Results 231 to 240 of about 45,706 (265)
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Silicon Nitride-Silicon Dioxide Combinations
1971While it would be desirable to replace completely SiO2 by Si3N4, such structures exhibit hysteresis in surface behavior and charge instability due to the high number of surface charges, tunneling and trapping at the Si-Si3N4 interface as noted in the previous sections of this survey.
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Hydrogen implantation and diffusion in silicon and silicon dioxide
Applied Physics A: Materials Science & Processing, 1995Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe
D. Fink +7 more
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Silicon carbonate formed from carbon dioxide and silicon dioxide
2012The discovery of nonmolecular carbon dioxide under high-pressure conditions shows that there are remarkable analogies between this important substance and other group IV oxides. A natural and long-standing question is whether compounds between CO2 and SiO2 are possible.
M Santoro +5 more
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IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2003
An enhancement in the convolution efficiency is obtained by annihilating the SiO2-Si interface trap charges in the metal-ZnO-Si3N4-SiO2-Si convolver structure. The annealing process uses a source of hydrogen created underneath the SiO2-Si interface by implanting H3(+) ion followed by rapid thermal anneal of 5s at 900 degrees C.
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An enhancement in the convolution efficiency is obtained by annihilating the SiO2-Si interface trap charges in the metal-ZnO-Si3N4-SiO2-Si convolver structure. The annealing process uses a source of hydrogen created underneath the SiO2-Si interface by implanting H3(+) ion followed by rapid thermal anneal of 5s at 900 degrees C.
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1993
Abstract Vitreous silicon dioxide has a very wide gap of the order of 9 eV and is consequently an excellent insulator. It is important for many reasons; it is the raw material of the communications technology of fibre optics, and in such devices as the MOSFET (metal oxide silicon field effect transistor) layers of vitreous silica are ...
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Abstract Vitreous silicon dioxide has a very wide gap of the order of 9 eV and is consequently an excellent insulator. It is important for many reasons; it is the raw material of the communications technology of fibre optics, and in such devices as the MOSFET (metal oxide silicon field effect transistor) layers of vitreous silica are ...
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1984
Crystalline silicon dioxide has been associated with pulmonary lung disease. A number of descriptive terms such as “amorphous silica,” “free silica,” “silica flour,” and “fumed silica” have arisen in the literature as a result of studies related to health and the silicon dioxide forms.
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Crystalline silicon dioxide has been associated with pulmonary lung disease. A number of descriptive terms such as “amorphous silica,” “free silica,” “silica flour,” and “fumed silica” have arisen in the literature as a result of studies related to health and the silicon dioxide forms.
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Electron Hall Effect in Silicon Dioxide
Physical Review, 1967Summary form only given, as follows. A new three-electrode Hall-effect geometry has been used to determine an approximate mobility value for electrons photoemitted into the conduction band of thermally grown layers of silicon dioxide. The oxide layers were grown in an air-steam atmosphere at 1100-1150°C and were from 3.5-6.6μ thick.
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Unified Simulation of Diffusion in Silicon and Silicon Dioxide
Defect and Diffusion Forum, 2005We present a unified simulation of diffusion in silicon (Si) and silicon dioxide (SiO2) that is based on the diffusing dopant species and point defects that primarily contribute to the diffusion. We first present the simulation of phosphorus (P) diffusion in Si based on the integrated diffusion model that we have developed and elucidate the mechanism ...
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