Results 141 to 150 of about 47,957,654 (314)

Silicon Nitride-on-Insulator Photonics Polarisation Convertor

Приборы и методы измерений
Photonic integrated circuits constitute a vital component of contemporary telecommunications systems, facilitating traffic management and reducing energy consumption.
D. M. Mokhovikov, E. S. Barbin, T. G. Nesterenko, A. A. Talovskaya, A. S. Myrzakhmetov, I. V. Kulinich, P. F. Baranov, D. P. Il’yaschenko   +7 more
doaj   +1 more source

Silicon-on-Insulator Optical Waveguide Pressure Sensor Based on Mach-Zehnder Interferometer. [PDF]

Micromachines (Basel), 2022
Li C, Zhang C, Yang L, Guo F.
europepmc   +1 more source

One‐Dimensional Materials Supported in Two‐Dimensional Van der Waals Metal–Organic Frameworks with Optical Anisotropy Switching via Twist‐Engineering

Advanced Materials, EarlyView.
We introduce a molecular strategy to assemble one‐dimensional (1D) materials into two‐dimensional (2D) van der Waals metal–organic frameworks (MOFs). Crystals of [FeX(pzX)(bpy)] (X = Cl, F) form anisotropic 2D layers that can be mechanically exfoliated into thin sheets.
Eleni C. Mazarakioti, Carla Boix‐Constant, Iván Gómez‐Muñoz, Diego López‐Alcalá, Sergio Revuelta, Marco Ballabio, Vasileios Balos, José J. Baldoví, Enrique Cánovas, Josep Canet‐Ferrer, Guillermo Mínguez Espallargas, Samuel Mañas‐Valero, Eugenio Coronado   +12 more
wiley   +1 more source

LDMOS transistors on 150 mm silicon-on-polycrystalline-silicon carbide hybrid substrates

, 2011
Silicon based RF and power devices need a substrate that conducts heat better than conventional SOI-substrates. Here, the silicon dioxide insulator and the silicon substrate as in a SOI-wafer, are replaced by silicon carbide (SiC) which has higher ...
Norström, Hans,, Vestling, Lars,, Lotfi, Sara,, Vallin, Örjan,, Olsson, Jörgen,, Li, Ling-Guang,   +5 more
core  

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel

Micromachines
The continuous scaling down of MOSFETs is one of the present trends in semiconductor devices to increase device performance. Nevertheless, with scaling down beyond 22 nm technology, the performance of even the newer nanodevices with multi-gate ...
Potaraju Yugender, Rudra Sankar Dhar, Swagat Nanda, Kuleen Kumar, Pandurengan Sakthivel, Arun Thirumurugan   +5 more
doaj   +1 more source

Mono- and Bilayer Graphene/Silicon Photodetectors Based on Optical Microcavities Formed by Metallic and Double Silicon-on-Insulator Reflectors: A Theoretical Investigation. [PDF]

Micromachines (Basel), 2023
Crisci T, Moretti L, Gioffrè M, Casalino M.   +3 more
europepmc   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Ultra-broadband on-chip beam focusing enabled by GRIN metalens on silicon-on-insulator platform. [PDF]

Nanophotonics, 2022
Shen J, Zhang Y, Dong Y, Xu Z, Xu J, Quan X, Zou X, Su Y.   +7 more
europepmc   +1 more source

Self‐Assembled Monolayers in p–i–n Perovskite Solar Cells: Molecular Design, Interfacial Engineering, and Machine Learning–Accelerated Material Discovery

Advanced Materials, EarlyView.
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley   +1 more source

Compact 3-dB tapered multimode interference coupler in silicon-on-insulator

, 2001
We have fabricated a compact 3-dB multimode interference coupler with a large silicon-on-insulator cross section. To reduce the length of the usual symmetric interference multimode interference coupler, we propose using a parabolically tapered structure.
Wei HZ, Wei HZ,Acad Sinica,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China., Zhang XF, Liu ZL, Yu JZ   +4 more
core