Results 91 to 100 of about 7,247 (218)

Konzepte für eine digitale gemischte bipolare CMOS-Schaltungstechnik -BICMOS-

, 2022
S.163-166 : Abb.,Lit.Es werden Konzepte fuer eine digitale BICMOS-Schaltungstechnik vorgestellt, bei der durch Kombination von bipolaren und CMOS-Elementen auf einem Chip die vorteilhaften Eigenschaften beider Technologien zum Tragen kommen: einerseits ...
Schardein, W., Rothermel, A., Zimmer, G., Hosticka, B.J., Sieber, P.   +4 more
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Design of coupled slow-wave CPW millimeter-wave bandpass filter beyond 100 GHz in 55-nm BiCMOS technology

, 2021
International audienceThe design and experimental results of millimeter-wave bandpass filters (BPFs) implemented in 55-nm BiCMOS technology and operating around 120 GHz are presented in this article. Slightly modified coupled line filters' structures are
Vincent, Loïc, Occello, Olivier, Gaquière, Christophe, Saadi, Abdelhalim, Lepilliet, Sylvie, Margalef-Rovira, Marc, Ferrari, Philippe   +6 more
core   +1 more source

Radiation and hot electron effects on BiCMOS switching

, 1994
The effects of ionizing radiation and hot electrons on the BiCMOS switching response have been studied. The radiation induced surface recombination current in the base of the bipolar transistor and the radiation and hot electron induced resistive leakage
Yeh, C. S., Phanse, A. M., Yuan, J. S.
core   +1 more source

High speed wide band programmable frequency divider for JESD204B/C

Dianzi Jishu Yingyong
In order to meet the application requirements of JESD204B/C system in high-speed multi-channel scenarios, a programmable frequency divider with high speed and wide operating frequency is designed by using current mode logic (CML).
Jiang Chenyang, Yang Junhao, Wang Baikang, Jiang Yingdan   +3 more
doaj   +1 more source

Effects of scaling and radiation on BiCMOS switching

, 1994
BiCMOS transient response including scaling, high current, and radiation effects has been studied. During the transient response minority carriers of the BJT are injected into the epitaxial region, widening the electrical base of the device and thus ...
Phanse, A. M., Dai, Y., Yuan, J. S.
core   +1 more source

Modelling the BiCMOS switching delay including radiation effects

, 1997
The effect of ionising radiation on the BiCMOS switching response has been studied. The radiation-induced surface recombination current in the base of the bipolar transistor and the radiation-induced resistive leakage paths in the BiCMOS structure have ...
Yeh, C. S., Phanse, A. M., Yuan, J. S.
core   +2 more sources

Speed comparison of digital BiCMOS and CMOS circuits

, 2022
S.49-56Today BiCMOS technologies are becoming more and more attractive and offer an interesting alternative to existing technologies. In the paper it will be shown that in digital circuits the bipolar transistor does not necessarily improve BiCMOS speed ...
Rothermel, A., Hosticka, B.J.
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Low Frequency Noise Characterization and Modeling of HBTs developed in 55 nm BiCMOS technology for three collector architectures

, 2019
International audienceThe Si/SiGe:C HBTs are one of the best candidates that provides high frequency range integrated circuits. In order to increase ft and fmax, the device dimensions are reduced which has an impact on the low frequency noise level.
Hoffmann, Alain, Pascal, Fabien, Chevalier, Pascal, Sagnes, Bruno, Haendler, Sébastien, El Beyrouthy, Johnny   +5 more
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Multiple-valued logic design based on the multiple-peak BiCMOS-NDR circuits

Engineering Science and Technology, an International Journal, 2016
Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (MOS)
Kwang-Jow Gan, Jeng-Jong Lu, Wen-Kuan Yeh, Yaw-Hwang Chen, Yan-Wun Chen   +4 more
doaj   +1 more source

Low Frequency Noise modelling of BiCMOS SiGe HBTs

, 2019
International audienceIn addition to the well-known High Frequency noise parameters such as the Noise Factor, the low-frequency noise (LFN) is a critical design constraint. The LFN level is upconverted to the phase noise causing spectral broadening which
Hoffmann, Alain, Chevalier, Pascal, Pascal, Fabien, Vauthelin, Alexandre, Gauthier, Alexis, Sagnes, Bruno, Gloria, Daniel, Haendler, Sébastien, Seif, Marcelino, El Beyrouthy, Johnny, Valenza, Matteo   +10 more
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