Results 61 to 70 of about 1,006,667 (349)
Materials Research Express, 2020 Aiming at dense sintering of silicon carbide ceramic, magnesium alloy powder was taken as additive, and silicon carbide powders with two different particle size were sintered by the same hot pressure sintering process.
Jingkun Li +3 more
doaj +1 more source
Self‐Trapped Hole Migration and Defect‐Mediated Thermal Quenching of Luminescence in α‐ and β‐Ga2O3
Advanced Functional Materials, EarlyView.Temperature‐dependent photoluminescence and first‐principles calculations reveal self‐trapped hole migration as the microscopic origin of thermal quenching in α‐ and β‐Ga2O3. The low migration barrier in α‐Ga2O3 enables defect trapping and enhances blue luminescence, while the higher barrier in β‐Ga2O3 preserves ultraviolet emission at elevated ...
Nima Hajizadeh +11 more
wiley +1 more source
Mechanical and tribological behaviour of nano scaled silicon carbide reinforced aluminium composites
Journal of Experimental Nanoscience, 2018 This work assesses the impact of the presence of Nano scaled silicon carbide on the Mechanical & Tribological behavior of aluminium matrix composites. Aluminium matrix composites containing 0, 0.5, 1, 1.5, 2 and 2.5 wt.%-nano scaled silicon carbide was ...
Nadeem Faisal, Kaushik Kumar
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Preliminary study on the performance of biomorphic silicon carbide as substrate for diesel particulate filters [PDF]
, 2018 This paper presents the results of a preliminary experimental study to assess the performance of biomorphic silicon carbide when used for the abatement of soot particles in the exhaust of Diesel engines.
Becerra Villanueva, José Antonio +5 more
core +1 more source
Molecular Cross‐Linking of MXenes: Tunable Interfaces and Chemiresistive Sensing
Advanced Functional Materials, EarlyView.In this study, Ti3C2Tx MXenes are initially functionalized using oleylamine ligands to form stable dispersions in an organic solvent. Subsequently ligand exchange with α,ω‐diaminoalkanes enables cross‐linking, along with precise tuning of interfaces. This structural control translates into tunable charge transport and responsive VOC sensing, showing ...
Yudhajit Bhattacharjee +12 more
wiley +1 more source
Thin film process forms effective electrical contacts on semiconductor crystals [PDF]
, 1967 Process makes microscopic, low-resistance electrical contacts on hexagonal n-type silicon carbide crystals used for microelectronic devices. A vacuum deposition of aluminum is etched to expose the bare silicon carbide where the electrical contacts are ...
Formigoni, N. P., Roberts, J. S.
core +1 more source
Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device. [PDF]
Nano letters (Print), 2019 Color centers with long-lived spins are established platforms for quantum sensing and quantum information applications. Color centers exist in different charge states, each of them with distinct optical and spin properties.
M. Widmann +16 more
semanticscholar +1 more source
Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide [PDF]
, 2020 Silicon Carbide is a promising host material for spin defect based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration.
John B. S. Abraham +13 more
semanticscholar +1 more source
Advanced Functional Materials, EarlyView.The article reviews laser‐processed carbons from various precursors, processing mechanism and their application in advanced batteries. The laser process is chemical free, fast, and scalable, enabling improved battery performance and stability for Li, Na, and Zn battery technologies.
Sujit Deshmukh +2 more
wiley +1 more source
The Effect of Substrate Crystal Orientations on Surface Properties of SiC Thin Layer Grown by MBE
Journal of Advanced Mechanical Design, Systems, and Manufacturing, 2008 Silicon carbide is expected to be used as a next-generation material because of its more effective mechanical and electronic properties. The hetero Molecular Beam Epitaxy process may provide a method to form thin layered mono-crystal Silicon carbide on a
Akira KAKUTA +2 more
doaj +1 more source