Results 191 to 200 of about 70,198,860 (309)

A Novel Silicon on Diamond Structure to Improve Drain Induced Barrier Lowering

Majlesi Journal of Electrical Engineering
A silicon on diamond structure to improve DIBL is presented. The electrical field penetration through the buried insulator of diamond degrades the DIBL. In the new structure, a second, double insulating material, e.g.
Arash Daghighi, Jafar Hoseini-Teshnizi, GholamReza Amini   +2 more
doaj  

Development of silicon-on-insulator direct electron detector with analog memories in pixels for sub-microsecond imaging. [PDF]

Microscopy (Oxf)
Ishida T, Sugie K, Miyoshi T, Ishida Y, Saitoh K, Arai Y, Kuwahara M.   +6 more
europepmc   +1 more source

Recent Advances in Light‐Addressable Electrochemistry for Spatially Resolved Applications

Advanced Materials Technologies, EarlyView.
This comprehensive review highlights light‐addressable electrochemistry as a powerful tool that uses light to control localized chemical reactions on unstructured semiconductor surfaces. The work evaluates advanced strategies to optimize electrode materials for enhanced spatial resolution and stability. Furthermore, it showcases diverse applications in
Nhi Trang Vo, Sina Jamali, Nam‐Trung Nguyen   +2 more
wiley   +1 more source

Suspended Slot Membrane Waveguide Based on Germanium-on-Silicon-on-Insulator at λ = 4.23 µm for CO₂ Monitoring. [PDF]

Micromachines (Basel)
Butt MA, Piramidowicz R.
europepmc   +1 more source

Stress evolution influenced by oxide charges on GaN metal-organic chemical vapor deposition on silicon-on-insulator substrate

, 2007
GaN epilayers have been deposited on silicon-on-insulator (SOI) and bulk silicon substrates. The stress transition thickness and the initial compressive stress of a GaN epilayer on the SOI substrate are larger than those on the bulk silicon substrate, as
Yang H, Zhu J, Chen J, Wang X, Wang J, Sun, J, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 电子邮箱地址: jiayinsun@mail.sim.ac.cn, Sun J, Liu W   +7 more
core  

Conductive Tin Oxide Under the Thermal Budget of Perovskite/TOPCon Tandems: Toward Indium‐Free Contacts

Advanced Materials Technologies, EarlyView.
This work demonstrates that achieving conductive undoped SnOx contacts required careful tailoring of oxygen vacancy (VO) tuning and defect engineering. Controlling oxygen deposition pressure and low‐temperature annealing (300°C) optimizes defect stoichiometry and mitigates carrier scattering. This low thermal budget approach significantly enhances Hall
Paul Llontop, Mario Hanser, Matthew Wright, Soumyajit Maitra, Eloy J. Marcelis, Jana‐Isabelle Polzin, Martin Bivour, David C. Grinter, Pilar Ferrer, Iris C. G. van den Bosch, Christoph Baeumer, Ruy S. Bonilla, Armin Richter, Monica Morales‐Masis   +13 more
wiley   +1 more source

Compact inverse designed vertical coupler with bottom reflector for sub-decibel fiber-to-chip coupling on silicon on insulator platform. [PDF]

Sci Rep
Huang SY, Barz S.
europepmc   +1 more source

Angle-Sensitive Detector Based on Silicon-On-Insulator Photodiode Stacked with Surface Plasmon Antenna. [PDF]

Sensors (Basel), 2020
Nagarajan A, Hara S, Satoh H, Panchanathan AP, Inokawa H.   +4 more
europepmc   +1 more source

Highly Conductive and Transparent Coatings via Low‐Temperature Hydroiodic Acid Vapor Treatment of Oxo‐Graphene Thin Films

Advanced Materials Technologies, EarlyView.
The double self‐assembly (DSA) method applied to oxo‐graphene (oxo‐G) flakes followed by hydroiodic acid (HI) vapor treatment and low‐temperature annealing yields highly conductive, optically transparent thin films with the potential for applications in electronic and optoelectronic devices.
Arindam Konar, David Kaiser, Guobin Jia, Hamid Reza Rasouli, Janis Köster, Christof Neumann, Andrea Dellith, Uwe Hübner, Christian E. Halbig, Siegfried Eigler, Ute Kaiser, Benjamin Dietzek‐Ivanšić, Jonathan Plentz, Andrey Turchanin   +13 more
wiley   +1 more source

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs. [PDF]

Micromachines (Basel)
Yan Z, Liu H, Huang M, Wang S, Chen S, Zhou X, Huang J, Liu C.   +7 more
europepmc   +1 more source