Results 81 to 90 of about 47,957,654 (314)
Voltage oscillations in SOI transistors as generators
Технологія та конструювання в електронній апаратурі, 2005 Voltage and current oscillations in field-effect transistors fabricated using silicon-on-insulator (SOI) technology have been investigated. It has been shown that by changing the transistor’s supply conditions, the oscillation frequency can be varied ...
G. K. Ninidze +3 more
doaj
Label-Free Biosensing With a Slot-Waveguide-Based Ring Resonator in Silicon on Insulator
IEEE Photonics Journal, 2009 We present a slot-waveguide-based ring resonator in silicon on insulator (SOI) with a footprint of only 13 mum times 10 mum, fabricated with optical lithography.
Tom Claes +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Cricket Inspired High Efficiency MEMS Speakers
Proceedings, 2017 We report on the realization of a biomimetic MEMS speaker inspired by field crickets. This speaker is at least five times thinner and four times more efficient than the current dynamic speakers used in portable electronics.
Meera Garud +4 more
doaj +1 more source
Porous Silicon on Insulator Technology
Journal of Scientific Research and Reports, 2022 In this research, the structure, optical, and electrical properties of porous silicon prepared by electrochemical etching at current density 50 mA /cm2 with etching time 10 min, before and after rapid thermal oxidation process (RTO) at different oxidation temperature from (500-700) Ċ and constant oxidation time 60 s. Under optimum conditions, the pore
openaire +1 more source
Advanced Functional Materials, EarlyView.Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo +2 more
wiley +1 more source
Monte Carlo simulation of silicon-germanium transistors [PDF]
, 2002 Self-consistent Monte Carlo simulation studies of n-channel Si/SiGe modulation doped field effect transistors (MODFETs) and silicon-on-insulator lateral bipolar junction transistors (SOI- LBJTs) are reported in this thesis. As a preliminary to the device
Yangthiasong, Anucha +1 more
core
Advanced Functional Materials, EarlyView.Conventional doping of P3HT with F4TCNQ results in poor charge transport. However, when F4TCNQ is exchanged with LiTFSI, the transport characteristics are greatly enhanced. We find the increase in charge transport is directly related to an increase in the mesoscale ordering of P3HT, resulting in longer and better‐connected transport pathways.
Quynh M. Duong +9 more
wiley +1 more source
Silicon photonic modulators for the mid-infrared
, 2013 Mid-infrared group-IV material photonics is an emerging field, which aims to migrate techniques used for near-infrared silicon photonics to longer wavelengths, and to address applications in areas such as environmental and bio-chemical sensing, homeland ...
Nedeljković, Miloš
core
Mid-infrared photonics devices in SOI
In this paper we present silicon photonics devices designed for the 3-4µm wavelength region including waveguides, MMIs, ring resonators and Mach-Zehnder interferometers. The devices are based on silicon on insulator (SOI) platform. We show that 400-500nm
Reed, G.T. +11 more
core +1 more source