Results 161 to 170 of about 70,198,860 (309)

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration. [PDF]

open access: yesMicromachines (Basel), 2021
Hsu LH   +11 more
europepmc   +1 more source

Culinary Chemistry as a Platform for Interfacial Materials Design

open access: yesAdvanced Materials Interfaces, EarlyView.
Culinary processes control interfaces through heating, shear, gelation, and molecular transport. This Review connects selected gastronomic examples with food‐derived nanomaterials, plasmonic sensing, anthocyanin photovoltaics, and intelligent packaging. Original agar‐based plasmonic films illustrate the proposed translation.
Josep Moreno   +12 more
wiley   +1 more source

Integrated tapered MMI couplers in the silicon-on-insulator technology

open access: yes, 2001
The authors have designed and fabricated 2x2 parabolically tapered MMI coupler with large cross-section and large space between difference ports using Silicon-on-Insulator ( SOI) technology.
Wei HZ   +7 more
core  

High Energy Photon Induced Defect Engineering in Ultra‐Thin Indium Oxide Transistors for BEOL‐Compatible Logic Circuits

open access: yesAdvanced Materials Interfaces, EarlyView.
Xenon flash lamp annealing modulates oxygen‐vacancy states in 1‐nm‐thick ALD In2O3 transistors within a single 139 µs pulse. The photon‐induced defect engineering shifts the threshold voltage, improves bias‐stress stability, and narrows device‐to‐device variation across 64 devices. Combining pristine and treated transistors yields NMOS inverters with a
Sung Jin Park   +5 more
wiley   +1 more source

Nano-layer structure of silicon-on-insulator materials

open access: yes, 2003
Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits.
Chen J,Chinese Acad Sci,Shanghai Inst Microsyst & Informat Technol,Ion Beam Lab,865 Changning Rd,Shanghai 200050,Peoples R China.   +8 more
core   +1 more source

Raman Spectroscopy-Based Quality Control of "Silicon-On-Insulator" Nanowire Chips for the Detection of Brain Cancer-Associated MicroRNA in Plasma. [PDF]

open access: yesSensors (Basel), 2021
Malsagova KA   +16 more
europepmc   +1 more source

1x8 cascaded multimode interference splitter in silicon-on-insulator

open access: yes, 2004
A cascaded multimode interference 1 x 8 power splitter is proposed and fabricated in silicon-on-insulator material. The device consists of seven 1 x 2 power splitters arranged in a tree configuration.
Wang, ZT, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.   +5 more
core  

Beyond Passivation: Designing Structurally Tailored Artificial Interphases for High‐Energy Lithium‐Based Anodes

open access: yesAdvanced Materials Interfaces, EarlyView.
This review outlines critical engineering design rules for building artificial protective coatings on next‐generation lithium metal and silicon battery anodes. It highlights how balancing structural flexibility with strict electronic and ionic transport limits prevents early battery failure.
Surin Gupte, Vilas G. Pol
wiley   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

open access: yesAdvanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang   +3 more
wiley   +1 more source

A NEW TYPE OF SILICON-ON-INSULATOR WITH A PERFECT SURFACE SILICON LAYER

open access: yes, 1993
A novel silicon structure consisting of a silicon-on-defect layer (SODL), with enhanced surface Hall mobility in the surface layer on a buried defect layer (DL), has been discovered [J. Li, Nucl. Instr. and Meth. B59/60 (1991) 1053].
ZHU JC   +3 more
core  

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