Kołaciński C, Chernyadiev AV, Vizbaras D, Knap W, Lisauskas A.   +6 more
europepmc   +1 more source

A 17.8-20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers. [PDF]

Micromachines (Basel), 2023
Del Pino J, Khemchandani SL, San-Miguel-Montesdeoca M, Mateos-Angulo S, Mayor-Duarte D, Saiz-Perez JL, Galante-Sempere D.   +6 more
europepmc   +1 more source