Results 61 to 70 of about 41,361 (307)

Dimension Effect on Breakdown Voltage of Partial SOI LDMOS

open access: yesIEEE Journal of the Electron Devices Society, 2017
Dimension effect on breakdown voltage (BV) of lateral double-diffused metal-oxide–semiconductor field-effect transistor in partial silicon-on-insulator (PSOI) technology is comprehensively studied.
Yue Hu   +8 more
doaj   +1 more source

Modulating Two‐Photon Absorption in a Pyrene‐Based MOF Series: An In‐Depth Investigation of Structure–Property Relationships

open access: yesAdvanced Functional Materials, EarlyView.
This study investigates H4TBAPy‐based metal–organic frameworks (MOFs) ‐ NU‐1000, NU‐901, SrTBAPy, and BaTBAPy ‐ for multiphoton absorption (MPA) performance. It observes topology‐dependent variations in the 2PA cross‐section, with BaTBAPy exhibiting the highest activity.
Simon N. Deger   +10 more
wiley   +1 more source

Silicon grating structures for optical fiber interfacing and III-V/silicon opto-electronic components [PDF]

open access: yes, 2013
In this paper, we review our work on efficient, broadband and polarization independent interfaces between a silicon-on-insulator photonic IC and a single-mode optical fiber based on grating structures.
Baets, Roel   +8 more
core   +1 more source

Tuning the Dielectric Properties of Individual Clay Nanosheets by Interlayer Composition: Toward Nano‐Electret Materials

open access: yesAdvanced Functional Materials, EarlyView.
The dielectric properties of clays are studied on the level of individual monolayers and functional double stacks. The material breakdown characteristics and charge storage performance are analyzed. For illustration, a defined charge pattern representing a cuneiform character is produced, written into a microscopic clay tile, referencing the origins of
Sebastian Gödrich   +6 more
wiley   +1 more source

Mid-IR heterogeneous silicon photonics [PDF]

open access: yes, 2014
In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the ...
Baets, Roel   +29 more
core   +1 more source

Hyperuniform disordered waveguides and devices for near infrared silicon photonics

open access: yesScientific Reports, 2019
We introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform ...
Milan M. Milošević   +9 more
doaj   +1 more source

A compact silicon-on-insulator polarization splitter [PDF]

open access: yesIEEE Photonics Technology Letters, 2005
A compact directional coupler-based polarization splitter is designed and realized using silicon-on-insulator (SOI) waveguides. Even though silicon does not have any material birefringence, the high index contrast obtained in the SOI platform and reduced waveguide dimensions makes it possible to induce significant birefringence.
Kiyat I., Aydinli, A., Dagli, N.
openaire   +5 more sources

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

open access: yesAdvanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

A variable delay integrated receiver for differential phase-shift keying optical transmission systems [PDF]

open access: yes, 2012
An integrated variable delay receiver for DPSK optical transmission systems is presented. The device is realized in silicon-on-insulator technology and can be used to detect DPSK signals at any bit-rates between 10 and 15 Gbit ...
Bassi, P   +9 more
core  

Drag of electron–hole bilayer in silicon-on-insulator metal-oxide-semiconductor field-effect transistor at low temperature

open access: yesApplied Physics Express
Drag between the electron and the hole layers formed in a silicon-on-insulator MOSFET, with the estimated interlayer distance as small as 18 nm, is investigated.
Nabil Ahmed   +4 more
doaj   +1 more source

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