Integration of Er<sup>3+</sup> Emitters in Silicon-on-Insulator Nanodisk Metasurface. [PDF]
Bader J +6 more
europepmc +1 more source
Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris +7 more
wiley +1 more source
Silicon-on-insulator thermo-optic variable attenuator module with fast response
A thermo-optic variable optical attenuator module composed of a silicon-on-insulator attenuator chip and driving circuit was designed and fabricated. The module exhibited a maximum attenuation of 21.8 dB and a response time of 10 mu s.
Li YT +4 more
core
Volatile and non-volatile nano-electromechanical switches fabricated in a CMOS-compatible silicon-on-insulator foundry process. [PDF]
Li Y +11 more
europepmc +1 more source
Water harvesting, radiative cooling, and interfacial solar evaporation are fundamentally governed by coupled heat, mass, and light transport processes. These processes are mediated by pore architecture, including pore size, connectivity, and hierarchical organization.
Dejan J. Trajkovski +5 more
wiley +1 more source
High Sensitivity Design for Silicon-On-Insulator-Based Asymmetric Loop-Terminated Mach-Zehnder Interferometer. [PDF]
Butt MA.
europepmc +1 more source
One-Stage Formation of Two-Dimensional Photonic Crystal and Spatially Ordered Arrays of Self-Assembled Ge(Si) Nanoislandson Pit-Patterned Silicon-On-Insulator Substrate. [PDF]
Novikov AV +10 more
europepmc +1 more source
Applied here for the first time to a 2D material, high‐resolution synchrotron x‐ray Fourier transform holography directly images topological spin textures in Fe3GeTe2. Combined with atomistic tight‐binding simulations including itinerant electrons and Rashba spin‐orbit coupling, the approach reveals labyrinth, skyrmion, and mixed phases, and uncovers ...
Sourav Chowdhury +16 more
wiley +1 more source
Fabrication and characterisation of novel Ge MOSFETs [PDF]
As high-k dielectrics are introduced into commercial Si CMOS (Complimentary Metal Oxide Semiconductor) microelectronics, the 40 year channel/dielectric partnership of Si/SiO2 is ended and the door opened for silicon to be replaced as the active channel ...
Beer, Chris
core
Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm<sup>2</sup>. [PDF]
Song CW, Lee T, Kim D, Kyoung S, Woo S.
europepmc +1 more source

