Results 31 to 40 of about 70,198,860 (309)

Evanescently Coupled Rectangular Microresonators in Silicon-on-Insulator with High Q-Values: Experimental Characterization

Photonics, 2017
We report on evanescently coupled rectangular microresonators with dimensions up to 20 × 10 μm2 in silicon-on-insulator in an add-drop filter configuration.
Manuel Mendez-Astudillo, Hideaki Okayama, Hirochika Nakajima   +2 more
doaj   +1 more source

Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength

Electronics Letters
This work intends to investigate the impact of silicon layer thickness and substrate biasing on the UV photodetection efficiency of PIN diodes fabricated with ultra‐thin body and buried oxide (UTBB silicon‐on‐insulator [SOI]) technology, aiming to verify
Fernando O. S. Silva, Rodrigo T. Doria
doaj   +1 more source

Enhanced Sensitivity of Silicon-On-Insulator Surface Plasmon Interferometer With Additional Silicon Layer

IEEE Photonics Journal, 2011
It is theoretically found that by adding a thin silicon layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon on insulator (SOI), a sensitivity enhancement of up to 2500 nm/refractive index units (RIUs ...
Khai Q. Le, Peter Bienstman
doaj   +1 more source

Mid-infrared photonics devices in SOI

, 2013
In this paper we present silicon photonics devices designed for the 3-4µm wavelength region including waveguides, MMIs, ring resonators and Mach-Zehnder interferometers. The devices are based on silicon on insulator (SOI) platform. We show that 400-500nm
Reed, G.T., Nedeljković, M., Hu, Y., Peacock, A.C., Milošević, M.M., Ben Masaud, T.M., Jaberansary, E., Chen, Xia, Strain, M., Sorel, M., Mashanovich, G.Z., Chong, H.M.H., Y. Hu, M. Sorel, T. M. Ben Masaud, G. Z. Mashanovich, E. Jaberansary, H. M. H. Chong, M. M. Milošević, M. Strain, G. T. Reed, A. C. Peacock, M. Nedeljkovic, X. Chen   +23 more
core   +1 more source

Highly efficient coupling between a monolithically integrated photonic crystal cavity and a bus waveguide [PDF]

, 2012
We experimentally demonstrate a new optical filter design comprising of a photonic crystal cavity and a low index bus waveguide which are monolithically integrated on a silicon-on-insulator (SOI) platform.
Ferrera, Marcello, Krauss, Thomas Fraser, Lidzey, David, Thomas F. Krauss, O'Faolain, Liam, Kieran Deasy, Debnath, Kapil, Karl Welna, Welna, Karl Peter, David Lidzey, Liam O'Faolain, Kapil Debnath, Deasy, Kieran, Marcello Ferrera   +13 more
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

High-Power-Compatible Thick Silicon-on-Insulator Waveguide: An Implementation in Optical Phased Array

IEEE Photonics Journal
High-power transmission capability is a critical yet insufficiently explored frontier in integrated photonics. Owing to the restricted optical cross-sectional area of the 220 nm-thick silicon layer, conventional SOI platform is incapable of managing the ...
Jingsi Chen, Daixin Lian, Shi Zhao, Zhituo Chen, Yongqi Ye, Jingye Chen, Yaocheng Shi   +6 more
doaj   +1 more source

Effect of Gate Dielectric Material on the Electrical Properties of MoSe₂-Based Metal–Insulator–Semiconductor Field-Effect Transistor

Crystals, 2022
In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN).
Abdelkader Abderrahmane, Pan-Gum Jung, Changlim Woo, Pil Ju Ko   +3 more
doaj   +1 more source

A compact silicon-on-insulator polarization splitter [PDF]

IEEE Photonics Technology Letters, 2005
A compact directional coupler-based polarization splitter is designed and realized using silicon-on-insulator (SOI) waveguides. Even though silicon does not have any material birefringence, the high index contrast obtained in the SOI platform and reduced waveguide dimensions makes it possible to induce significant birefringence.
Kiyat I., Aydinli, A., Dagli, N.
openaire   +4 more sources

Formation of silicon carbide nanowire on insulator through direct wet oxidation

, 2017
Silicon carbide on insulator is a promising platform for electronic devices at high temperature as well as for opto-electrical applications. Utilizing the chemical inertness of SiC, this work presents a novel technique to form cubic-silicon carbide (3C ...
Nguyen, Nam-Trung, Dinh, Toan, Nam-Trung Nguyen, Nguyen, Tuan-Khoa, Takahiro Namazu, Ginnosuke Ina, Tuan-Khoa Nguyen, Dao, Dzung Viet, Namazu, Takahiro, Dzung Viet Dao, Qamar, Afzaal, Hoang-Phuong Phan, Kozeki, Takahiro, Phan, Hoang-Phuong, Ina, Ginnosuke, Takahiro Kozeki, Toan Dinh, Afzaal Qamar, Dzung, Viet Dao, Nam-Trung, Nguyen, Hoang-Phuong, Phan, Tuan-Khoa, Nguyen, Toan, Dinh   +22 more
core   +1 more source