Results 71 to 80 of about 7,247 (218)

A 320 GHz Octagonal Shorted Annular Ring On-Chip Antenna Array

IEEE Access, 2020
In this paper, an octagonal shorted annular ring (OSAR) antenna array is presented based on 130-nm SiGe BiCMOS technology without any post-processes. The OSAR antenna consists of annular ring patch, an array of shorted pins and ground which is formed a ...
Hua Zhu, Xiuping Li, Zhihang Qi, Jun Xiao   +3 more
doaj   +1 more source

A K‐band eight‐element reconfigurable phased‐array receiver with high Tx‐band rejection

IET Microwaves, Antennas &Propagation, Volume 18, Issue 12, Page 869-877, December 2024.
Abstract A K‐band eight‐element phased‐array receiver is proposed, featuring a reconfigurable beam count and high Tx‐band rejection, tailored for satellite communication applications. By precisely designing the inter‐stage and output matching networks of the four‐stage low‐noise amplifier, the Tx‐band rejection of the receiver can be effectively ...
Zhuoheng Xie, Shi Chao Jin, Jia Xing Sun, Dunge Liu, Bo Huang, Yuqian Yang, Chenyu Mei, Jinhuai Su, Jun Huang, Xiulong Wu, Lei Zhang   +10 more
wiley   +1 more source

280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate

IET Microwaves, Antennas &Propagation, Volume 18, Issue 12, Page 878-884, December 2024.
A 280–300 GHz hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate is proposed in this article, and the advantages of the SiGe and InP chips are fully made use by integrating these two chips. Abstract In this paper, a 280–300 GHz hybrid‐integrated transmitter is proposed.
Haiyan Lu, Jixin Chen, Pinpin Yan, Si‐Yuan Tang, Yu Zheng, Sidou Zheng, Wei Cheng, Yan Sun, Peigen Zhou, Long Chang, Longzhu Cai, Zhi Hao Jiang, Hongqi Tao, Tangsheng Chen, Wei Hong   +14 more
wiley   +1 more source

Millimeter-wave noise source development on SiGe BiCMOS 55-nm technology for applications up to 260 GHz

, 2019
International audienceThis paper describes the development and characterization of a millimeter-wave (mmW) integrated noise source development on silicon technology for applications up to 260 GHz. The developed integrated noise source is based on p-n and
Ducournau, Guillaume, Danneville, Francois, Gloria, Daniel, Gaquière, Christophe, Azevedo Goncalves, Joao Carlos, Ghanem, Haitham, Bouvot, Simon, Lepilliet, Sylvie   +7 more
core   +1 more source

100 MHz current generator with T/(T − t) time waveform in 0.35 μm BiCMOS technology

Electronics Letters, 2016
A 0.35 μm BiCMOS current generator suitable for optical quantum random number generators is presented. The time dependence of the current pulses is of the form T/(T − t).
N. Tadić, B. Goll, H. Zimmermann
doaj   +1 more source

Optimizing SiGe–SiO2 Visible–Short‐Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing

Advanced Photonics Research, Volume 5, Issue 8, August 2024.
The beneficial effect of rapid‐like furnace annealing (FA) on photoconductive response of SiGe nanocrystals (NCs)‐based structures is revealed by comparison to rapid thermal annealing. FA structures present photocurrent spectra with enhanced intensity of peaks due to strain, explained by the short annealing time for NC formation without reaching ...
Muhammad Taha Sultan, Ionel Stavarache, Andrei Manolescu, Unnar Bjarni Arnalds, Valentin Serban Teodorescu, Halldor Gudfinnur Svavarsson, Snorri Ingvarsson, Magdalena Lidia Ciurea   +7 more
wiley   +1 more source

Design considerations of high voltage RESURF nLDMOS: An analytical and numerical study

Ain Shams Engineering Journal, 2015
In this paper, a RESURF high voltage (HV) nLDMOS is designed in 0.35 μm BiCMOS technology (STMicroelectronics technology-like). Optimization of the key device/process parameters of the device is performed using analytical approach and verified using ...
Mohamed Abouelatta-Ebrahim, Ahmed Shaker, Gihan T. Sayah, Christian Gontrand, Abdelhalim Zekry   +4 more
doaj   +1 more source

Active quasi circulator: Comprehensive review and performance comparison

Engineering Reports, Volume 6, Issue 6, June 2024.
To cope up with the increased data transmission rate due to the modern multiband wireless communication systems, the three‐port circulator must be equipped with the ability to operate in different frequency levels while having adequate bandwidth. Thus, designing circulator as an antenna interface device becomes a challenging, particularly active‐quasi ...
Mehedi Hasan, Sujan Chowdhury, Hasan U. Zaman   +2 more
wiley   +1 more source

BiCMOS vs CMOS at RIT [PDF]

, 1991
This project involved the performance comparison of the standard RIT N-well CMOS and a proposed BiCMOS processes. Device parameters were extracted from TMA SUPREM-3 simulations and used to create NPN, PMOS, and NMOS model cards for ~ccusim simulations ...
Raif, Anatole
core  

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

Electronics Letters, Volume 60, Issue 7, April 2024.
A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm. Abstract A compact 60‐GHz
Kai‐Da Xu, Shangjing Xi, Hairui Liu, Shichang Chen   +3 more
wiley   +1 more source