Results 211 to 220 of about 45,706 (265)
Electrospun Silicon Dioxide/poly(vinylidene fluoride) Nanofibrous Membrane Comprising a Skin Multicore-Shell Nanostructure as a New High-Heat-Resistant Separator for Lithium-Ion Polymer Batteries. [PDF]
Polymers (Basel)Kim YG +5 more
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Plain Language Summary of the re-evaluation of silicon dioxide (E 551) as a food additive in foods for infants below 16 weeks of age and follow-up of its re-evaluation as a food additive for uses in foods for all population groups. [PDF]
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Toxicology and Industrial Health, 2004
This study compares the effect of nanosized silicon dioxide (nanosized SiO2) and microsized silicon dioxide (microsized SiO2) particles on fibrogenesis in rats. Wistar rats were instilled intratracheally with saline, 20 mg of nanosized SiO2 or 20 mg of microsized SiO2, and were sacrificed at 1 and 2 months after instillation.
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This study compares the effect of nanosized silicon dioxide (nanosized SiO2) and microsized silicon dioxide (microsized SiO2) particles on fibrogenesis in rats. Wistar rats were instilled intratracheally with saline, 20 mg of nanosized SiO2 or 20 mg of microsized SiO2, and were sacrificed at 1 and 2 months after instillation.
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Crystalline anodic silicon dioxide on silicon
Physica Status Solidi (a), 1978Multi-layer oxide film grows in anodic oxidation of silicon p-type in 0.1 N water diluted hydrofluoric acid. The inner layer of the oxide film on the silicon monocrystal substrate is of α-quartz, while the outer layer of the oxide film to the electrolyte interface is amorphous.
A. A. Konova, M. G. Michailov
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Applied Surface Science, 1997
Abstract The effect of annealing on silicon doped SiO 2 films was studied by X-ray diffraction, electron spin resonance (ESR) and Fourier transform photoluminescence (FTPL, 30 to 300 K). FTPL was not observed from as-deposited samples but annealed samples showed FTPL at room temperature centred at about 900 nm and also an anomalous variation of the ...
A. Sandhu +7 more
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Abstract The effect of annealing on silicon doped SiO 2 films was studied by X-ray diffraction, electron spin resonance (ESR) and Fourier transform photoluminescence (FTPL, 30 to 300 K). FTPL was not observed from as-deposited samples but annealed samples showed FTPL at room temperature centred at about 900 nm and also an anomalous variation of the ...
A. Sandhu +7 more
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Anodic nitridation of silicon and silicon dioxide
IEEE Transactions on Electron Devices, 1985Anodic nitridation of Si wafers and SiO 2 films in an ammonia plasma was investigated. Compositions of the anodic nitride and the anodic nitrided-oxide films were analyzed with Auger electron spectroscopy and Rutherford backscattering techniques. The etching and oxidation behavior as well as the interfacial, electrical conduction, and charge trapping ...
S.S. Wong, W.G. Oldham
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Silicon and Silicon Dioxide Thermal Bonding
MRS Proceedings, 1987AbstractThe quality of the bond produced after mating oxidized and/or unoxidized silicon wafers has been studied using acoustic microscopy, infrared transmission thermographs, and transmission electron microscopy. The acoustic microscopy revealed that a significant number of unbonded regions (gaps) remain at the bond interface after bonding in oxygen ...
Robert D. Black +5 more
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Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films
Journal of Applied Physics, 1985Electron heating in silicon dioxide (SiO2) at electric fields ≲5 MV/cm is demonstrated using three different experimental techniques: carrier separation, electroluminescence, and vacuum emission. Gradual heating of the electronic carrier distribution is demonstrated for fields from 5 to 12 MV/cm with the average excess energy of the distribution ...
D. J. DiMaria +5 more
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2010
Silicon dioxide is the most commonly used insulator material in IC technology and in the other fields of silicon device fabrication technology. This chapter explains the various aspects of the growth and deposition of silicon dioxides. It also shows with example the utilization of different kinds of silicon dioxides for various purposes in the ...
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Silicon dioxide is the most commonly used insulator material in IC technology and in the other fields of silicon device fabrication technology. This chapter explains the various aspects of the growth and deposition of silicon dioxides. It also shows with example the utilization of different kinds of silicon dioxides for various purposes in the ...
openaire +3 more sources