Results 211 to 220 of about 35,518 (242)
Some of the next articles are maybe not open access.
Physics Bulletin, 1985
There has always been interest in the growth of silicon–on–insulators (soi), usually on sapphire, to give increased resistance to nuclear radiation for space and military applications. However, recently, new techniques for growth have been researched, and the silicon device interest has widened as the potential of insulating substrates for use with ...
openaire +2 more sources
There has always been interest in the growth of silicon–on–insulators (soi), usually on sapphire, to give increased resistance to nuclear radiation for space and military applications. However, recently, new techniques for growth have been researched, and the silicon device interest has widened as the potential of insulating substrates for use with ...
openaire +2 more sources
Development of silicon-on-insulator waveguide technology
SPIE Proceedings, 2004An overview of the present silicon-on-insulator (SOI) waveguide technology is given and supplemented with an extensive set of theory and simulation results. Characteristics of slab-, rectangular- and ridge waveguides in SOI are explained. In particular, the number of modes and the single-mode conditions are carefully analyzed.
Harjanne, Mikko +5 more
openaire +4 more sources
Crystalline silicon on insulators by graphoepitaxy
1979 International Electron Devices Meeting, 1979Graphoepitaxy is a new technique that uses artificial surface relief structures to induce crystallographic orientation in thin films. A simple model for graphoepitaxy is presented which predicts that materials that can be deposited on smooth amorphous substrates to produce a crystalline texture can be uniformly oriented by appropriate surface relief ...
Henry I. Smith +3 more
openaire +2 more sources
Optical Characterization of Silicon-On-Insulator
MRS Proceedings, 1996AbstractA new technique, referred to as the “n&k Method”, is used to characterize the thin films comprising Silicon-on-Insulator (SOI). With the “n&k Method”, a non-destructive robust measurement of the thickness of both the crystalline silicon top-layer and the buried oxide under-layer, the spectra of refractive index (n), and extinction ...
A. Auberton-Herve +4 more
openaire +2 more sources
Recrystallization of amorphous silicon on insulator
Materials Chemistry and Physics, 1993Abstract The structure and morphology as well as the etch velocity of silicon on silicon nitride are studied prior to and after zone melting recrystallization by observing the transmission electron micrographs and diffraction patterns.
G.D. Beshkov, N.B. Velchev
openaire +2 more sources
Silicone electrical insulation
Proceedings of the IEE Part A: Power Engineering, 1959Silicone fluids, compounds, rubbers and resins are described in terms of their chemical structure and physical properties, alone or in combination with inorganic insulating materials. There follows a brief review of thermal endurance evaluation and the position of siliconeinsulation in British and other Standards.
openaire +2 more sources
1989
Bulk—Si technology is the technology which has obtained the most impressive results in the last 30 years. It is a mature and well established technology. However, as the demand for high speed, high density circuits increases, the technological processes are becoming more and more sophisticated.
openaire +2 more sources
Bulk—Si technology is the technology which has obtained the most impressive results in the last 30 years. It is a mature and well established technology. However, as the demand for high speed, high density circuits increases, the technological processes are becoming more and more sophisticated.
openaire +2 more sources
A silicon-on-insulator quantum wire
Solid-State Electronics, 1996Thin, narrow silicon-on-insulator n-channel MOSFETs have been fabricated. The drain current characteristics, when measured as a function of gate voltage at low temperature, exhibit a series of oscillations, which is characteristic of current transport in one-dimensional systems (quantum wires). Theoretical calculation of the current oscillations in the
Vincent Bayot +3 more
openaire +2 more sources
2014
Silicon On Insulator-based devices seem to be the best candidates for the ultimate integration of Integrated Circuits on silicon. An overview of the main SOI materials and advantages of SOI for the Nanoelectronics of the next decades is presented. Nanoscale CMOS, emerging and beyond-CMOS nanodevices, based on innovative concepts, technologies and ...
openaire +4 more sources
Silicon On Insulator-based devices seem to be the best candidates for the ultimate integration of Integrated Circuits on silicon. An overview of the main SOI materials and advantages of SOI for the Nanoelectronics of the next decades is presented. Nanoscale CMOS, emerging and beyond-CMOS nanodevices, based on innovative concepts, technologies and ...
openaire +4 more sources
SILICON-ON-INSULATOR MESFETs AT THE 45nm NODE
International Journal of High Speed Electronics and Systems, 2012Metal-semiconductor field-effect-transistors (MESFETs) have been fabricated using a commercially available 45nm silicon-on-insulator (SOI) CMOS foundry with no changes to the process flow. Depending upon the layout dimensions, these n-channel, depletion mode devices can be designed for high current drive (IDSAT≥ 100mA/mm ), high operating frequency ...
Seth J. Wilk +4 more
openaire +2 more sources