Results 51 to 60 of about 47,957,654 (314)

Design of an Athermal Interferometer Based on Tailored Subwavelength Metamaterials for On-Chip Microspectrometry

IEEE Photonics Journal, 2019
Temperature dependence is one of the main challenges of the silicon-on-insulator platform due to the large thermo-optic coefficient of its core material.
Umair A. Korai, Alaine H. Bermello, Michael J. Strain, Ivan Glesk, Aitor V. Velasco   +4 more
doaj   +1 more source

Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer

Advanced Functional Materials, EarlyView.
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero, Meghna Jha, Elsa Veronica Flores‐Vela, Joost Kimpel, Andreas Schaefer, Jiali Guo, Jesika Asatryan, Alberto Peinador Veiga, Shuichi Haraguchi, Per‐Anders Carlsson, Jaime Martín, Mariano Campoy‐Quiles, Christian Müller   +12 more
wiley   +1 more source

Modeling and Analysis of SOI Gratings-Based Opto-Fluidic Biosensor for Lab-on-a-Chip Applications

Photonics, 2019
The design, modeling, and analysis of a silicon-on-insulator (SOI) grating coupler integrated with a microfluidic channel for lab-on-a-chip applications are presented. The grating coupler was designed to operate at 1310 nm.
Venkatesha Muniswamy, Prasant Kumar Pattnaik, Narayan Krishnaswamy   +2 more
doaj   +1 more source

Ultrasensitive and fast photoresponse in graphene/silicon-on-insulator hybrid structure by manipulating the photogating effect

Nanophotonics, 2020
The hybrid structures of graphene with semiconductor materials based on photogating effect have attracted extensive interest in recent years due to the ultrahigh responsivity.
Jiang Hao, Nie Changbin, Fu Jintao, Tang Linlong, Shen Jun, Sun Feiying, Sun Jiuxun, zhu Meng, Feng Shuanglong, Liu Yang, Shi Haofei, Wei Xingzhan   +11 more
doaj   +1 more source

Monolithic beam splitter in silicon-on-insulator

Optics Express, 2004
Inductively coupled plasma reactive ion etching is used to fabricate the monolithic beam splitter in silicon-on-insulator wafer. The near-field image shows that the symmetric 1x2 T-branch works well. The rms roughness of the corner mirror surfaces is measured by atomic force microscope, and the sidewall surface roughness of rib waveguide is evaluated ...
Yongjin, Wang, Xinli, Cheng, Zhilang, Lin, Fan, Gao, Feng, Zhang   +4 more
openaire   +2 more sources

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

Advanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa, Lin‐Ding Yuan, Stephen D. Wilson, James M. Rondinelli   +3 more
wiley   +1 more source

Locally erasable couplers for optical device testing in silicon on insulator

, 2014
Wafer scale testing is critical to reducing production costs and increasing production yield. Here we report a method that allows testing of individual optical components within a complex optical integrated circuit.
Payne, D.N.R., Reed, G.T., Topley, R.P., Mashanovich, G. Z., Peacock, A.C., Mailis, S., Mashanovich, G.Z., Gardes, F. Y., Peacock, A. C., Martinez-Jimenez, G., Gardes, F.Y., Thomson, D. J., Payne, D. N. R., Reed, G. T., Topley, R., O'Faolain, L., Healy, N., Thomson, D.J.   +17 more
core   +1 more source

Dimension Effect on Breakdown Voltage of Partial SOI LDMOS

IEEE Journal of the Electron Devices Society, 2017
Dimension effect on breakdown voltage (BV) of lateral double-diffused metal-oxide–semiconductor field-effect transistor in partial silicon-on-insulator (PSOI) technology is comprehensively studied.
Yue Hu, Huazhen Liu, Qianqian Xu, Luwen Wang, Jing Wang, Shichang Chen, Peng Zhao, Ying Wang, Gaofeng Wang   +8 more
doaj   +1 more source

Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina

Advanced Functional Materials, EarlyView.
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand, Kaja H. Hiorth, David Gao, Valeri Afanas'ev, Jaakko Akola, Alexander L. Shluger   +5 more
wiley   +1 more source

Hyperuniform disordered waveguides and devices for near infrared silicon photonics

Scientific Reports, 2019
We introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform ...
Milan M. Milošević, Weining Man, Geev Nahal, Paul J. Steinhardt, Salvatore Torquato, Paul M. Chaikin, Timothy Amoah, Bowen Yu, Ruth Ann Mullen, Marian Florescu   +9 more
doaj   +1 more source