Results 131 to 140 of about 70,198,860 (309)
High-speed electrooptical VOA integrated in silicon-on-insulator
, 2003 In this paper, we present simulation results of an electrooptical variable optical attenuator (VOA) inte-grated in silicon-on-insulator waveguide. The device is functionally based on free carriers absorption toachieve attenuation. Beam propagation method
Liu Zhongli +3 more
core
Advanced Materials, EarlyView.Self‐invalidating multilayer physical unclonable functions (PUFs) integrate fingerprint‐like metal nanopattern bilayers from block copolymer templates with highly reactive reduced graphene oxide (rGO) interlayers. This tamper‐responsive architecture blocks all unauthorized physical and chemical replication attempts while autonomously deactivating ...
Gyu Hui Jo +7 more
wiley +1 more source
A Concept of an Integral Optical Pressure Sensor
Приборы и методы измеренийToday, an expanding application of automatic systems demands research and development of novel types of sensors suitable for special conditions. Specifically, microelectromechanical pressure sensors are among of the most widely implemented devices.
E. S. Barbin +5 more
doaj +1 more source
Silicon-on-Insulator Optical Waveguide Pressure Sensor Based on Mach-Zehnder Interferometer. [PDF]
Micromachines (Basel), 2022 Li C, Zhang C, Yang L, Guo F.
europepmc +1 more source
2 x 2 electrooptical switch in silicon-on-insulator waveguide
, 2003 A 2 x 2 Mach-Zehnder interferometer electrooptical switch integrated in silicon-on-insulator using multimode interference 3-dB couplers as splitter and combiner has been proposed and fabricated.
Yan QF Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China. +6 more
core
Sub‐nm2 Ferroelectric Domains via Charged 180° Walls in ZrO2
Advanced Materials, EarlyView.Ferroelectric ZrO2${\rm ZrO}_2$ thin films host closely spaced charged 180∘$^{\circ }$ domain walls that vertically compress polar domains beyond their lateral half‐unit‐cell limit. These head‐to‐head and tail‐to‐tail walls show distinct bulk‐like structures, natural oxygen‐mediated stabilization, and highly asymmetric mobility, highlighting new ...
Nashrah Afroze +33 more
wiley +1 more source
MicromachinesThe continuous scaling down of MOSFETs is one of the present trends in semiconductor devices to increase device performance. Nevertheless, with scaling down beyond 22 nm technology, the performance of even the newer nanodevices with multi-gate ...
Potaraju Yugender +5 more
doaj +1 more source
Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. [PDF]
Micromachines (Basel), 2023 Yin C, Gao T, Wei H, Chen Y, Liu H.
europepmc +1 more source
Silicon Photonics Beyond the Silicon-on-Insulator Platform (Invited)
, 2015 The silicon-on-insulator platform has several shortcomings for near- and mid-infrared integrated photonics. Heterogeneous platforms that integrate silicon with lithium niobate, tantalum pentoxide, chalcogenide glass and silicon nitride, as well as all ...
Fathpour, Sasan, Sasan Fathpour
core +1 more source
Advanced Materials, EarlyView.We report perovskite photodetectors with record specific detectivities exceeding 1013 Jones with a novel molecular design strategy to functionalize self‐assembled monolayers (SAMs) with ferrocene (Fc) derivatives. Fc‐SAM‐based devices also exhibit strong operational stability and enable data transmission rates exceeding 1 Mbps in a LiFi system ...
Edoardo Angela +10 more
wiley +1 more source