Results 61 to 70 of about 67,402,179 (253)

Locally erasable couplers for optical device testing in silicon on insulator

open access: yes, 2014
Wafer scale testing is critical to reducing production costs and increasing production yield. Here we report a method that allows testing of individual optical components within a complex optical integrated circuit.
Payne, D.N.R.   +17 more
core   +1 more source

Lasing in silicon–organic hybrid waveguides

open access: yesNature Communications, 2016
On-chip light sources for silicon photonic circuits remain a challenge since the indirect bandgap of silicon prevents efficient light emission. The authors demonstrate that lasing can be achieved by combining standard silicon-on-insulator waveguides with
Dietmar Korn   +9 more
doaj   +1 more source

A Novel p-LDMOS Additionally Conducting Electrons by Control ICs

open access: yesIEEE Journal of the Electron Devices Society, 2019
A silicon-on-insulator (SOI) p-channel lateral double-diffused MOSFET (p-LDMOS), conducting not only holes but also electrons, is proposed and investigated by TCAD simulations. Its most important advantage is the greatly improved relationship between the
Songnan Guo, Xing Bi Chen
doaj   +1 more source

Embedded Ferroelectric Nanoclusters Can Drive Polarization Reversal in a Non‐Ferroelectric Polar Film via the Proximity Effect

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric nanoclusters create local internal fields in a normally non‐switchable polar film because of polarization mismatch at their interfaces. That field opposes polarization in the regions with larger polarization and reinforces polarization in the regions with smaller polarization.
Anna N. Morozovska   +5 more
wiley   +1 more source

Silicon electro-optic modulator [PDF]

open access: yes, 2012
Electronic redacted version excludes material for which permission has not been granted by the rights holderIn recent years, as on-chip data transmission has increased dramatically, much time and effort has been devoted to the development of compact ...
Dong, Fengqiao
core   +2 more sources

Silicon Racetrack Resonators and EIT: A Pathway to Enhanced Near Infrared Gas Sensing

open access: yesECS Sensors Plus
This work presents the design, fabrication, and experimental validation of a silicon-on-insulator (SOI) optical platform exploiting electromagnetically induced transparency (EIT) for enhanced near-infrared (NIR) refractive index sensing.
Sarah Shafaay   +3 more
doaj   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

open access: yesAdvanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen   +5 more
wiley   +1 more source

Label-Free Biosensing With a Slot-Waveguide-Based Ring Resonator in Silicon on Insulator

open access: yesIEEE Photonics Journal, 2009
We present a slot-waveguide-based ring resonator in silicon on insulator (SOI) with a footprint of only 13 mum times 10 mum, fabricated with optical lithography.
Tom Claes   +5 more
doaj   +1 more source

Semiconducting Polymers Post‐Functionalized With Ureido‐Pyrimidinone for Robust Stretchable Transistors

open access: yesAdvanced Functional Materials, EarlyView.
The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah   +7 more
wiley   +1 more source

Voltage oscillations in SOI transistors as generators

open access: yesТехнологія та конструювання в електронній апаратурі, 2005
Voltage and current oscillations in field-effect transistors fabricated using silicon-on-insulator (SOI) technology have been investigated. It has been shown that by changing the transistor’s supply conditions, the oscillation frequency can be varied ...
G. K. Ninidze   +3 more
doaj  

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