A fully integrated multiband frequency synthesizer for WLAN and WiMAX applications [PDF]
, 2010 This paper presents a fractional N frequency synthesizer which covers WLAN and WiMAX frequencies on a single chip. The synthesizer is fully integrated in 0.35μm BiCMOS AMS technology except crystal oscillator.
Gurbuz, Yasar +8 more
core +1 more source
Transceiver Design for Multiband OFDM UWB
EURASIP Journal on Wireless Communications and Networking, 2006 Ultra-wideband (UWB) is an emerging broadband wireless technology enabling data rates up to 480 Mbps. This paper provides an overview of recent design approaches for several circuit functions that are required for the implementation of ...
Leenaerts DMW
doaj +2 more sources
A 24-GHz SiGe Phased-Array Receiver—LO Phase-Shifting Approach [PDF]
, 2005 A local-oscillator phase-shifting approach is introduced to implement a fully integrated 24-GHz phased-array receiver using an SiGe technology. Sixteen phases of the local oscillator are generated in one oscillator core, resulting in a raw beam-forming ...
Guan, Xiang +3 more
core +1 more source
1.25 Gbit/s ITU-T G.984.2 burst-mode transimpedance amplifier without reset pins [PDF]
, 2007 A
Bauwelinck, Johan +6 more
core +2 more sources
Low-voltage waveguide Ge APD based high sensitivity 10 Gb/s Si photonic receiver [PDF]
, 2015 We demonstrate low-voltage Ge waveguide avalanche photodetectors (APDs) with gain-bandwidth product over 100GHz. A 5.8dB avalanche sensitivity improvement (1x10(-12) bit error ratio at 10Gb/s) is obtained for the wire-bonded optical receiver at -5.9V APD
Absil, P +10 more
core +2 more sources
A 77 GHz on-chip strip dipole antenna integrated with balun circuits for automotive radar [PDF]
, 2012 In this paper, design and implementation of a 77 GHz on-chip strip dipole antenna integrated with both lumped and transmission line based balun circuits are presented.
Kaynak, Mehmet +2 more
core +1 more source
Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits
Engineering Science and Technology, an International Journal, 2016 Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS)
Kwang-Jow Gan +4 more
doaj +1 more source
High-performance flexible BiCMOS electronics based on single-crystal Si nanomembrane
npj Flexible Electronics, 2017 Electronics: Microfabrication enables integrated silicon-based thin-film transistors Semiconductor-based thin-film electronics is an emerging field in modern electronics due to the advance in mechanical flexibility, yet the fabrication that is currently ...
Jung-Hun Seo +4 more
doaj +1 more source
A 64-point Fourier transform chip for high-speed wireless LAN application using OFDM
, 2004 In this article, we present a novel fixed-point 16-bit word-width 64-point FFT/IFFT processor developed primarily for the application in the OFDM based IEEE 802.11a Wireless LAN (WLAN) baseband processor.
Grass, Eckhard +2 more
core +1 more source
Integrated Transversal Equalizers in High-Speed Fiber-Optic Systems [PDF]
, 2003 Intersymbol interference (ISI) caused by intermodal dispersion in multimode fibers is the major limiting factor in the achievable data rate or transmission distance in high-speed multimode fiber-optic links for local area networks applications.
Gowda, Sudhir +6 more
core