Results 81 to 90 of about 75,691 (381)

A Novel p-LDMOS Additionally Conducting Electrons by Control ICs

IEEE Journal of the Electron Devices Society, 2019
A silicon-on-insulator (SOI) p-channel lateral double-diffused MOSFET (p-LDMOS), conducting not only holes but also electrons, is proposed and investigated by TCAD simulations. Its most important advantage is the greatly improved relationship between the
Songnan Guo, Xing Bi Chen
doaj   +1 more source

SOI Technology:An Opportunity for RF Designers?

Journal of Telecommunications and Information Technology, 2023
This last decade silicon-on-insulator (SOI) MOS-FET technology has demonstrated its potentialities for highfrequency (reaching cutoff frequencies close to 500 GHz forn-MOSFETs) and for harsh environments (high temperature,radiation) commercial ...
Jean-Pierre Raskin
doaj   +1 more source

Wearable Haptic Feedback Interfaces for Augmenting Human Touch

Advanced Functional Materials, EarlyView.
The wearable haptic feedback interfaces enhance user experience in gaming, social media, biomedical instrumentation, and robotics by generating tactile sensations. This review discusses and categorizes current haptic feedback interfaces into force, thermal, and electrotactile stimulation‐based haptic feedback interfaces, elucidating their current ...
Shubham Patel, Zhoulyu Rao, Maggie Yang, Cunjiang Yu   +3 more
wiley   +1 more source

Silicon on insulator MESFETs for RF amplifiers [PDF]

Solid-State Electronics, 2010
CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3V CMOS process without any changes to the process flow. A 0.6μm gate length device operates with a cut-off frequency of 7.3GHz and a maximum oscillation frequency of 21GHz.
Seth J. Wilk, J. Ervin, Trevor Thornton, A. Balijepalli, William Lepkowski   +4 more
openaire   +3 more sources

High-Q ring resonators in thin silicon-on-insulator [PDF]

, 2004
We have fabricated high-Q microrings from thin silicon-on-insulater SOI layers and measured Q values of 45 000 in these rings, which were then improved to 57 000 by adding a PMMA cladding.
Baehr-Jones, Tom, Hochberg, Michael, Scherer, Axel, Walker, Chris   +3 more
core   +1 more source

Electroplating of Wear‐ and Corrosion‐Resistant CrCoNi Medium‐Entropy Alloys beyond Hard Chromium Coatings

Advanced Functional Materials, EarlyView.
The electroplating of a CrCoNi medium‐entropy alloy is achieved using a mixture of an ionic liquid and an aqueous solution containing metal salts. The CrCoNi medium‐entropy alloy thin film exhibits high wear and corrosion resistance superior to conventional hard chromium coatings. Abstract High‐entropy alloys (HEAs) and medium‐entropy alloys (MEAs) are
Yuki Murakami, Shuhei Yoshida, Kosuke Ishii, Naoya Nishi, Akiyuki Ryoki, Nobuhiro Tsuji, Kuniaki Murase, Kazuhiro Fukami   +7 more
wiley   +1 more source

Label-Free Biosensing With a Slot-Waveguide-Based Ring Resonator in Silicon on Insulator

IEEE Photonics Journal, 2009
We present a slot-waveguide-based ring resonator in silicon on insulator (SOI) with a footprint of only 13 mum times 10 mum, fabricated with optical lithography.
Tom Claes, Jordi Girones Molera, Katrien De Vos, Etienne Schacht, Roel Baets, Peter Bienstman   +5 more
doaj   +1 more source

Reflectionless grating coupling for silicon-on-insulator integrated circuits [PDF]

, 2011
We propose a novel grating coupler design which is inherently reflectionless by focusing the reflected light away from the entrance waveguide.
Baets, Roel, Bogaerts, Wim, De Koninck, Yannick, Lambert, Emmanuel, Li, Yanlu, Roelkens, Günther, Vermeulen, Diedrik   +6 more
core   +1 more source

Subwavelength index engineered surface grating coupler with sub-decibel efficiency for 220-nm silicon-on-insulator waveguides.

Optics Express, 2015
Surface grating couplers are fundamental components in chip-based photonic devices to couple light between photonic integrated circuits and optical fibers.
D. Benedikovic, P. Cheben, J. Schmid, Danxia Xu, B. Lamontagne, Shurui Wang, J. Lapointe, R. Halir, A. Ortega‐Moñux, S. Janz, M. Dado   +10 more
semanticscholar   +1 more source

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

Advanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo, Mohamad Insan Nugraha, Hendrik Faber, Shaoxian Li, Chrysa Aivalioti, Bahaaeddin Irziqat, Ricardo Ruvalcaba, Temur Maksudov, Yu‐ying Yang, Harold F. MazoMantilla, Lazaros Panagiotidis, Mohamed Nejib Hedhili, Furkan H. Isikgor, Leonidas Tsetseris, Shadi Fatayer, Martin Heeney, Thomas D. Anthopoulos   +16 more
wiley   +1 more source