Results 151 to 160 of about 1,006,667 (349)

Additive manufacturing of silicon carbide for nuclear applications

open access: yesJournal of Nuclear Materials, 2021
T. Koyanagi   +4 more
semanticscholar   +1 more source

A Scalable Method for Cavity‐Enhanced Solid‐State Quantum Sensors

open access: yesAdvanced Science, EarlyView.
Photoluminescent color centres in diamond and hexagon boron nitride are powerful nanoscale solid‐state quantum sensors. Methods for integrating them into macroscopic structures that improve their sensitivity are highly sought after. This study demonstrates a low‐cost and scalable method for the fabrication of quantum sensor‐doped thin‐film cavities ...
Daniel J. Tibben   +5 more
wiley   +1 more source

Effect of Si Addition on Microstructure and Mechanical Properties of SiC Ceramic Fabricated by Direct LPBF with CVI Technology

open access: yesApplied Sciences
In this paper, SiC and Si/SiC ceramics were fabricated using direct laser powder bed fusion with chemical vapor infiltration. Their microstructure, mechanical properties and the impacts of silicon addition were analyzed.
Yipu Wang   +9 more
doaj   +1 more source

Non‐Equilibrium Synthesis Methods to Create Metastable and High‐Entropy Nanomaterials

open access: yesAdvanced Science, EarlyView.
ABSTRACT Stabilizing multiple elements within a single phase enables the creation of advanced materials with exceptional properties arising from their complex composition. However, under equilibrium conditions, the Hume–Rothery rules impose strict limitations on solid‐state miscibility, restricting combinations of elements with mismatched crystal ...
Shuo Liu   +3 more
wiley   +1 more source

Surface chemistry and wear behavior of single-crystal silicon carbide sliding against iron at temperatures to 1500 C in vacuum [PDF]

open access: yes
X-ray photoelectron and Auger electron spectroscopy analyses and morphological studies of wear and metal transfer were conducted with a single-crystal silicon carbide 0001 surface in contact with iron at various temperatures to 1500 C in a vacuum of 10 ...
Buckley, D. H., Miyoshi, K.
core   +1 more source

UV detector monitors organic contamination of optical surfaces [PDF]

open access: yes, 1968
Silicon carbide, insensitive to visible light, is used in photodetectors. System contamination can be monitored during the normal operation without interference to the operator, and without shielding from ambient ...
Glenn, C. G., Kennedy, B. W.
core   +1 more source

A Janus‐Like Bio‐Inspired Strategy for 3D‐Printed Bimetallic Metamaterials with Excellent Thermal‐Protection and Load Bearing Capacity

open access: yesAdvanced Science, EarlyView.
A Janus‐like bio‐inspired strategy is proposed for integrally 3D‐printed bimetallic metamaterials. Inspired by shell bilayers, a heat‐resistant AlSiFeMnNiMg alloy and a SiC‐reinforced AlSi10Mg with different SiC volume fractions are arranged as an architected pair.
Zhicheng Dong   +5 more
wiley   +1 more source

Gibbs free energy of reactions involving SiC, Si3N4, H2, and H2O as a function of temperature and pressure [PDF]

open access: yes
Silicon carbide and silicon nitride are considered for application as structural materials and coating in advanced propulsion systems including nuclear thermal.
Isham, M. A.
core   +1 more source

Environmental Stability and Electronic Properties of Individual Flakes of Ti2CTx MXene

open access: yesAdvanced Electronic Materials, EarlyView.
The paper presents a synthesis of large Ti2CTx MXene flakes with sizes reaching 40 µm and examines their environmental stability and electronic behavior. It demonstrates that monolayer flakes degrade rapidly in ambient conditions, leading to semiconducting‐like behavior with low conductivity and mobility. In contrast, multilayer flakes exhibit enhanced
Md. Ibrahim Kholil   +5 more
wiley   +1 more source

Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC

open access: yesAdvanced Electronic Materials, EarlyView.
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim   +4 more
wiley   +1 more source

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