Results 81 to 90 of about 8,888 (167)

High-Speed SiGe BiCMOS Technologies and Circuits

, 2017
This work reports on the development of SiGe-BiCMOS technologies for mm-wave and THz high frequency applications. We present state-of-the-art performances for different SiGe heterojunction bipolar transistor (SiGe-HBT) developments as well as the ...
A. Mai, R. Nagulapalli, A. Awny, A. Malignaggi, M. Kucharski, K. Schmalz, M. Eissa, H. J. Ng, P. Rito, M. Ko, M. Elkhouly, D. Kissinger, I. Garcia Lopez   +12 more
core   +1 more source

BiCMOS circuit optimisation

, 1996
This thesis is concerned with optimising BiCMOS circuits. A numerical optimiser finds the set of arguments to a cost function that results in its minimum value.
Routley, Paul Richard
core  

Low-power VLSI implementation of the inner receiver for OFDM-based WLAN systems [PDF]

, 2008
In this paper, we propose low-power designs for the synchronizer and channel estimator units of the Inner Receiver in wireless local area network systems.
Koushik Maharatna, Milo¿ Krstic, Eckhard Grass, Troya, Alfonso, Kraemer, Rolf, Jagdhold, Ulrich, Maharatna, Koushik, Krstic, Milos, Grass, Eckhard, Ulrich Jagdhold, Rolf Kraemer, Alfonso Troya   +11 more
core   +2 more sources

Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits

Engineering Science and Technology, an International Journal, 2016
Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS)
Kwang-Jow Gan, Jeng-Jong Lu, Wen-Kuan Yeh, Yaw-Hwang Chen, Yan-Wun Chen   +4 more
doaj   +1 more source

Effects of scaling and radiation on BiCMOS switching

, 1994
BiCMOS transient response including scaling, high current, and radiation effects has been studied. During the transient response minority carriers of the BJT are injected into the epitaxial region, widening the electrical base of the device and thus ...
Phanse, A. M., Dai, Y., Yuan, J. S.
core   +1 more source

High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane

npj Flexible Electronics, 2017
Electronics: Microfabrication enables integrated silicon-based thin-film transistors Semiconductor-based thin-film electronics is an emerging field in modern electronics due to the advance in mechanical flexibility, yet the fabrication that is currently ...
Jung-Hun Seo, Kan Zhang, Munho Kim, Weidong Zhou, Zhenqiang Ma   +4 more
doaj   +1 more source

Low Frequency Noise modelling of BiCMOS SiGe HBTs

, 2019
International audienceIn addition to the well-known High Frequency noise parameters such as the Noise Factor, the low-frequency noise (LFN) is a critical design constraint. The LFN level is upconverted to the phase noise causing spectral broadening which
Hoffmann, Alain, Chevalier, Pascal, Pascal, Fabien, Vauthelin, Alexandre, Gauthier, Alexis, Sagnes, Bruno, Gloria, Daniel, Haendler, Sébastien, Seif, Marcelino, El Beyrouthy, Johnny, Valenza, Matteo   +10 more
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Low Frequency Noise Characterization and Modeling of HBTs developed in 55 nm BiCMOS technology for three collector architectures

, 2019
International audienceThe Si/SiGe:C HBTs are one of the best candidates that provides high frequency range integrated circuits. In order to increase ft and fmax, the device dimensions are reduced which has an impact on the low frequency noise level.
Hoffmann, Alain, Pascal, Fabien, Chevalier, Pascal, Sagnes, Bruno, Haendler, Sébastien, El Beyrouthy, Johnny   +5 more
core  

Radiation and hot electron effects on BiCMOS switching

, 1994
The effects of ionizing radiation and hot electrons on the BiCMOS switching response have been studied. The radiation induced surface recombination current in the base of the bipolar transistor and the radiation and hot electron induced resistive leakage
Yeh, C. S., Phanse, A. M., Yuan, J. S.
core   +1 more source

Establishing On-Wafer Calibration Standards for the 16-Term Error Model: Application to Silicon High-Frequency Transistor Characterization

IEEE Journal of Microwaves
This work focuses on a novel methodology to establish on-wafer calibration standards for the 16-Term Error Calibration Technique. It combines TRL-calibrated data with EM simulation to precisely generate S-parameters of standards.
Sebastien Fregonese, Thomas Zimmer
doaj   +1 more source