Results 111 to 120 of about 467 (179)
Advances in Interface Circuits for Self-Powered Piezoelectric Energy Harvesting Systems: A Comprehensive Review. [PDF]
Al Ghazi A, Ouslimani A, Kasbari AE.
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The coming wave of confluent biosynthetic, bioinformational and bioengineering technologies. [PDF]
Pretorius IS +4 more
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A fully integrated harmonic injection and envelope-tracking architecture to extend the linearity of RF power amplifiers under high PAPR. [PDF]
Ziraksaz F, Hassanzadeh A.
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Wearable frequency-domain near-infrared spectroscopy (FD-NIRS) system. [PDF]
Lahade S +6 more
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MICROWAVE BIOSENSORS for SINGLE-CELL DIELECTRIC CHARACTERIZATION: a REVIEW. [PDF]
Sun S, Palego C, Cheng X.
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Broad-Bandwidth Frequency-Domain Near-Infrared Spectroscopy System on a Chip. [PDF]
Yazdi S +6 more
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IEEE Journal of Solid-State Circuits, 1988
A high-performance BiCMOS technology (Hi-BiCMOS) and its applications to VLSIs are described. By combining bipolar and CMOS devices in unit circuits of VLSIs, Hi-BiCMOS provides both speed performance competitive with bipolar LSIs and integration density close to that of CMOS LSIs.
K Ogiue
exaly +2 more sources
A high-performance BiCMOS technology (Hi-BiCMOS) and its applications to VLSIs are described. By combining bipolar and CMOS devices in unit circuits of VLSIs, Hi-BiCMOS provides both speed performance competitive with bipolar LSIs and integration density close to that of CMOS LSIs.
K Ogiue
exaly +2 more sources
A sub-2.0 V BiCMOS logic circuit with a BiCMOS charge pump
IEEE Journal of Solid-State Circuits, 1996A BiCMOS logic circuit with very small input capacitance has been developed, which operates at low supply voltages. A High-beta BiCMOS (H/spl beta/-BiCMOS) gate circuit which fully utilizes the bipolar transistor features achieves 10 times the speed of a CMOS gate circuit with the same input capacitance and operating at 3.3 V supply voltage.
Hitoshi Okamura +6 more
exaly +2 more sources

