Results 191 to 200 of about 47,957,654 (314)
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang +10 more
wiley +1 more source
EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR
From a single process, GaN layers were laterally overgrown on maskless stripe-patterned (111) silicon-on-insulator (SOI) substrates by metalorganic chemical vapor deposition.
Yang H +9 more
core
High Sensitivity Design for Silicon-On-Insulator-Based Asymmetric Loop-Terminated Mach-Zehnder Interferometer. [PDF]
Butt MA.
europepmc +1 more source
Inspired by the octopus and the golden wheel spider, soft robots with liquid crystal elastomer arc fibers as appendages are fabricated to transcend surface constraints through an elevated center of mass and minimal contact footprints. By leveraging curvature‐encoded deformation‐recovery cycles, these robots exhibit contractile, torsional, and flexural ...
Jong Bin Kim +5 more
wiley +1 more source
Silicon wafers such as Silicon on Insulator (SOI) and strained silicon on Insulator (sSOI) are the essential and basic materials of advanced microelectronic devices.
Idrisi, Hanan
core
A Novel Silicon on Diamond Structure to Improve Drain Induced Barrier Lowering
A silicon on diamond structure to improve DIBL is presented. The electrical field penetration through the buried insulator of diamond degrades the DIBL. In the new structure, a second, double insulating material, e.g.
Arash Daghighi +2 more
doaj
Development of silicon-on-insulator direct electron detector with analog memories in pixels for sub-microsecond imaging. [PDF]
Ishida T +6 more
europepmc +1 more source
Phase Diagrams Enable Solid‐State Battery Design
Batteries are non‐equilibrium devices with inherent thermodynamic driving forces to react at interfaces, regardless of kinetics or operating conditions. Chemical potential mismatches across interfaces are dissipated via interfacial reactions. In this work, it is illustrated how phase diagrams and chemical potential maps predict degradation pathways but
Nathaniel L. Skeele, Matthias T. Agne
wiley +1 more source
150 mm Silicon-on-polycrystalline-Silicon Carbide
150 mm Silicon-on-polycrystallin-Silicon Carbie (poly-SiC) bybrid substrate, without intermediate oxide layers have been realised by hydrophilic wafer bonding of SOI- and poly-SiC wafers. A novel rapid thermal treatment step was introduced before furnace
Norström, Hans, +4 more
core
Compact inverse designed vertical coupler with bottom reflector for sub-decibel fiber-to-chip coupling on silicon on insulator platform. [PDF]
Huang SY, Barz S.
europepmc +1 more source

