Results 21 to 30 of about 684,244 (319)
Stimulated terahertz emission due to electronic Raman scattering in silicon [PDF]
Silicon-based semiconductors are intensively investigated over the past years as promising candidates for optoelectronic devices at terahertz (THz) frequencies [1]. Optically pumped intracenter silicon lasers, realized in the past decade in the THz range,
Pavlov, S.G. +38 more
core +2 more sources
Pulsed PECVD for the growth of silicon nanowires [PDF]
Silicon nanowires of high density and high aspect ratio similar to those shown in the literature (Niu et al., 2004, Hofman et al., 2003) have been grown using a variation of plasma enhanced chemical vapour deposition (PECVD) known as pulsed plasma ...
Parlevliet, D. +3 more
core +2 more sources
ICP Etching of Silicon for Micro and Nanoscale Devices [PDF]
The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon.
Henry, Michael David
core +1 more source
Silicon-based photonic integration beyond the telecommunication wavelength range [PDF]
In this paper we discuss silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range. Silicon-on-insulator and germanium-on-silicon passive waveguide circuits are described, as well as the ...
Malik, Aditya +62 more
core +1 more source
A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide [PDF]
The influence of polymorphism on nanometric machinability of single crystal silicon carbide (SiC) has been investigated through molecular dynamics (MD) simulation. The simulation results are compared with silicon as a reference material.
Reuben, Robert L +4 more
core +1 more source
Photoluminescence of Silicon Nanocrystals in Silicon Oxide [PDF]
Recent results on the photoluminescence properties of silicon nanocrystals embedded in silicon oxide are reviewed and discussed. The attention is focused on Si nanocrystals produced by high-temperature annealing of silicon rich oxide layers deposited by plasma-enhanced chemical vapor deposition.
Ferraioli, Luigi +6 more
openaire +4 more sources
Vibration Rectification Error (VRE) is a critical parameter for high-performance accelerometers operating in dynamic environments. This paper presents a focused experimental study to rigorously investigate the relationship between VRE and Scale Factor ...
Theo Miani +6 more
doaj +1 more source
Multiport power conversion topologies provide the capability of multiple independent converters with a single transformer having multiple windings (i.e., ports) potentially increasing power densities and enabling flexible (and bidirectional) power ...
Thomas Langbauer +5 more
doaj +1 more source
Most current thermal MEMS use fragile structures such as thin-film membranes or microcantilevers for thermal isolation. To increase the robustness of these devices, solid thermal insulators that are compatible with MEMS cleanroom processing are needed ...
Ole Behrmann +2 more
doaj +1 more source
With the growing significance of printed sensors on the electronics market, new demands on quality and reproducibility have arisen. While most printing processes on standard substrates (e.g., Polyethylene terephthalate (PET)) are well-defined, the ...
Johanna Zikulnig +3 more
doaj +1 more source

