Results 71 to 80 of about 8,888 (167)

An Ultra‐Wideband Low Noise Colpitts VCO Using SiGe Bi‐CMOS Technology

The Journal of Engineering, Volume 2025, Issue 1, January/December 2025.
This paper proposes a wideband voltage‐controlled oscillator (VCO) circuit based on the Colpitts oscillator structure. By employing amplifiers, frequency multipliers, and other techniques to process the output signal, an ultra‐wideband frequency tuning range can be achieved.
PeiYing Cai, Tao Peng, Boming Su, Yi Wu, Guochi Huang   +4 more
wiley   +1 more source

A K‐band eight‐element reconfigurable phased‐array receiver with high Tx‐band rejection

IET Microwaves, Antennas &Propagation, Volume 18, Issue 12, Page 869-877, December 2024.
Abstract A K‐band eight‐element phased‐array receiver is proposed, featuring a reconfigurable beam count and high Tx‐band rejection, tailored for satellite communication applications. By precisely designing the inter‐stage and output matching networks of the four‐stage low‐noise amplifier, the Tx‐band rejection of the receiver can be effectively ...
Zhuoheng Xie, Shi Chao Jin, Jia Xing Sun, Dunge Liu, Bo Huang, Yuqian Yang, Chenyu Mei, Jinhuai Su, Jun Huang, Xiulong Wu, Lei Zhang   +10 more
wiley   +1 more source

Analog 2:1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS Technology

We report on a 2:1 analog multiplexer (AMUX) circuit in 130-nm SiGe BiCMOS technology. The technology offers HBTs with peak fT of 470 GHz and fmax of 650 GHz.
Grözing, Markus, Berroth, Manfred, Choi, Junghan, Tannert, Tobias, Caspar, Christoph, Rücker, Holger, Schostak, Jonathan, Jungnickel, Volker, Freund, Ronald E., Schmidt, Christian   +9 more
core   +1 more source

Millimeter-wave noise source development on SiGe BiCMOS 55-nm technology for applications up to 260 GHz

, 2019
International audienceThis paper describes the development and characterization of a millimeter-wave (mmW) integrated noise source development on silicon technology for applications up to 260 GHz. The developed integrated noise source is based on p-n and
Ducournau, Guillaume, Danneville, Francois, Gloria, Daniel, Gaquière, Christophe, Azevedo Goncalves, Joao Carlos, Ghanem, Haitham, Bouvot, Simon, Lepilliet, Sylvie   +7 more
core   +1 more source

The Method of Bandwidth Extension of SiGe BiCMOS Microwave Variable-Gain Amplifier Integrated Circuit

Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ, 2017
The article proposes a method of bandwidth extension of the analog integrated circuit of the variable-gain amplifier (VGA) based on SiGe BiCMOS technology with the rules of 0.18 µm. The designed VGA has a linear (in dB) control characteristic.
E. M. Savchenko, A. S. Budiakov, P. S. Budiakov, N. N. Prokopenko   +3 more
doaj   +1 more source

Transceiver Design for Multiband OFDM UWB

EURASIP Journal on Wireless Communications and Networking, 2006
Ultra-wideband (UWB) is an emerging broadband wireless technology enabling data rates up to 480 Mbps. This paper provides an overview of recent design approaches for several circuit functions that are required for the implementation of ...
Leenaerts DMW
doaj   +2 more sources

Konzepte für eine digitale gemischte bipolare CMOS-Schaltungstechnik -BICMOS-

, 2022
S.163-166 : Abb.,Lit.Es werden Konzepte fuer eine digitale BICMOS-Schaltungstechnik vorgestellt, bei der durch Kombination von bipolaren und CMOS-Elementen auf einem Chip die vorteilhaften Eigenschaften beider Technologien zum Tragen kommen: einerseits ...
Schardein, W., Rothermel, A., Zimmer, G., Hosticka, B.J., Sieber, P.   +4 more
core   +1 more source

Speed comparison of digital BiCMOS and CMOS circuits

, 2022
S.49-56Today BiCMOS technologies are becoming more and more attractive and offer an interesting alternative to existing technologies. In the paper it will be shown that in digital circuits the bipolar transistor does not necessarily improve BiCMOS speed ...
Rothermel, A., Hosticka, B.J.
core   +1 more source

High speed wide band programmable frequency divider for JESD204B/C

Dianzi Jishu Yingyong
In order to meet the application requirements of JESD204B/C system in high-speed multi-channel scenarios, a programmable frequency divider with high speed and wide operating frequency is designed by using current mode logic (CML).
Jiang Chenyang, Yang Junhao, Wang Baikang, Jiang Yingdan   +3 more
doaj   +1 more source

A 377-416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS

233236This paper presents a WR2.2 push-push frequency doubler with two driving stages using Infineon's advanced 90nm SiGe BiCMOS technology, providing HBTs with an of 300 GHz/500 GHz, respectively.
Aufinger, Klaus, Yildirim, Muhammed Ali, Welling, Tobias Leander, Romstadt, Justin, Pohl, Nils, Vogelsang, Florian   +5 more
core   +1 more source