A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process. [PDF]
Micromachines (Basel)Shen Y, Luo J, Zhao W, Dai JY, Cheng Q.
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A 0.049 mm<sup>2</sup> 0.5-to-5.8 GHz LNA Achieving a Flat High Gain Based on an Active Inductor and Low Capacitive ESD Protection. [PDF]
Micromachines (Basel)Dong D +6 more
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A 3.0-V, High-Precision, High-PSRR BGR with High-Order Compensation and Improved FVF Pre-Regulation. [PDF]
Micromachines (Basel)Shen Y +7 more
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Modeling and optimization of BiCMOS embedded through-silicon vias for RF-grounding [PDF]
, 2013 Kaynak, M. +7 more
core
Deep-learning enabled generalized inverse design of multi-port radio-frequency and sub-terahertz passives and integrated circuits. [PDF]
Nat CommunKarahan EA +6 more
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Design of a Bandgap Reference Circuit for MEMS Integrated Accelerometers. [PDF]
Micromachines (Basel)Zhang W +5 more
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A Fast Transient Adaptive On-Time Controlled BUCK Converter with Dual Modulation. [PDF]
Micromachines (Basel), 2023 Sun M +5 more
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Pushing the boundaries: an interview with Dae-Hyun Kim on terahertz devices. [PDF]
Natl Sci RevWang D.
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Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad. [PDF]
Sensors (Basel), 2020 Lee C, Cho G, Unruh T, Hur S, Kwon I.
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A Low-Phase-Noise 8 GHz Linear-Band Sub-Millimeter-Wave Phase-Locked Loop in 22 nm FD-SOI CMOS. [PDF]
Micromachines (Basel), 2023 Kebe M, Sanduleanu M.
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