Results 51 to 60 of about 8,888 (167)
Compound‐Eye RF Vision for Next‐Generation Biomedical and Human‐Centred Radar Sensing
This paper will first review recent biomedical radar‐enabled advancements at the human–microwave frontier, including physiological signal sensing, non‐contact human–computer interfaces, driving behaviour recognition, human tracking, and early‐stage clinical studies.
Victor G. Rizzi Varela, Changzhi Li
wiley +1 more source
Current digital communication systems need systems with high throughput, low latency, and hardware‐efficient structures that can scale with the growing complexity of data. Multiplexing and demultiplexing methods are crucial for meeting these requirements as they allow more than one data stream to be transmitted using the same channel.
Aruna Pant +3 more
wiley +1 more source
International audienceThis paper describes millimetre wave (mmW) on-wafer power detection using dedicated high frequency diode junction with a cut-off frequency (fc) of 400 GHz, integrated in SiGe BiCMOS 55 nm technology from STMicroelectronics.
Frederic Gianesello +17 more
core +1 more source
A 130‐nm SiGe BiCMOS On‐Chip Diplexer With High‐Q Inductors for K/Ka‐Band Applications
This paper presents a high‐performance on‐chip diplexer designed for K/Ka‐band applications, fabricated via 130‐nm SiGe BiCMOS across two distinct frequency bands: 17–21 and 27–31 GHz. A localized backside etching (LBE) technique is employed to create air cavities beneath the inductors, a method that fundamentally mitigates substrate‐related losses and
Francesco Greco +10 more
wiley +1 more source
Coupled-Lines Modeling and Design in (Bi)CMOS Technologies
This article establishes a systematic modeling and design methodology for incorporating coupled-lines (Clines) structures into standard CMOS/BiCMOS design flows.
Joao E. Gentil Le +6 more
doaj +1 more source
Demonstration of a Graphene Adjustable‐Barriers Phototransistor with Tunable Ultra‐High Responsivity
A novel graphene‐based phototransistor with a tunable ultra‐high responsivity of 1.7 x 107 AW−1 has been demonstrated. Due to the selected material combination of amorphous silicon, graphene and n‐germanium, the device is potentially capable of dual‐band detection in the VIS‐IR range.
Carsten Strobel +5 more
wiley +1 more source
Circuit analysis of BiCMOS gate delay
A circuit analysis of the BiCMOS switching transient is presented. The BiCMOS pull-up delay as a function of transistor parameters and power supply voltage is evaluated. The analytical predictions are compared with SPICE circuit simulation.
Pham, H. D., Yuan, J. S.
core +2 more sources
Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits
In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date.
Minoru Fujishima
doaj +1 more source
Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components
In this paper, the slow‐wave coplanar stripline (S‐CPS) technology is utilised to design high performance and small footprint resonators operating within the millimetre‐wave band from 50 to 80 GHz.
Abdelhalim A. Saadi +6 more
doaj +1 more source
Abstract This paper presents a fully customised integrated gate commutated thyristor (IGCT) gate driver monolithic integrated circuit (GDMIC), aiming to address the many shortcomings of traditional IGCT gate driver units composed of discrete components, such as the excessive number of components, low reliability, and complex development processes.
Shiping Chen +6 more
wiley +1 more source

