An integrated 3.1–5.1 GHz pulse generator for ultra-wideband wireless localization systems [PDF]
This paper presents an implementation of an integrated Ultra-wideband (UWB), Binary-Phase Shift Keying (BPSK) Gaussian modulated pulse generator. VCO, multiplier and passive Gaussian filter are the key components.
X. Fan, G. Fischer, B. Dietrich
doaj
A 17.8-20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers. [PDF]
Del Pino J +6 more
europepmc +1 more source
Regulador de voltaje 5V con tecnología BiCMOS
This article first discusses the design and operation of a 5 V voltage regulator based on the Texas Instruments LM109/LM309, and then makes innovation with BiCMOS technology, highlighting its importance in modern electronic applications, especially in ...
Gonzalez Vidal, José Luis +2 more
core +2 more sources
Chessboard FPA in 130-nm SiGe BiCMOS for High-Resolution Passive Terahertz Imaging
This work presents a chessboard focal plane array (FPA) camera with state-of-the-art thermal and spatial resolution in the 200–$600 \,\mathrm{G}\mathrm{Hz}$ frequency range.
Martijn Hoogelander +5 more
doaj +1 more source
A Fully Integrated D-Band I/Q Homodyne Transceiver Enabling a Multi-Gigabit Wired Link
This paper presents a fully integrated direct-conversion I/Q transmitter and receiver fabricated in a 130-nm SiGe BiCMOS process and experimentally validated through a short-range on-board link.
Vasileios Manouras +2 more
doaj +1 more source
Performance characterisation and design issues of low voltage BiCMOS digital circuits
This report addresses the work done on the power and speed optimisation of 4 different BiCMOS gate structures using 3 sub-micron technologies; namely 1.5V/0.35um, 2.2V/0.5|im and 3.3V/0.8(im for several fan-in fan-out conditions.
Cheong, Chee Seng.
core
Grundlagen der analogen und digitalen Schaltungstechnik mit BICMOS
S.108-112Die gemischte Bipolar-CMOS-Technologie (BICMOS) stellt eine Weiterentwicklung der CMOS-Technologie dar. Das wichtigste Bauelement dieser Technologie, der MOS-Feldeffekttransistor, hat sich für niedrige Belastungen sehr gut bewährt.
Eßer, W. +3 more
core
Dual-polarization multiplexing amorphous Si:H grating couplers for silicon photonic transmitters in the photonic BiCMOS backend of line. [PDF]
Georgieva G +4 more
europepmc +1 more source
Schaltungstechniken und Architekturen für die parallele Signalverarbeitung in BiCMOS-Technik
Dieser Beitrag zeigt auf, welche Vorteile sich durch den Einsatz einer hochwertigen BiCMOS-Kombinationstechnologie, und damit durch die gemeinsame Nutzung von spannungsgesteuerten MOS- und stromgesteuerten Bipolartransistoren, bei der Implementierung ...
Eßer, W. +3 more
core
A Compact and Power-Efficient Noise Generator for Stochastic Simulations. [PDF]
Zhao H, Sarpeshkar R, Mandal S.
europepmc +1 more source

