Results 21 to 30 of about 18,108 (296)

Investigation on a novel SiC Schottky barrier diode hydrogen sensor with trench-insulator structure

Materials Research Express, 2021
A novel SiC Schottky barrier diode (SBD) hydrogen gas sensor with trench-insulator structure was proposed in this paper. A physical model is built for this hydrogen sensor based on 4H-SiC SBD thermionic emission theory, tunneling effect of carriers ...
Yonglan Qi, Kaiyuan Lai, Haojie Lv, Bao Qi, Yuheng Zhao   +4 more
doaj   +1 more source

Nanoribbon Biosensor-Based Detection of microRNA Markers of Prostate Cancer

Sensors, 2023
Prostate cancer (PC) is one of the major causes of death among elderly men. PC is often diagnosed later in progression due to asymptomatic early stages. Early detection of PC is thus crucial for effective PC treatment.
Yuri D. Ivanov, Kristina A. Malsagova, Kristina V. Goldaeva, Svetlana I. Kapustina, Tatyana O. Pleshakova, Vladimir P. Popov, Andrey F. Kozlov, Rafael A. Galiullin, Ivan D. Shumov, Dmitry V. Enikeev, Natalia V. Potoldykova, Vadim S. Ziborov, Oleg F. Petrov, Alexander Y. Dolgoborodov, Alexander V. Glukhov, Sergey V. Novikov, Victoria K. Grabezhova, Evgeniy S. Yushkov, Vladimir A. Konev, Oleg B. Kovalev, Alexander I. Archakov   +20 more
doaj   +1 more source

Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder Interferometer

Photonics, 2021
In this paper, we propose a compact optical gas sensor based on the widespread silicon-on-insulator (SOI) technology, operating in the near-infrared (NIR) region around the 1.55 µm wavelength.
Raghi S. El Shamy, Mohamed A. Swillam, Mohamed M. ElRayany, Alaa Sultan, Xun Li   +4 more
doaj   +1 more source

Electrothermally-Actuated Micromirrors with Bimorph Actuators—Bending-Type and Torsion-Type

Sensors, 2015
Three different electrothermally-actuated MEMS micromirrors with Cr/Au-Si bimorph actuators are proposed. The devices are fabricated with the SOIMUMPs process developed by MEMSCAP, Inc. (Durham, NC, USA).
Cheng-Hua Tsai, Chun-Wei Tsai, Hsu-Tang Chang, Shih-Hsiang Liu, Jui-Che Tsai   +4 more
doaj   +1 more source

Enhanced Sensitivity of Silicon-On-Insulator Surface Plasmon Interferometer With Additional Silicon Layer

IEEE Photonics Journal, 2011
It is theoretically found that by adding a thin silicon layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon on insulator (SOI), a sensitivity enhancement of up to 2500 nm/refractive index units (RIUs ...
Khai Q. Le, Peter Bienstman
doaj   +1 more source

Evanescently Coupled Rectangular Microresonators in Silicon-on-Insulator with High Q-Values: Experimental Characterization

Photonics, 2017
We report on evanescently coupled rectangular microresonators with dimensions up to 20 × 10 μm2 in silicon-on-insulator in an add-drop filter configuration.
Manuel Mendez-Astudillo, Hideaki Okayama, Hirochika Nakajima   +2 more
doaj   +1 more source

Effect of Gate Dielectric Material on the Electrical Properties of MoSe₂-Based Metal–Insulator–Semiconductor Field-Effect Transistor

Crystals, 2022
In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN).
Abdelkader Abderrahmane, Pan-Gum Jung, Changlim Woo, Pil Ju Ko   +3 more
doaj   +1 more source

An Integrated Evanescent Field Sensor for the Simultaneous Measurement of Layer Refractive Index and Thickness

Sensors, 2021
A novel integrated sensor for the simultaneous measurement of layer refractive index and thickness based on evanescent fields is proposed. The theoretical limits for the accuracy of the sensor were examined for the example of a TiO2 layer.
Matthias Jäger, Jürgen Bruns, Jessica Schneidewind, Cay Pinnow, Hassan Gargouri, Klaus Petermann   +5 more
doaj   +1 more source

Junctionless nanosheet gate‐all‐around transistors fabricated on void embedded silicon on insulator substrate

Electronics Letters, 2023
A novel junctionless gate‐all‐around (GAA) transistor with ultrathin nanosheet GAA channel and self‐aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler ...
Zhiqiang Mu, Hongyang Zhou, Yumeng Yang, Qiang Liu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source

Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength

Electronics Letters
This work intends to investigate the impact of silicon layer thickness and substrate biasing on the UV photodetection efficiency of PIN diodes fabricated with ultra‐thin body and buried oxide (UTBB silicon‐on‐insulator [SOI]) technology, aiming to verify
Fernando O. S. Silva, Rodrigo T. Doria
doaj   +1 more source