Results 81 to 90 of about 7,247 (218)
Morphological Relaxation of Strained Epitaxial Films for Stripe‐Geometry Devices
Advanced Materials Technologies, Volume 9, Issue 4, February 19, 2024.A new morphological evolution describing the relaxation of a strained epitaxial film deposited on a pattern with a stripe geometry is reported, paradigmatic of 2D like systems, and characteristic of transistors channels geometry. Both the elastic equation and surface diffusion equation are analytically solved, and reveal the different resulting ...
Kennet D. R. Hannikainen +4 more
wiley +1 more source
Analog 2:1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology
We report on a 2:1 analog multiplexer (AMUX) circuit in 130-nm SiGe BiCMOS technology. The technology offers HBTs with peak fT of 470 GHz and fmax of 650 GHz.
Grözing, Markus +9 more
core +1 more source
Electronics Letters, Volume 60, Issue 2, January 2024.Abstract A 19‐GHz low‐phase‐noise PLL‐frequency synthesizer is presented in this letter that is intended to be used in a K‐band FMCW radar which requires strict phase noise for detecting a small unmanned aerial vehicle. The 17.9 to 19.5‐GHz PLL includes a Darlington cross‐coupled capacitive‐degeneration VCO which presents higher maximum attainable ...
Jayol Lee, Kyung Hwan Park, Bon Tae Koo
wiley +1 more source
High-Speed SiGe BiCMOS Technologies and Circuits
, 2017 This work reports on the development of SiGe-BiCMOS technologies for mm-wave and THz high frequency applications. We present state-of-the-art performances for different SiGe heterojunction bipolar transistor (SiGe-HBT) developments as well as the ...
A. Mai +12 more
core +1 more source
Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ, 2017 The article proposes a method of bandwidth extension of the analog integrated circuit of the variable-gain amplifier (VGA) based on SiGe BiCMOS technology with the rules of 0.18 µm. The designed VGA has a linear (in dB) control characteristic.
E. M. Savchenko +3 more
doaj +1 more source
Survey of Connectivity Restoration in 3D Wireless Ad Hoc/Sensor Networks
International Journal of Distributed Sensor Networks, Volume 2024, Issue 1, 2024.Wireless ad hoc/sensor networks (WASN) have seen increased application in three‐dimensional (3D) environments, such as underwater and aerial scenarios. However, WASN may be fragmented or unable to connect continuously due to the harsh surrounding environment or high mobility.
Hongsheng Chen +5 more
wiley +1 more source
, 2020 International audienceIn this article, the electrical model of a millimeter-wave (mmW), silicon-based noise source is developed in the frequency range up to 325 GHz. The model is studied as a function of the biasing current and the structure size.
Alaji, Issa +9 more
core +1 more source
Transceiver Design for Multiband OFDM UWB
EURASIP Journal on Wireless Communications and Networking, 2006 Ultra-wideband (UWB) is an emerging broadband wireless technology enabling data rates up to 480 Mbps. This paper provides an overview of recent design approaches for several circuit functions that are required for the implementation of ...
Leenaerts DMW
doaj +2 more sources
Electronics Letters, 1991 A BiCMOS differential cascode voltage switch logic (DCVSL) gate is presented. The circuit consists of a CMOS differential logic circuit and a bipolar differential sense pair. The result is a high speed CMOS to ECL conversion circuit with relatively high logic density.
S. Liang, D.H.K. Hoe, C.A.T. Salama
openaire +1 more source
233236This paper presents a WR2.2 push-push frequency doubler with two driving stages using Infineon's advanced 90nm SiGe BiCMOS technology, providing HBTs with an of 300 GHz/500 GHz, respectively.
Aufinger, Klaus +5 more
core +1 more source