Results 221 to 230 of about 45,706 (265)
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The silicon-silicon dioxide system
Proceedings of the IEEE, 1969Study of the silicon-silicon dioxide system as a junction between a nearly ideal semiconductor and insulator has aroused both scientific and technological interest. Surface phenomena associated with this system are influenced by contamination and imperfections in the oxide, impurity redistribution in the silicon near the oxide, and finally by ...
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Photoemission of electrons from silicon into silicon dioxide
IEEE Transactions on Electron Devices, 1965Electron transport in thermally grown layers of Si${\mathrm{O}}_{2}$ has been studied. Electrons are introduce into the oxide by photoemission from the adjoining silicon crystal. Specimens consist of a silicon crystal covered with an Si${\mathrm{O}}_{2}$ layer about 2 microns thick and, over this, a semitransparent gold electrode.
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Instability in Amorphous Silicon Dioxide/Amorphous Silicon Structures
MRS Proceedings, 1992ABSTRACTAmorphous insulator/amorphous silicon structures show, under bias-stress conditions, a drift of the electrical characteristics. In the present work, in order to discriminate the main source of instability in amorphous silicon dioxide/amorphous silicon Thin-Film Transistors, the determination of both threshold voltage and flat-band voltage has ...
G Fortunato, L Mariucci
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Journal of Applied Physics, 1985
Using the switching characteristic of a metal-tunnel oxide-semiconductor thyristor, a new method is developed to determine the tunneling transmission coefficient through a thin oxide layer and the aluminum-silicon dioxide and silicon-silicon dioxide potential barrier heights in the metal-tunnel insulator-silicon system. The effects of the surface state
A. K. Duong, A. G. Nassibian
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Using the switching characteristic of a metal-tunnel oxide-semiconductor thyristor, a new method is developed to determine the tunneling transmission coefficient through a thin oxide layer and the aluminum-silicon dioxide and silicon-silicon dioxide potential barrier heights in the metal-tunnel insulator-silicon system. The effects of the surface state
A. K. Duong, A. G. Nassibian
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IEEE Transactions on Electron Devices, 1987
A novel permeable-base device that is a type of solid-state analog to the vacuum tube has been-constructed using stacked layers of silicon, silicon dioxide, and silicon-rich silicon dioxide. The base or grid, which is formed from thin patterned polycrystalline silicon with degenerate doping, is separated from a single-crystal silicon substrate that ...
D.J. DiMaria, M. Arienzo
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A novel permeable-base device that is a type of solid-state analog to the vacuum tube has been-constructed using stacked layers of silicon, silicon dioxide, and silicon-rich silicon dioxide. The base or grid, which is formed from thin patterned polycrystalline silicon with degenerate doping, is separated from a single-crystal silicon substrate that ...
D.J. DiMaria, M. Arienzo
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Materials Science Forum, 2007
The gamma-ray irradiation causes positive charge traps formation in silicon dioxide films and at silicon dioxide - silicon interface of MOS devices, and the threshold voltage shift in MOS transistors. Here, the Monte Carlo model was used to develop an approach for estimating gammaray induced traps spatially distributed in silicon dioxide films. This is
M. Odalović, D. Petković
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The gamma-ray irradiation causes positive charge traps formation in silicon dioxide films and at silicon dioxide - silicon interface of MOS devices, and the threshold voltage shift in MOS transistors. Here, the Monte Carlo model was used to develop an approach for estimating gammaray induced traps spatially distributed in silicon dioxide films. This is
M. Odalović, D. Petković
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Electrochemical Phenomena in Thin Films of Silicon Dioxide on Silicon
IBM Journal of Research and Development, 1964A study has been made of the effect of chemical additives and of annealing and electrical biasing procedures upon the state of charge of silica films grown on silicon. A model, proposed to account for the observations, is based on the assumption that phosphorus, aluminum, and boron, when present, substitute for Si in SiO2.
Donald P. Seraphim +3 more
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IEEE Spectrum, 2007
The planar process also made it easy to interconnect neighboring transistors on a wafer, paving the way to another Fairchild achievement: the first commercial integrated circuits. As other companies realized the great advantages of planar technology and began adopting it on their own production lines, Hoerni's elegant idea helped to establish Silicon ...
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The planar process also made it easy to interconnect neighboring transistors on a wafer, paving the way to another Fairchild achievement: the first commercial integrated circuits. As other companies realized the great advantages of planar technology and began adopting it on their own production lines, Hoerni's elegant idea helped to establish Silicon ...
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Simulation of the structure of amorphous silicon dioxide
Physical Review B, 1988Computer models of amorphous silicon dioxide have been generated by systematic procedures. The models are all stoichiometric, perfectly coordinated and periodic, and composed of SiO/sub 4/ tetrahedra sharing corners to form a random network. Starting from various random arrangements, each example is subjected to a series of modifications of its ...
, Guttman, , Rahman
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Statistical Modeling of Silicon Dioxide Reliability
26th International Reliability Physics Symposium, 1988A technique is presented for predicting lifetime of an oxide to different voltages, different oxide areas and different temperatures. Using the defect density model in which defects are modelled as effective oxide thinning, many reliability parameters such as yield, failure rate, and screen time/screen yield can be predicted. Effects of oxide thickness,
J. Lee, I.-C. Chen, C. Hu
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