Results 51 to 60 of about 7,247 (218)

A 130‐nm SiGe BiCMOS On‐Chip Diplexer With High‐Q Inductors for K/Ka‐Band Applications

International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.
This paper presents a high‐performance on‐chip diplexer designed for K/Ka‐band applications, fabricated via 130‐nm SiGe BiCMOS across two distinct frequency bands: 17–21 and 27–31 GHz. A localized backside etching (LBE) technique is employed to create air cavities beneath the inductors, a method that fundamentally mitigates substrate‐related losses and
Francesco Greco, Emilio Arnieri, Melih Gokdemir, Mohammed Alramadan, Giandomenico Amendola, Walter Ciccognani, Ernesto Limiti, Hussein Ezzeddine, Enrico Massoni, Luigi Boccia, Jin Xu   +10 more
wiley   +1 more source

Passive On-Chip Components for Fully Integrated Silicon RF VCOs

Active and Passive Electronic Components, 2002
In this work integrated passive devices used in RF VCOs are presented. The operation of on-chip inductors and variable capacitors is outlined along with simple electrical equivalent circuits suitable for hand calculations.
Aristides Kyranas, Yannis Papananos
doaj   +1 more source

High-Performance BiCMOS Transimpedance Amplifiers for Fiber-Optic Receivers

The Journal of Engineering Research, 2007
High gain, wide bandwidth, low noise, and low-power transimpedance amplifiers based on new BiCMOS common- base topologies have been designed for fiber-optic receivers.
F. Touati, M. Loulou
doaj   +1 more source

CMOS and BiCMOS Technologies

, 2022
International audience ; This chapter describes tunable circuits in CMOS and BiCMOS technologies. First, active and passive basic components are briefly described: MOS and bipolar transistors, and passive components like MOM capacitors, and transmission lines.
Ferrari, Philippe, Bourdel, Sylvain, Quémerais, Thomas, Bautista, Alfredo   +3 more
openaire   +1 more source

Demonstration of a Graphene Adjustable‐Barriers Phototransistor with Tunable Ultra‐High Responsivity

Advanced Optical Materials, Volume 13, Issue 18, June 26, 2025.
A novel graphene‐based phototransistor with a tunable ultra‐high responsivity of 1.7 x 107 AW−1 has been demonstrated. Due to the selected material combination of amorphous silicon, graphene and n‐germanium, the device is potentially capable of dual‐band detection in the VIS‐IR range.
Carsten Strobel, Carlos A. Chavarin, Martin Knaut, Christian Wenger, André Heinzig, Thomas Mikolajick   +5 more
wiley   +1 more source

A novel current‐source management integrated circuit applied to high‐voltage integrated gate commutated thyristor gate driver

High Voltage, Volume 10, Issue 3, Page 533-545, June 2025.
Abstract This paper presents a fully customised integrated gate commutated thyristor (IGCT) gate driver monolithic integrated circuit (GDMIC), aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components, such as the excessive number of components, low reliability, and complex development processes.
Shiping Chen, Zhanqing Yu, Jiaxu Shi, Zhengyu Chen, Lu Qu, Jinpeng Wu, Rong Zeng   +6 more
wiley   +1 more source

On Wafer Millimetre Wave Power Detection Using a PN Junction Diode in BiCMOS 55 nm for In-Situ Large Signal Characterization

, 2018
International audienceThis paper describes millimetre wave (mmW) on-wafer power detection using dedicated high frequency diode junction with a cut-off frequency (fc) of 400 GHz, integrated in SiGe BiCMOS 55 nm technology from STMicroelectronics.
Frederic Gianesello, Alaji, Issa, Ducournau, Guillaume, Gidel, Vincent, Lepilliet, Sylvie, Christophe Gaquiere, Daniel Gloria, Guillaume Ducournau, Gianesello, Frederic, Danneville, Francois, Gloria, Daniel, Joao Carlos Azevedo Goncalves, Gaquière, Christophe, Issa Alaji, Vincent Gidel, Goncalves, Joao Carlos Azevedo, Sylvie Lepilliet, Francois Danneville   +17 more
core   +1 more source

Circuit analysis of BiCMOS gate delay

, 1997
A circuit analysis of the BiCMOS switching transient is presented. The BiCMOS pull-up delay as a function of transistor parameters and power supply voltage is evaluated. The analytical predictions are compared with SPICE circuit simulation.
Pham, H. D., Yuan, J. S.
core   +2 more sources

Fabrication of low-loss SOI nano-waveguides including BEOL processes for nonlinear applications [PDF]

Journal of the European Optical Society-Rapid Publications, 2012
We report successful fabrication of low-loss SOI nano-waveguides with integrated PIN diode structures. The entire fabrication process is done on a 200 mm BiCMOS toolset using front-end-of-line (FEOL) and back-end-of-line (BEOL) processes and does not ...
Tian H., Winzer G., Gajda A., Petermann K., Tillack B., Zimmermann L.   +5 more
doaj   +1 more source

Area‐efficient ultra‐wide‐tuning‐range ring oscillators in 65‐nm complementary metal–oxide–semiconductor

International Journal of Circuit Theory and Applications, Volume 53, Issue 3, Page 1253-1291, March 2025.
FIGURE 1. Comparison between the proposed method and prior state‐of‐the‐art: (a) TR vs. frequency; (b) FOMT vs. frequency. FIGURE 2. Comparison between the proposed method and prior art: (a) FOMTA vs. frequency; (b) TR vs. area. These designs showcase the versatility and efficiency of the two‐mode current‐starved delay architecture, which offers wide ...
Chaowei Yang, Yong Chen, Kai Cheng, Crovetti Paolo Stefano, Rui P. Martins, Pui‐In Mak   +5 more
wiley   +1 more source