Results 1 to 10 of about 35,518 (242)

Silicon-on-insulator nanophotonics [PDF]

SPIE Proceedings, 2005
Nanophotonics promise a dramatic scale reduction compared to contemporary photonic components. This allows the integration of many functions onto a chip. Silicon-on-insulator (SOI) is an ideal material for nanophotonics. It consists of a thin layer of silicon on top of an oxide buffer.
Stephan Beckx, Patrick Jaenen, Pieter Dumon, Dries Van Thourhout, Vincent Wiaux, Wim Bogaerts, Bert Luyssaert, Johan M.D. Wouters, Roel Baets, Dirk Taillaert   +9 more
openaire   +2 more sources

Pattern Formation on Silicon-on-Insulator [PDF]

MRS Proceedings, 2004
ABSTRACTThe strain driven self-assembly of faceted Ge nanocrystals during epitaxy on Si(001) to form quantum dots (QDs) is by now well known. We have also recently provided an understanding of the thermodynamic driving force for directed assembly of QDs on bulk Si (extendable to other QD systems) based on local chemical potential and curvature of the ...
Feng Liu, Max G. Lagally, Minghuang Huang, Mark A. Eriksson, Frank S. Flack, Matt Marcus, O. M. Castellini, Bin Yang, J. M. Simmons   +8 more
openaire   +2 more sources

Giant, Anomalous Piezoimpedance in Silicon-on-insulator [PDF]

Physical Review Applied, 2019
14 pages with 10 figures including ...
Li, H., Lew, C.T.K., Johnson, B.C., Mccallum, J.C., Arscott, S., Rowe, A.C.H.   +5 more
openaire   +6 more sources

A compact silicon-on-insulator polarization splitter [PDF]

IEEE Photonics Technology Letters, 2005
A compact directional coupler-based polarization splitter is designed and realized using silicon-on-insulator (SOI) waveguides. Even though silicon does not have any material birefringence, the high index contrast obtained in the SOI platform and reduced waveguide dimensions makes it possible to induce significant birefringence.
Kiyat I., Aydinli, A., Dagli, N.
openaire   +6 more sources

Silicon on insulator MESFETs for RF amplifiers [PDF]

Solid-State Electronics, 2010
CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3V CMOS process without any changes to the process flow. A 0.6μm gate length device operates with a cut-off frequency of 7.3GHz and a maximum oscillation frequency of 21GHz.
Seth J. Wilk, J. Ervin, Trevor Thornton, A. Balijepalli, William Lepkowski   +4 more
openaire   +3 more sources

Silicon-on-insulator ‘HRes’ circuit

Electronics Letters, 1994
Retinal circuits in bulk CMOS are complicated by the need to compensate for the back-gate effect. However, partially depleted silicon-on-insulator devices have a greatly reduced back-gate effect compared to bulk CMOS. Silicon retinae implemented using SOI technology would therefore be smaller and simpler than the bulk CMOS equivalent.
R.J.T. Bunyan, G.F. Marshall, S. Collins
openaire   +2 more sources

Lateral Tunnel Epitaxy of GaAs in Lithographically Defined Cavities on 220 nm Silicon-on-Insulator. [PDF]

Cryst Growth Des, 2023
Yan Z, Ratiu BP, Zhang W, Abouzaid O, Ebert M, Reed GT, Thomson DJ, Li Q.   +7 more
europepmc   +1 more source

Fiber-to-Chip Three-Dimensional Silicon-on-Insulator Edge Couplers with High Efficiency and Tolerance. [PDF]

Micromachines (Basel), 2023
Li X, Yu S, Gui C.
europepmc   +1 more source

Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor. [PDF]

Sensors (Basel), 2023
Generalov V, Cheremiskina A, Glukhov A, Grabezhova V, Kruchinina M, Safatov A.   +5 more
europepmc   +1 more source

"Silicon-On-Insulator"-Based Biosensor for the Detection of MicroRNA Markers of Ovarian Cancer. [PDF]

Micromachines (Basel), 2022
Ivanov YD, Kapustina SI, Malsagova KA, Goldaeva KV, Pleshakova TO, Galiullin RA, Shumov ID, Kozlov AF, Glukhov AV, Grabezhova VK, Popov VP, Petrov OF, Ziborov VS, Kushlinskii NE, Alferov AA, Konev VA, Kovalev OB, Uchaikin VF, Archakov AI.   +18 more
europepmc   +1 more source