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2010
Silicon dioxide is the most commonly used insulator material in IC technology and in the other fields of silicon device fabrication technology. This chapter explains the various aspects of the growth and deposition of silicon dioxides. It also shows with example the utilization of different kinds of silicon dioxides for various purposes in the ...
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Silicon dioxide is the most commonly used insulator material in IC technology and in the other fields of silicon device fabrication technology. This chapter explains the various aspects of the growth and deposition of silicon dioxides. It also shows with example the utilization of different kinds of silicon dioxides for various purposes in the ...
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Anodic nitridation of silicon and silicon dioxide
IEEE Transactions on Electron Devices, 1985Anodic nitridation of Si wafers and SiO 2 films in an ammonia plasma was investigated. Compositions of the anodic nitride and the anodic nitrided-oxide films were analyzed with Auger electron spectroscopy and Rutherford backscattering techniques. The etching and oxidation behavior as well as the interfacial, electrical conduction, and charge trapping ...
S.S. Wong, W.G. Oldham
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The silicon-silicon dioxide system
Proceedings of the IEEE, 1969Study of the silicon-silicon dioxide system as a junction between a nearly ideal semiconductor and insulator has aroused both scientific and technological interest. Surface phenomena associated with this system are influenced by contamination and imperfections in the oxide, impurity redistribution in the silicon near the oxide, and finally by ...
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Silicon and Silicon Dioxide Thermal Bonding
MRS Proceedings, 1987AbstractThe quality of the bond produced after mating oxidized and/or unoxidized silicon wafers has been studied using acoustic microscopy, infrared transmission thermographs, and transmission electron microscopy. The acoustic microscopy revealed that a significant number of unbonded regions (gaps) remain at the bond interface after bonding in oxygen ...
Robert D. Black +5 more
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Photoemission of electrons from silicon into silicon dioxide
IEEE Transactions on Electron Devices, 1965Electron transport in thermally grown layers of Si${\mathrm{O}}_{2}$ has been studied. Electrons are introduce into the oxide by photoemission from the adjoining silicon crystal. Specimens consist of a silicon crystal covered with an Si${\mathrm{O}}_{2}$ layer about 2 microns thick and, over this, a semitransparent gold electrode.
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Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films
Journal of Applied Physics, 1985Electron heating in silicon dioxide (SiO2) at electric fields ≲5 MV/cm is demonstrated using three different experimental techniques: carrier separation, electroluminescence, and vacuum emission. Gradual heating of the electronic carrier distribution is demonstrated for fields from 5 to 12 MV/cm with the average excess energy of the distribution ...
D. J. DiMaria +5 more
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Journal of Applied Physics, 1985
Using the switching characteristic of a metal-tunnel oxide-semiconductor thyristor, a new method is developed to determine the tunneling transmission coefficient through a thin oxide layer and the aluminum-silicon dioxide and silicon-silicon dioxide potential barrier heights in the metal-tunnel insulator-silicon system. The effects of the surface state
A. K. Duong, A. G. Nassibian
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Using the switching characteristic of a metal-tunnel oxide-semiconductor thyristor, a new method is developed to determine the tunneling transmission coefficient through a thin oxide layer and the aluminum-silicon dioxide and silicon-silicon dioxide potential barrier heights in the metal-tunnel insulator-silicon system. The effects of the surface state
A. K. Duong, A. G. Nassibian
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Instability in Amorphous Silicon Dioxide/Amorphous Silicon Structures
MRS Proceedings, 1992ABSTRACTAmorphous insulator/amorphous silicon structures show, under bias-stress conditions, a drift of the electrical characteristics. In the present work, in order to discriminate the main source of instability in amorphous silicon dioxide/amorphous silicon Thin-Film Transistors, the determination of both threshold voltage and flat-band voltage has ...
G Fortunato, L Mariucci
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Electrochemical Phenomena in Thin Films of Silicon Dioxide on Silicon
IBM Journal of Research and Development, 1964A study has been made of the effect of chemical additives and of annealing and electrical biasing procedures upon the state of charge of silica films grown on silicon. A model, proposed to account for the observations, is based on the assumption that phosphorus, aluminum, and boron, when present, substitute for Si in SiO2.
Donald P. Seraphim +3 more
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Silicon Nitride-Silicon Dioxide Combinations
1971While it would be desirable to replace completely SiO2 by Si3N4, such structures exhibit hysteresis in surface behavior and charge instability due to the high number of surface charges, tunneling and trapping at the Si-Si3N4 interface as noted in the previous sections of this survey.
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